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The observation of spinon excitations in the $$S=\frac{1}{2}$$ S = 1 2 triangular antiferromagnet Ca3ReO5Cl2 reveals a quasi-one-dimensional (1D) nature of magnetic correlations, in spite of the nominally 2D magnetic structure. This phenomenon is known as frustration-induced dimensional reduction. Here, we present high-field electron spin resonance spectroscopy and magnetization studies of Ca3ReO5Cl2, allowing us not only to refine spin-Hamiltonian parameters, but also to investigate peculiarities of its low-energy spin dynamics. We argue that the presence of the uniform Dzyaloshinskii-Moriya interaction (DMI) shifts the spinon continuum in momentum space and, as a result, opens a zero-field gap at the Γ point. We observed this gap directly. The shift is found to be consistent with the structural modulation in the ordered state, suggesting this material as a perfect model triangular-lattice system, where a pure DMI-spiral ground state can be realized.

Antimicrobials should be used appropriately to minimise the risk of resistant strains arising in association with overuse. De-escalation of antimicrobial therapy is one strategy used to ensure appropriate use, but its safety and efficacy in burn patients are unclear. The aim of this study was to evaluate the safety and efficacy of de-escalation therapy for treating infections in burn patients. This retrospective cohort study investigated patients admitted to our intensive care unit with burns and treated for infection between October 1, 2013, and September 30, 2020. Patients were classified into a de-escalation group (Group D) comprising patients treated with empiric antimicrobial therapy followed by de-escalation and a non-de-escalation group (Group ND) comprising patients who did not undergo de-escalation. Characteristics and outcomes were compared between groups. Forty-three patients met the inclusion criteria, including 15 patients in Group D and 28 patients in Group ND. Bacterial species commonly detected in these patients were

The observation of spinon excitations in the [Formula: see text] triangular antiferromagnet Ca

We investigated the low-temperature and high-field thermodynamic and ultrasonic properties of SrCu_{2}(BO_{3})_{2}, which exhibits various plateaux in its magnetization curve above 27 T, called a magnetic Devil's staircase. The results of the present study confirm that magnetic crystallization, the first step of the staircase, occurs above 27 T as a first-order transition accompanied by a sharp singularity in heat capacity C_{p} and a kink in the elastic constant. In addition, we observe a thermodynamic anomaly at lower fields around 26 T, which has not been previously detected by any magnetic probes. At low temperatures, this magnetically hidden state has a large entropy and does not exhibit Schottky-type gapped behavior, which suggests the existence of low-energy collective excitations. Based on our observations and theoretical predictions, we propose that magnetic quadrupoles form a spin-nematic state around 26 T as a hidden state on the ground floor of the magnetic Devil's staircase.

We studied the acoustic properties of liquid oxygen up to 90 T by means of ultrasound measurements. We observed a monotonic decrease of the sound velocity and an asymptotic increase of the sound attenuation when applying magnetic fields. The unusual attenuation, twenty times as large as the zero-field value, suggests strong fluctuations of the local molecular arrangement. We point out that the observed fluctuations are related to a liquid-liquid transition or crossover, from a small-magnetization to a large-magnetization liquid, which is characterized by a local-structure rearrangement. To investigate higher-field properties of liquid oxygen, we performed single-turn-coil experiments up to 180 T by means of the acoustic, dilatometric, magnetic, and optical techniques. We observed only monotonic changes of these properties, reflecting the absence of the proposed liquid-liquid transition in our experimental conditions., Comment: 10 pages, 10 figures. arXiv admin note: text overlap with arXiv:1906.01207

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We investigate the low-temperature magnetic properties of the molecule-based chiral spin chain [Cu(pym)(H_{2}O)_{4}]SiF_{6}·H_{2}O (pym=pyrimidine). Electron-spin resonance, magnetometry and heat capacity measurements reveal the presence of staggered g tensors, a rich low-temperature excitation spectrum, a staggered susceptibility, and a spin gap that opens on the application of a magnetic field. These phenomena are reminiscent of those previously observed in nonchiral staggered chains, which are explicable within the sine-Gordon quantum-field theory. In the present case, however, although the sine-Gordon model accounts well for the form of the temperature dependence of the heat capacity, the size of the gap and its measured linear field dependence do not fit with the sine-Gordon theory as it stands. We propose that the differences arise due to additional terms in the Hamiltonian resulting from the chiral structure of [Cu(pym)(H_{2}O)_{4}]SiF_{6}·H_{2}O, particularly a uniform Dzyaloshinskii-Moriya coupling and a fourfold periodic staggered field.

