0.85 µm bottom-emitting vertical-cavity surface-emitting laser diode arrays grown on AlGaAs substrates

The first 0.85 µm 8×8 bottom-emitting vertical-cavity surface-emitting laser diodes (VCSELs) have been grown on AlGaAs substrates. Their characteristics are the same as those of VCSELs grown on GaAs substrate. The authors have also fabricated 8×8 independently addressable VCSEL arrays which exhibited good lasing characteristics and uniform threshold current density.