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The article presents the author's views on the use of semiconductors in automotive supply chains. Various topics discussed include quality standards of integrated circuits (IC), chip failure rates, images of scanning electron microscope (SEM) and analysis of baseline defectivity during the tool monitoring.

The article discusses the preparation of the Scanning Electron Microscope (SEM) cross-sections through Broad Ion Beam milling and site-specific High Accuracy Cleaving. It is noted that the cross sections visualizes, characterizes and measures device structure or film stack chemistry. The methods and case studies and results of the SEM preparation are discussed and demonstrated.

The article offers information on a test method developed by equipment supplier Hysitron to study crack formation in copper (Cu)/low-k back-end-of-line (BEOL) stacks. It mentions that cracks can form when local mechanical stresses become too high. It adds that for the test, a PicoIndenter is integrated into a scanning electron microscope (SEM) and a sample preparation using a focused ion beam (FIB),.

The article offers information on the study conducted by Jun Lou, a professor at the Rice University in Houston, Texas, about the fracture strength of large-area molybdenum diselenide (MoSe2) crystals. It mentions that the study led by researchers from the US and China suggests that MoSe2 were more brittle compared with borophene monolayers after being tested inside a scanning electron microscope (SEM).

The article evaluates the Tecnai Osiris scanning/transmission electron microscope (S/TEM) from Fei Co.

The article offers information on the Helios Nanolab x50 Dual Beam system featuring a high-resolution scanning electron microscope (SEM) and focused-ion beam (FIB) for failure analysis applications from FEI Co.

The article evaluates the Helios NanoLabx50 DualBeam Series 450(S) and 650 structures for the integration of extreme high-resolution scanning electron microscope (XHR SEM) from Fei Co.

The article evaluates the Nova NanoSEM 30 series scanning electron microscope for Nova Corp.

The article evaluates the Quanta 3D FEG analytical DualBeam from FEI Co.

Reports on the development of a scanning electron microcope by researchers from Horiba Ltd., Ulvac Inc., and Tokyo University in Japan. Features of the proof-of concept prototype; Use of a ceramic column with integrated electrostatic lenses made by MEMS technology; Provision of precision processing and assembly necessary to make the smaller and more effective electrostatic lenses.

Reports on the joint development by engineers at Infineon Technologies and IBM of a scanning electron microscope which shows a fabricated deep-trench capacitor dynamic random-access memory cell with a vertical access transistor.

Focuses on parallel scanning probes as alternative being considered by Quate Group at the Stanford University to the more expensive next generation lithography (NGL) methods. Remarks from Stephen Minne, consulting assistant professor in Stanford; Challenge for atomic force microscopes (AFM) lithography; Requirement for making conventional AFM practical for lithography.