MOCVD growth and characterization of GaAs and GaP grown on Si substrates

GaAs and GaP are grown on Si substrates by MOCVD. GaP is directly grown on Si, and GaAs is grown with the intermediate layers of GaP, GaP/GaAsP strained layer superlattice (SLS) and GaAsP/GaAs SLS. GaP and GaAs are characterized by double crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The characteristics of GaP on Si with changing the thickness and those of GaAs grown on Si with changing the intermediate layer thickness are investigated. The thermal cycle growth is employed for GaAs on Si to reduce the dislocation density.