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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure.
- Source :
- Chinese Physics B; Aug2021, Vol. 30 Issue 8, p1-5, 5p
- Publication Year :
- 2021
-
Abstract
- The threshold voltage (V<subscript>th</subscript>) of the p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ<subscript>1,p</subscript>, polarization charge density σ<subscript>b</subscript>, and equivalent unite capacitance C<subscript>oc</subscript>. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V<subscript>th</subscript>, and threshold voltage |V<subscript>th</subscript>| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |V<subscript>th</subscript>|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 10<superscript>16</superscript> cm<superscript>−3</superscript> at V<subscript>GS</subscript> = –12 V and V<subscript>DS</subscript> = –10 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 30
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 153377409
- Full Text :
- https://doi.org/10.1088/1674-1056/ac0793