We investigated the effects of argon and hydrogen plasmas on the structure and electrical properties of the surface of silicon wafers. Surface roughness and defect density were measured by atomic force microscopy and photothermal deflection spectroscopy, respectively. The electronic properties of the silicon surfaces were evaluated by forming a Schottky contact on the plasma-treated surfaces. A significant surface roughness was observed on hydrogen-plasma-treated surfaces whereas the roughness on argon-plasma-treated samples was much smaller. Whereas the surface defect density was larger after argon plasma than after hydrogen-plasma treatment. Submitting an argon-plasma-treated surface to a subsequent hydrogen plasma reduced the density of defects created by the first treatment. The ideality factors of the Schottky barrier diodes were qualitatively consistent with the surface defect density. The hydrogen plasma reacts with the silicon surface and introduces surface roughness by breaking Si–Si bonds. The hydrogen atoms bond to the surface defects and consequently reduce the defect density. In contrast, the argon plasma sputters the silicon surface uniformly and hence creates defects.

The present study deals with the failure load analysis of rigid frames by the kinematically admissible approach, with emphasis on a combinatorial searching problem closely correlated to AI technology. In general, the essence of AI technology is to establish efficient search techniques for the prescribed goal among enormous data bases or knowledge-bases, which are frequently generated from combination of elements, as encountered in the traveling salesman problem. Because of non-differentiability or discreteness, the search of such a combination for the goal requires a large number of generate-and-test procedures, which wastes enormous computer time. Failure modes which are kinematically admissible to collapsed frames can be categorized into two types of mode: elementary failure modes and their linearly combined modes. By and large, for even medium-sized rigid frames the number of combined modes becomes explosively large. Thus, it is important to establish an effective search technique for the minimum load factor by virtual work equations for elementary modes and enormous combined modes without exploitation of any kind of continuity condition such as differentiation. Some efficient bounding operations to prune futile alternatives is applied as an example frame, whose result shows excellent searching efficiency.

We have developed a smart pixel that monolithically integrates a metal-semiconductor-metal (MSM) photodetector, metal-semiconductor field effect transistors (MESFET's), and a vertical-cavity surface-emitting laser (VCSEL). This device can perform both NOR- and OR-types of operation with a thresholding function. Optimal device parameters are obtained by using a SPICE simulation. Calculations show that the switching time is mainly limited by the CR time constant of the input stage, which consists of the MSM photodetector, the load-resistor, and the MESFET connected to the MSM photodetector. The fabricated device attained a contrast ratio of more than 30 dB with optical gain. The 3-dB bandwidth was 220 MHz and the switching energy was 700 fJ at an operation frequency of 100 MHz. We also discuss the power consumption and the packing density of the smart pixel including the VCSEL as a function of operation frequency. A MESFET that has high f/sub T/ with low bias voltage and a VCSEL that has a low threshold current while maintaining the wall-plug efficiency are necessary to obtain a higher performance device.

The effect of carboxamidemethylated Fc fragment (CM-Fc) from human serum immunoglobulin G on mixed lymphocyte reaction (MLR) was studied. CM-Fc enhanced the MLR response when added at the start of cultivation, but suppressed the response when added 48 h after onset of cultivation. The Fc fragment had no effect. CM-Fc elevated the levels of interleukin-1 and tumor necrosis factor when added at the start of splenocyte cultivation, and somewhat did so when added 48 h after onset of cultivation. These elevations caused the induction of prostaglandin E2 in MLR culture supernatant. The suppression of MLR by CM-Fc was abrogated by the addition of indomethacin. We considered that CM-Fc regulated the immune response being affected to the function of macrophages.

