Back to Search
Start Over
Oxygen precipitation and thermal donor formation in Czochralski-grown silicon doped with carbon and tin.
- Source :
-
Journal of Applied Physics . 2/15/1991, Vol. 69 Issue 4, p2737. 3p. 1 Diagram, 1 Chart, 1 Graph. - Publication Year :
- 1991
-
Abstract
- Deals with a study which investigated the effect of carbon and tin on the oxygen precipitation and the thermal donor formation in Czochralski-grown silicon after an extended isochronal anneal. Oxygen precipitation on doped silicon; Role of the lattice strain in oxygen precipitation.
- Subjects :
- *CARBON
*TIN
*PRECIPITATION (Chemistry)
*OXYGEN
*ANNEALING of metals
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7629119
- Full Text :
- https://doi.org/10.1063/1.348964