1. Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations
- Author
-
Stefan Ivanov, V. N. Jmerik, S I Troshkov, Pavel N. Brunkov, A. V. Nashchekin, Dmitrii V. Nechaev, and A. N. Semenov
- Subjects
010302 applied physics ,Nanostructure ,Materials science ,business.industry ,chemistry.chemical_element ,Crystal growth ,02 engineering and technology ,Substrate (electronics) ,Surface finish ,Nitride ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,0103 physical sciences ,Sapphire ,Optoelectronics ,Nanorod ,0210 nano-technology ,business ,Indium - Abstract
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.
- Published
- 2018