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IBM's vertical transistor.

Authors :
Burggraaf, Pieter "Pete"
Source :
Solid State Technology. Feb2000, Vol. 43 Issue 2, p18. 1/4p. 1 Diagram.
Publication Year :
2000

Abstract

Reports on the joint development by engineers at Infineon Technologies and IBM of a scanning electron microscope which shows a fabricated deep-trench capacitor dynamic random-access memory cell with a vertical access transistor.

Subjects

Subjects :
*SCANNING electron microscopes
*TRANSISTORS

Details

Language :
English
ISSN :
0038111X
Volume :
43
Issue :
2
Database :
Academic Search Index
Journal :
Solid State Technology
Publication Type :
Academic Journal
Accession number :
2831728

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Authors Abstract Subjects Details