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Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover...

Using the transfer matrix method, the absorption, reflection, and nonreciprocity of the cylindrical photonic crystals (CPCs) consisting of graphene and two layers of ordinary medium cascaded by a periodic sequence and a Rudin–Shapiro quasiperiodic sequence are investigated under a large incidence angle of electromagnetic wave. By comparing the cascade of two periodic structures and the case of a single periodic structure, it is concluded that the structure proposed in this paper has better nonreciprocal phenomena and wider relative absorption bandwidth at a large incidence angle, reaching 162.2%, which is also much higher than the general planar photonic crystals. The absorption performance of this structure in TE and TM modes is compared at different angles and it is found that TM mode has a wider absorption bandwidth and has an ideal bandwidth in a large range of incident angle from 20° to 80°. Meanwhile, the optimum parameters of chemical potential and medium thickness are discussed, which can meet the requirements of large absorption bandwidth and significant nonreciprocity at a large incident angle. The CPCs embedded in graphene adopted in this paper are structures that have never been studied before. The electrical conductivity of graphene can be adjusted by the chemical potential, which can more conveniently realize many optical phenomena and provide reference and application values for optical sensing, optical filtering, and optical detection.

In this paper, circularly polarized metasurface radiators (meta-radiator) are elaborately designed with low-profile, small footprint, and highly efficient specifications. The proposed array consists of single-feed dense radiating meta-atoms that overall occupies a small area of 1.57 λ 0 × 1.57 λ 0 at f = 5.8 GHz. The inter-element coupling is involved by analyzing the contributing meta-atoms with Floquet boundary conditions. For demonstration purposes, an 8 × 8 sample of meta-radiators excited by an isolated network beneath the ground plane is fabricated. Both numerical and experimental results demonstrate that the meta-radiator exposes a pure left-hand circularly polarized radiation with a peak broadside directivity, a realized gain, and an axial ratio of 14.9 dBi, 14.2 dB, and 1.28 dB, respectively. Numerical simulations indicate that the aperture, radiation, and total efficiencies are as high as 99%, 97.5%, and 84.3%, respectively. In comparison with the conventional array antennas with similar performances, the proposed meta-radiator provides a higher aperture efficiency, in a simpler manner to achieve circular polarization, and more compact size as discussed throughout the paper. This new class of radiating architectures may find great potential applications in target detection systems and wireless communications.

Due to the exciting physical mechano-bactericidal approach developed in recent years using nanopatterned surfaces with its potential applications in biomedical engineering, now it becomes crucially important to fabricate optimal surface structures so as to achieve the best bactericidal ability. In this paper, the bactericidal efficacy of the cylindrical nanopillar-patterned surface and the sinusoidal nanopillar-patterned surface is presented via minimizing total free energy for a bacterial cell adhered on these two kinds of surfaces. Our theoretical analyses show that the adhesion depth at equilibrium along the nanopillar shafts and the corresponding stretching degree is related to the the nanopillar density and nanopillar radius. The bactericidal efficacy on the nanopillar-patterned surface is determined by the combination of nanopillar density and naopillar radius, which is also supported by the phase diagrams obtained, showing that at large internanopillar spacing and nanopillar radius, the sinusoidal nanopillar-patterned surface is more advantageous in bactericidal efficacy, while in small interspacing and nanopillar radius, the cylindrical nanopillar-patterned surface structure is more powerful. The conclusions obtained in this paper unveil how the mechano-bactericidal effect is achieved by tuning the topography of the nanopatterned surface, a technique helpful to the optimal design and fabrication of bio-mimicking nanotextured surfaces.

We have been observing the kinetic buildup of electrical conduction current upon x-ray irradiation in ZnSe single crystals. The objective is to understand the behavior of ZnSe crystals under x-ray irradiation, toward their potential use in x-ray detectors that do not require cooling and can operate above room temperature. The paper focuses on the factors that affect the behavior of traps at room temperature. A model is developed to understand the origin of the behavior of the conduction current under x-ray irradiation, taking into account the contributions from three types of traps for electrons (shallow, phosphorescent, and deep) and two luminescence centers (luminescence bands of 630 and 970 nm). Principally, the model is applied to the fitting of the experimental curves. Consequently, the work puts in evidence the role of electron accumulation on traps on the x-ray conduction current buildup on ZnSe crystals. We have obtained experimental dependencies of x-ray conduction current buildup current at 85 K, which indicates the presence of delay in comparison with x-ray luminescence buildup. This paper will demonstrate the effectiveness of our theoretical method in the framework of the multi-center model for wide-gap semiconductors.

