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Effect of the boron doping concentration and Fermi level on the generation of crystal originated....
- Source :
-
Applied Physics Letters . 10/17/1994, Vol. 65 Issue 16, p2069. 3p. 3 Graphs. - Publication Year :
- 1994
-
Abstract
- Examines the effect of boron doping concentration on the generation of crystal particles in p-type Czochralski silicon wafers. Concentration of intrinsic point defects in growing Czochralski silicon; Suppression of the generation of crystal originated particles; Dominance of negatively charged vacancies at high temperatures.
- Subjects :
- *SEMICONDUCTOR doping
*CRYSTALS
*SEMICONDUCTOR wafers
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 65
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4233169
- Full Text :
- https://doi.org/10.1063/1.112795