Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure.

MLA

Li, Ruo-Han, et al. “Investigation on Threshold Voltage of P-Channel GaN MOSFETs Based on p-GaN/AlGaN/GaN Heterostructure.” Chinese Physics B, vol. 30, no. 8, Aug. 2021, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/ac0793.

APA

Li, R.-H., Fei, W.-X., Tang, R., Wu, Z.-X., Duan, C., Zhang, T., Zhu, D., Zhang, W.-H., Zhao, S.-L., Zhang, J.-C., & Hao, Y. (2021). Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure. Chinese Physics B, 30(8), 1–5. https://doi.org/10.1088/1674-1056/ac0793

Chicago

Li, Ruo-Han, Wu-Xiong Fei, Rui Tang, Zhao-Xi Wu, Chao Duan, Tao Zhang, Dan Zhu, et al. 2021. “Investigation on Threshold Voltage of P-Channel GaN MOSFETs Based on p-GaN/AlGaN/GaN Heterostructure.” Chinese Physics B 30 (8): 1–5. doi:10.1088/1674-1056/ac0793.