Several quantum paramagnets exhibit magnetic-field-induced quantum phase transitions to an antiferromagnetic state that exists for H c1 ≤ H ≤ H c2. For some of these compounds, there is a significant asymmetry between the low- and high-field transitions. We present specific heat and thermal conductivity measurements in NiCl2-4SC(NH2)2, together with calculations which show that the asymmetry is caused by a strong mass renormalization due to quantum fluctuations for H ≤ H c1 that are absent for H ≥ H c2. We argue that the enigmatic lack of asymmetry in thermal conductivity is due to a concomitant renormalization of the impurity scattering.

SummaryA general-purpose low turbulence wind tunnel was constructed using the design method of Bradshaw. Sound absorbent material was used in every four corners to decrease sound intensity produced by a fan. The longitudinal component of turbulence intensity at the centre of the closed working section is less than 0.02% of the mean velocity in the speed range between 18 m/s arid 53 m/s. The mean velocity variations across the working section are within ±0.1% of the mean velocity.Performance measurements have been done at representative tunnel cross sections to clarify the behaviour of flow in the tunnel. This work differs from previous studies in the sense that emphasis is placed not only on velocity distributions, but also on turbulence intensity distributions at several cross sections of the tunnel.The critical Reynolds number for a flat plate at zero incidence, Rec = 3.5 x 106, measured in a stream of the very low turbulence intensity of 0.016%, is larger than that reported by Schubauer and Skramstad.

Single crystals of the spin dimer system Sr(3)Cr(2)O(8) have been grown for the first time. Magnetization, heat capacity, and magnetocaloric effect data up to 65 T reveal magnetic order between applied fields of H(c1) approximately 30.4 T and H(c2) approximately 62 T. This field-induced order persists up to T(c)(max) approximately 8 K at H approximately 44 T, the highest observed in any quantum magnet where H(c2) is experimentally accessible. We fit the temperature-field phase diagram boundary close to H(c1) using the expression T(c) = A(H-H(c1))(nu). The exponent nu = 0.65(2), obtained at temperatures much smaller than T(c)(max), is that of the 3D Bose-Einstein condensate (BEC) universality class. This finding strongly suggests that Sr(3)Cr(2)O(8) is a new realization of a triplon BEC where the universal regimes corresponding to both H(c1) and H(c2) are accessible at (4)He temperatures.

Ba_{3}Mn_{2}O_{8} is a spin-dimer compound based on pairs of S = 1, 3d;{2}, Mn;{5+} ions arranged on a triangular lattice. Antiferromagnetic intradimer exchange leads to a singlet ground state in zero field, with excited triplet and quintuplet states at higher energy. High field thermodynamic measurements are used to establish the phase diagram, revealing a substantial asymmetry of the quintuplet condensate. This striking effect, all but absent for the triplet condensate, is due to a fundamental asymmetry in quantum fluctuations of the paramagnetic phases near the various critical fields.

We present resistivity measurements of the complete superconducting upper critical field (H{c2}) phase diagram as a function of angle (theta) and temperature (T) for cobalt-doped SrFe2As2 epitaxial films to 0.5 K and 50 T. Although H{c2}(theta) at 10 K is indistinguishable from that derived from a single-band anisotropy model, the apparent anisotropy H{c2}{ perpendicularc}/H{c2};{ parallelc} linearly decreases to 1 at low T, with H{c2}(0)=47 T. The data are well described by a two-band model with small, opposing anisotropies for the bands. This unusual relationship is confirmed by the observation of a local maximum for H{c2};{ parallelc} at low T.

