1. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure.
- Author
-
Li, Ruo-Han, Fei, Wu-Xiong, Tang, Rui, Wu, Zhao-Xi, Duan, Chao, Zhang, Tao, Zhu, Dan, Zhang, Wei-Hang, Zhao, Sheng-Lei, Zhang, Jin-Cheng, and Hao, Yue
- Subjects
METAL oxide semiconductor field-effect transistors ,THRESHOLD voltage ,GALLIUM nitride ,FIELD-effect transistors ,PERMITTIVITY ,DOPING agents (Chemistry) - Abstract
The threshold voltage (V
th ) of the p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p , polarization charge density σb , and equivalent unite capacitance Coc . It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth , and threshold voltage |Vth | increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth |. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 1016 cm−3 at VGS = –12 V and VDS = –10 V. [ABSTRACT FROM AUTHOR]- Published
- 2021
- Full Text
- View/download PDF