Cite
Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm.
MLA
Li Xiang-Dong, et al. “Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/Mm.” Chinese Physics Letters, vol. 32, no. 11, Nov. 2015, p. 1. EBSCOhost, https://doi.org/10.1088/0256-307X/32/11/117202.
APA
Li Xiang-Dong, Zhang Jin-Cheng, Guo Zhen-Xing, Jiang Hai-Qing, Zou Yu, Zhang Wei-Hang, He Yun-Long, Jiang Ren-Yuan, Zhao Sheng-Lei, & Hao Yue. (2015). Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm. Chinese Physics Letters, 32(11), 1. https://doi.org/10.1088/0256-307X/32/11/117202
Chicago
Li Xiang-Dong, Zhang Jin-Cheng, Guo Zhen-Xing, Jiang Hai-Qing, Zou Yu, Zhang Wei-Hang, He Yun-Long, Jiang Ren-Yuan, Zhao Sheng-Lei, and Hao Yue. 2015. “Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/Mm.” Chinese Physics Letters 32 (11): 1. doi:10.1088/0256-307X/32/11/117202.