We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser. This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain. The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency. >

InGaAs quantum-well vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by metalorganic chemical vapor deposition (MOCVD) have have been characterized. Series resistance in p-type Al/sub x/Ga/sub 1-x/As/GaAs mirrors decreases drastically as the Al content in Al/sub x/Ga/sub 1-x/As decreases from AlAs. Air-post devices with a p-type Al/sub 0.06/Ga/sub 0.4/As/GaAs top mirror exhibit a room temperature CW threshold current of 1.8 mA at an operating voltage of 2.0 V (with a threshold power consumption at 3.6 mW). >

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 mu m is reported. A double heterostructure with a 34-pair GaInAsP ( lambda /sub g/=1.4 mu m)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40- mu m phi device with a 0.88- mu m-thick active layer. Threshold current density is as low as 21 kA/cm/sup 2/ at room temperature. >

In the present investigation, nature of boundary layer transition, where Gortler instability is dominant, is studied experimentally in details. Namely, effects of the longitudinal pressure gradients on the secondary instability are considered. Also, instability growth and breakdown to full turbulent state are measured using hot wire anemometer and smoke flow visualisations. Results show that the type of the secondary instability is closely dependent to the longitudinal pressure gradients imposed. In an adverse pressure gradient, the secondary boundary layer appears as horseshoe mode. However, in a favourable pressure gradient, the secondary instability becomes sinuous mode.

26,26,26,27,27,27-Hexafluoro-1,25-dihydroxyvitamin D3 (ST-630) is a newly developed agent to maintain the levels of calcium and phosphorus in blood. Herein, we investigated the effect of this compound on the expression of vitamin-D-responsive genes in vitamin-D-deficient mice. ST-630 was more effective than 1, 25-dihydroxyvitamin D3 [1,25(OH)2D3] with respect to the induction of Cyp24 and calbindin-D9k mRNAs in the kidney and in the small intestine. Moreover, the increase in mRNA levels of vitamin-D-responsive genes induced by ST-630 lasted longer than that induced by 1,25(OH)2D3. These results indicate that ST-630 was more effective in inducing Cyp24 and calbindin-D9k gene expression than 1, 25(OH)2D3 when both compounds were injected into vitamin-D-deficient mice.

The effect of carboxamidemethylated Fc fragment (CM-Fc) from human immunoglobulin G (IgG) on type II collagen (C II)-induced arthritis (CIA) in DBA/1J mice was studied. CM-Fc suppressed the development of CIA while Fc fragment did not. CM-Fc inhibited the increase in serum anti-C II IgG. CM-Fc suppressed C II-induced delayed type hypersensitivity (DTH) in DBA/1J mice. Moreover, the C II-induced proliferation of splenocytes from mice immunized with C II was suppressed by the administration of CM-Fc. Following an analysis of the lymphocyte population, a decreased percentage of B220+ cells and ratio of L3T4+/Ly-2+ cells was observed in lymph nodes of CM-Fc administered mice as compared with those of control group. These results suggest that CM-Fc inhibits CIA by regulating lymphocyte function.

A highly specific antiserum against rat liver metallothionein (MT) was raised in a Japanese white rabbit. Using this anti-MT antiserum, we found that MT was localized in the nuclei as well as in the cytoplasm of hepatocytes in newborn rats. Since it is known that these cells are growing actively, we suspected that there was a relationship between the localization of MT in cell nuclei and the cell proliferation. Therefore, the induction and subcellular localization of MT were examined in rat liver remaining after 70% removal. MT was induced in the remnant liver rapidly after the hepatectomy, its concentration being about 80-fold higher than that of the intact liver. Flow cytometric analysis revealed that MT was translocated into the nuclei from the cytoplasm of hepatocytes during liver regeneration after partial hepatectomy. The highest MT level in the nuclei was observed 24 h after hepatectomy. MT-stained positive nuclei were in S to G2M phases of the cell cycle of regenerating hepatocytes, and the nuclei in G1 phase were not stained with anti-MT antiserum. The increase in hepatic MT levels did not directly cause MT translocation into the nuclei. These results suggested that MT was a cell cycle-dependent, nuclear protein.

