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Design and simulation of AlN-based vertical Schottky barrier diodes.
- Source :
- Chinese Physics B; Jun2021, Vol. 30 Issue 6, p1-5, 5p
- Publication Year :
- 2021
-
Abstract
- The key parameters of vertical AlN Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated. The specific on-resistance (R<subscript>on,sp</subscript>) decreased to 0.5 mΩ ⋅ cm<superscript>2</superscript> and the breakdown voltage (V<subscript>BR</subscript>) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10<superscript>15</superscript> cm<superscript>−3</superscript> to 3 × 10<superscript>16</superscript> cm<superscript>−3</superscript>. The V<subscript>BR</subscript> increases from 1.5 kV to 3.4 kV and the R<subscript>on,sp</subscript> also increases to 12.64 mΩ ⋅ cm<superscript>2</superscript> by increasing DLT from 4-μm to 11-μm. The V<subscript>BR</subscript> enhancement results from the increase of depletion region extension. The Baliga's figure of merit (BFOM) of 3.8 GW/cm<superscript>2</superscript> was obtained in the structure of 11-μm DLT and 10<superscript>16</superscript> cm<superscript>−3</superscript> DLC without FP. When DLT or DLC is variable, the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate (FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS. [ABSTRACT FROM AUTHOR]
- Subjects :
- BREAKDOWN voltage
ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 30
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 153377316
- Full Text :
- https://doi.org/10.1088/1674-1056/abe0c7