Aggregations of silicon interstitials and interstitial defect species in Czochralski silicon degenerately doped with boron during low temperature processing.

Presents a study which investigated the generation mechanism of crystallographic defects in Czochralski silicon (Si) doped with boron (B) during low temperature processing. Interactions between boron and intrinsic point defects in Si degenerately doped with B; Observations on the photomicrograph of an elongated hexagonal dislocation loop; B concentration profiles in annealed samples.