Recent improvement of MRI has enabled us to clearly visualize intramedullary spinal lesions which previously could not be recognized by CT scan or myelography. We reported a case of hematomyelia caused by intramedullary cavernous hemangioma. In this case, MRI was very useful in efforts to recognize the lesions. With the use of MRI, we will be able to accurately ascertain the location and characteristics of intramedullary spinal lesions. The number of surgically treated cases of idiopathic hematomyelia will increase in the future.

The more potent inhibitory activity against angiotensin-converting enzyme (ACE) was excised from a glyceraldehyde-3-phosphate dehydrogenase (GAPDH) preparation of Bacillus stearothermophilus by heating at 120 degrees C in 1 M AcOH-20 mM HCl, as compared with GAPDH preparations of yeast and pig. Sufficient excision of B. stearothermophilus ACE inhibitors required a longer proteolysis time of 60 min. Two inhibitors were then purified by gel-permeation and reverse-phase chromatographies. One of the B. stearothermophilus ACE inhibitors BG-1, was the GAPDH peptide 68-77 (Gly-Lys-Glu-Ile-Ile-Val-Lys-Ala-Glu-Arg, IC50: 32 microM). Another inhibitor, BG-2 (Gly-Lys-Met-Val-Lys-Val-Val-Ser-Trp-Tyr, IC50: 6 microM), correspond to GAPDH peptide 304-313. These sequences were quite different from those of vertebrate GAPDH peptides and the venom peptide family with ACE inhibitory activity. BG-2 was found to be a non-competitive type inhibitor, differing from many natural peptide inhibitors. Thus, B. stearothermophilus GAPDH seemed to be a good source of new type ACE inhibitors, in addition to the advantages due to its thermophilic property.

This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}.

The first case was a 63-year-old man with edema in the lower extremities, and the second case was a 78-year-old man complaining of general fatigue and loss of appetite. Both cases had bilateral hydronephrosis and renal failure due to ureteric obstruction. Both patients with histologically proven idiopathic retroperitoneal fibrosis were studied by magnetic resonance imaging (MRI). MRI was performed using a superconducting magnet operating at 0.5 tesla and spin echo images were obtained. The retroperitoneal fibrous plaque appeared at an intermediate intensity on T1 weighted image and at a high intensity on T2 weighted image. They underwent intraperitoneal ureteral transposition and postoperative administration of prednisolone. Although their renal functions and hydronephrosis improved after the treatments, the fibrous plaque was still observed on MRI. It was considered that MRI was an excellent method of choice in the diagnosis and follow-up of retroperitoneal fibrosis.

The authors present a study of the thermal interference in a two-dimensional 0.85 µm vertical-cavity surface-emitting laser array. The distance between pixels is 250 µm. The temperature of the centre pixel is found to increase by at least 15°C due to thermal interference when the other pixels are operated near the threshold current.

The first 0.85 µm 8×8 bottom-emitting vertical-cavity surface-emitting laser diodes (VCSELs) have been grown on AlGaAs substrates. Their characteristics are the same as those of VCSELs grown on GaAs substrate. The authors have also fabricated 8×8 independently addressable VCSEL arrays which exhibited good lasing characteristics and uniform threshold current density.

Summary form only given. Room-temperature operation of a current-injection near-1.55- mu m GaInAsP/InP vertical-cavity surface emitting laser diode (VCSELD) was achieved. The double heterostructure was grown by metal-organic chemical vapor deposition on a

GaAs and GaP are grown on Si substrates by MOCVD. GaP is directly grown on Si, and GaAs is grown with the intermediate layers of GaP, GaP/GaAsP strained layer superlattice (SLS) and GaAsP/GaAs SLS. GaP and GaAs are characterized by double crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The characteristics of GaP on Si with changing the thickness and those of GaAs grown on Si with changing the intermediate layer thickness are investigated. The thermal cycle growth is employed for GaAs on Si to reduce the dislocation density.

