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Presents a study which investigated the generation mechanism of crystallographic defects in Czochralski silicon (Si) doped with boron (B) during low temperature processing. Interactions between boron and intrinsic point defects in Si degenerately doped with B; Observations on the photomicrograph of an elongated hexagonal dislocation loop; B concentration profiles in annealed samples.

Presents a study that investigated the morphology of oxide precipitates in Czochralski-grown silicon degenerately doped with boron after annealing using the transmission electron microscope. Elastic stress field around a disk-shaped precipitate; Summary.

Presents a study which examined the oxygen precipitation and defect formations in Czochralski silicon doped with boron, carbon and tin studied after a two-step isochronal anneal. Interactions between doping impurities and intrinsic point defects in heavily doped silicon; Details on oxygen aggregation in a heavily doped silicon; Details of the experiment on Czochralski-grown silicon doped with boron, carbon and tin.

Presents a quantitative model for an interaction between extended dislocation loops and impurities in Czochralski silicon based upon the photoluminescence analysis. Interaction between the dislocations and impurities; Role of the dissolved oxygen concentration on the D-line luminescence; Preparation of samples used in the experiment.

Studies the effects of the denudation anneal on the precipitate dissolution and defect-free zone formation in Czochralski silicon wafers after a three-step internal gettering anneal. Precipitation of excess oxygen during the crystal growth cooling period; Effect of the denudational anneal on the precipitate dissolution in the subsurface region; Discussion on the results of the study.

Describes an experimental method to estimate a diffusivity of silicon interstitials. Importance of point defects in the process of physics of impurity diffusion; Estimation of silicon interstitial diffusivity at high temperature; Discussion on the result of the study.

Characterizes epitaxial silicon wafers and substrate interface using pulsed metal-oxide-semiconductor capacitance-time transient analysis. Observation of improvements in the generation lifetime of the epitaxial layer of samples which receive nucleation anneal; Effect of nucleation anneal on recombination lifetime; Electronic effects responsible for the limitation of the recombination lifetime of thin epitaxial layer.

Studies the influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers. Major cause of low production yield and poor integrated circuit device performance; Use of the internal gettering process utilizing the thermal defects associated with oxide precipitates; Characterization of two types of bulk microdefects using the scanning electron microscope.

Presents information on a study which preannealed substrate wafers used for fabrication of epitaxial silicon wafers heavily doped with antimony prior to epitaxial deposition. Comparison between precipitation in post-epitaxial annealed and nonannealed wafers; Types of bulk microdefects observed on the cleaved surface of samples after the Wright etch; Reexamination of etched samples under the scanning electron microscope.

Presents a study which examined the behavior of iron atoms in Czochralski silicon during a simulated integrated circuit device fabrication process. Iron precipitation at a bulk stacking fault containing an oxide precipitate; Reaction of oxygen atoms in the oxide precipitate via an iron oxide phase transformation; Difference of iron precipitation at the bulk defects from that of other transition metals.

Focuses on a study which observed the precipitation of metal silicides in Czochralski silicon crystals contaminated with 3d transition metals. Background on 3d transition-metal silicides; Preparation of the crystals; Description of the crystal's growth.

Presents a study which investigated the dissolution kinetics of D defects in p- and n-type Czochralski silicon during high temperature annealing. Theoretical background; Computational approach; Results.

Presents a study which developed an empirical solution for the oxygen distribution in a thin epitaxial silicon layer and substrate wafers heavily doped with boron and antimony accounting for the prebake step. Importance of oxygen diffusion in silicon technology; Reason for the preferential fabrication of static and dynamic random access memory devices; Parameters used for the curve fitting to the oxygen concentration profiles.

Deals with a study which investigated the effect of carbon and tin on the oxygen precipitation and the thermal donor formation in Czochralski-grown silicon after an extended isochronal anneal. Oxygen precipitation on doped silicon; Role of the lattice strain in oxygen precipitation.

Studies the oxygen diffusion in carbon-doped silicon. Effects of oxygen precipitation on silicon wafers; Details on the experiment; Discussion on the results of the study.

Examines the effect of boron doping concentration on the generation of crystal particles in p-type Czochralski silicon wafers. Concentration of intrinsic point defects in growing Czochralski silicon; Suppression of the generation of crystal originated particles; Dominance of negatively charged vacancies at high temperatures.

Examines the effect of high-temperature annealing on the dissolution of D-defects in n-type Czochralski silicon. Production of D-defects by vacancy aggregation; Influence of D-defects on the gate oxide integrity of metal-oxide semiconductor devices; Improvement of integrated circuits for the removal of D-defects.

Examines the effect of point defect reaction on behavior of boron and oxygen in degenerately doped Czochralski silicon after ambient annealing. Accumulation of boron atoms near the silicon surface; Retardation of oxygen outdiffusion; Use of high resolution electron microscopy.

Examines the formation kinetics of oxygen thermal donors in silicon. Basis for the aggregation process of oxygen atoms at the thermal donor annealing temperatures; Linear increase of the concentration with time; Existence of oxygen atoms in the electrically active clusters.

Determines the solubility of interstitial oxygen in silicon. Presentation of oxygen precipitation rate; Description of the solubility by the Arrhenius equation; Observation of dissolved oxygen concentration in Czochralski-grown silicon.

Photoluminescence at the photon energies of 0.808 and 0.874 eV was observed in silicon containing a high concentration of carbon after a two-step isochronal anneal. The annealing sequence consisted of a low-temperature isochronal anneal and a 1050 °C anneal, respectively. The observed luminescence had the photon energies corresponding to those of the D lines which are known to arise from the interstitial-type dislocation loops. In silicon containing a high concentration of carbon, a formation of the dislocation loops was hypothesized to occur via a condensation of the excess silicon interstitials, originated from the agglomerates of interstitial carbons. [ABSTRACT FROM AUTHOR]

The outdiffusion profiles of oxygen from (100) Czochralski-grown silicon, doped with antimony at different doping concentrations ranging between 6×1015 and 3×1018 atoms/cm3, were measured using secondary ion mass spectrometry. From the oxygen depth profiles the diffusivity of 16O was determined. It was found that the outdiffusion of 16O was not influenced by the antimony doping concentration. The diffusivity of oxygen at 1100 °C, as determined in this work, was 1.1×10-10 cm2/s. This result agrees well with the previous literature values, D=0.07 exp(-2.44/kT), which were determined in float-zone silicon. [ABSTRACT FROM AUTHOR]