Room-temperature pulsed operation of a 1.5- mu m GaInAsP/InP vertical cavity surface emitting laser

Authors :: Y. Kohama
T. Tadokoro
T. Kurokawa
T. Kawakami
H. Okamoto
Source :: IEEE Transactions on Electron Devices. 39:2651-2652
Publication Year :: 1992
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1992.
Abstract: Summary form only given. Room-temperature operation of a current-injection near-1.55- mu m GaInAsP/InP vertical-cavity surface emitting laser diode (VCSELD) was achieved. The double heterostructure was grown by metal-organic chemical vapor deposition on a

Subjects :: Materials science
Laser diode
business.industry
Chemical vapor deposition
Double heterostructure
Electronic, Optical and Magnetic Materials
Vertical-cavity surface-emitting laser
Semiconductor laser theory
Gallium arsenide
law.invention
chemistry.chemical_compound
Optics
Distributed Bragg reflector laser
chemistry
law
Indium phosphide
Optoelectronics
Electrical and Electronic Engineering
business

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