During our studies on the active moiety of parotin, we succeeded in purifying MP-parotin (MW = 130000) and parotin-subunit (MW = 45000) from crude parotin. Furthermore, AA-1 (MW = 9100) was isolated after the tryptic cleavage of the parotin-subunit. AA-1 was the smallest unit ever obtained which had serum Ca-decreasing activity and circulating leucocyte-increasing activity together with the nature of specific localization in bone. Therefore, AA-1 was considered to contain the essential residues for parotin activity in its structure. Since crude parotin was also known to show andromimetic action, these parotin components reduced in size were assayed in this regard. A daily injection of MP-parotin (500 micrograms/kg), parotin-subunit (20 micrograms/kg) or AA-1 (20 micrograms/kg) was administered subcutaneously for two weeks to male rats weighing 200 approximately 220 g. The dynamics of the testicular biosynthesis of testosterone from 3H-pregnenolone and 14C-progesterone via delta 4, delta 5-pathway and the transition of delta 5 to delta 4-steroids were measured. MP-parotin and the parotin-subunit stimulated the pathway of pregnenolone----17-hydroxypregnenolone----dehydroepiandrosterone---- androstenedione----testosterone and resulted in the elevation of serum testosterone levels. Cyclic AMP levels in the testicular homogenate and the motility of epididymal sperm were also increased by the treatment. On the other hand, AA-1 showed no effect on these parameters. It was concluded that andromimetic activity, which is involved in MP-parotin or parotin subunit was independent of parotin activity on the bone tissue.

This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four-thermal-cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6{mu}m, the x-ray full width at half-maximum is 250 arcseconds and the etch pit density is 3 {times} 10{sup 7}cm{sup {minus} 2}.

The dependence of the critical layer thickness hc on mole fraction x of Si1−xGex/Si heterostructures is determined by direct observations of misfit dislocations by using the electron beam induced current (EBIC) technique and transmission electron microscopy (TEM). The EBIC images of the Si1−xGex/Si interfaces show square‐grid patterns running in the 〈110〉 directions. These patterns are identified by TEM observation to be misfit dislocations generated at the Si1−xGex/Si interface. The dependence of hc on x is compared with the results reported by R. People and J. C. Bean [Appl. Phys. Lett. 47, 322 (1985) and 49, 229 (1986)]. The comparison reveals that inconsistency exists between them, especially in the range of x

GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double‐crystal x‐ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half‐maximum of the (400) reflection obtained from 4.8 μm GaP is as small as 115 arcseconds. Secondary ion mass spectroscopy shows that As atoms accumulate at the GaP/Si interfaces, playing an important role in preventing Si outdiffusion into the GaP epilayers.

It had been reported by authors that salivary gland hormone, parotin, was composed with subunit (parotin-subunit) which showed molecular weight of 45,000, and that parotin-subunit had rabbit serum calcium decreasing activity and the cross reactivity with rabbit anti parotin serum. In the present report, in order to study physiological chemistry of parotin-subunit, the influence of parotin-subunit on serum Ca and 45Ca levels relating to calcium metabolism, the distribution of 131I-parotin-subunit, the effect of parotin-subunit, on adenyl cyclase-cyclicAMP system, the anabolic action, C-terminal amino acid sequence and sugar component of parotin-subunit were investigated. The results are summarized as follows: 1) The decrease of rabbit serum Ca after injection of parotin-subunit was related to change of Ca in stable bone, but not to inhibition of bone resorption. 2) A high concentrated localization of radioactivity of 131I-parotin-subunit was found in liver, kidney and spleen, and as much as 60% of administrated radioactivity was localized in liver at 5 min after the injection. The retention of radioactivity was found in testis, seminal vesicle, prostate, parotid gland and submaxillary gland. 3) Cyclic AMP level increased significantly in metaphysial bone, submaxillary gland and plasma after administration of parotin-subunit but in other organs with localized much radioactivities, the level did not changed. Parotin-subunit activated adenyl cyclase of particular fraction of metaphysial bone. 4) The C-terminal amino acid of parotin-subunit was Leu, and its C-terminal amino acid sequence was -Val-Ser-Ala-Thr- Leu-OH by digestion of carboxypeptidase A. 5) Parotin-subunit included 3.3% of sugar which consisted of amino sugar and uronic acid.

GaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.