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Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm.
- Source :
- Chinese Physics Letters; Nov2015, Vol. 32 Issue 11, p1-1, 1p
- Publication Year :
- 2015
-
Abstract
- We report Al<subscript>0.30</subscript>Ga<subscript>0.70</subscript>N/GaN/Al<subscript>0.07</subscript>Ga<subscript>0.93</subscript>N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm<superscript>2</superscript>/V·s, sheet carrier density improved from 0.87×10<superscript>13</superscript> to 1.15×10<superscript>13</superscript> cm<superscript>−2</superscript>, edge dislocation density reduced from 2.4×10<superscript>9</superscript> to 1.3×10<superscript>9</superscript> cm<superscript>−2</superscript>, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 32
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 111017834
- Full Text :
- https://doi.org/10.1088/0256-307X/32/11/117202