Defects influence the electronic and optical properties of crystals, so their identification is crucial to develop device technology for materials of micro-/optoelectronics and photovoltaics. The identification requires the accurate calculation of the electronic transitions and the paramagnetic properties of defects. The achievable accuracy is strongly limited in the case of the (semi)local approximations to density functional theory, because of the underestimation of the gap and of the degree of localization. In the past two decades, hybrid functionals, mixing semilocal and nonlocal exchange semiempirically, have emerged as an alternative. Very often, however, the parameters of such hybrids have to be tuned from material to material. In this paper, we describe the theoretical foundations for the proper tuning and show that if the relative positions of the band edge states are well reproduced, and the generalized Koopmans's theorem is fulfilled by the given parameterization, the calculated defect levels and localizations can be very accurate. As demonstrated here, this can be achieved with the two-parameter Heydt-Scuseria-Ernzerhof hybrid, HSE(α,μ) for diamond, Si, Ge, TiO2, GaAs, CuGaS(Se)2, GaSe, GaN, and Ga2O3. The paper describes details of the parameterization process and discusses the limitations of optimizing HSE functionals. Based on the gained experience, future directions for improving exchange functionals are also provided.

InGaN-based light-emitting diodes (LEDs) have higher luminescence efficiency than other materials used for the blue and green LEDs in spite of their relatively high dislocation density. Localization theory has been used to explain this phenomenon, but the direct observation of localization states in the InGaN active region has been rarely reported. In this paper, we propose an LED structure to obtain higher luminescence efficiency in the yellow-green LEDs and directly observe the transition of carriers between different localization states. The localization states were investigated and confirmed by temperature-dependent photoluminescence and excitation power-dependent photoluminescence. The value of the external quantum efficiency also exhibited a higher radiative efficiency of the quantum well with a higher degree of localization states. These results offer a promising means of realizing high-luminescence LEDs.InGaN-based light-emitting diodes (LEDs) have higher luminescence efficiency than other materials used for the blue and green LEDs in spite of their relatively high dislocation density. Localization theory has been used to explain this phenomenon, but the direct observation of localization states in the InGaN active region has been rarely reported. In this paper, we propose an LED structure to obtain higher luminescence efficiency in the yellow-green LEDs and directly observe the transition of carriers between different localization states. The localization states were investigated and confirmed by temperature-dependent photoluminescence and excitation power-dependent photoluminescence. The value of the external quantum efficiency also exhibited a higher radiative efficiency of the quantum well with a higher degree of localization states. These results offer a promising means of realizing high-luminescence LEDs.

This paper presents a novel thermochromic induced transmittance filter (ITF) based on VO2 films. The ITF structure enables high transmittance in the short wavelength range with wide rejection at longer wavelengths, which meets the requirements of thermochromic VO2 for the metal-insulator transition. Thus, the VO2-based ITFs are designed and fabricated based on the induced transmittance effect, and a graded-index material TiO2 is initially adopted for the simplified structure of VO2-based ITF comparing standard ITFs. The VO2-based ITF's properties are characterized systematically and compared with those of VO2 films. Favorable results of crystallinity, surface roughness, hydrophobicity, the thermal hysteresis width, and pleasant appearance color are achieved in these VO2-based ITFs. Moreover, luminous transmittance Tlum (380–780 nm) of 48.8% and a solar modulation ability ΔTsol of 6.2% are achieved with an ideal spectrum shape in the VO2-based ITF, which provides a highly efficient solution to improve thermochromic VO2 films and related field.This paper presents a novel thermochromic induced transmittance filter (ITF) based on VO2 films. The ITF structure enables high transmittance in the short wavelength range with wide rejection at longer wavelengths, which meets the requirements of thermochromic VO2 for the metal-insulator transition. Thus, the VO2-based ITFs are designed and fabricated based on the induced transmittance effect, and a graded-index material TiO2 is initially adopted for the simplified structure of VO2-based ITF comparing standard ITFs. The VO2-based ITF's properties are characterized systematically and compared with those of VO2 films. Favorable results of crystallinity, surface roughness, hydrophobicity, the thermal hysteresis width, and pleasant appearance color are achieved in these VO2-based ITFs. Moreover, luminous transmittance Tlum (380–780 nm) of 48.8% and a solar modulation ability ΔTsol of 6.2% are achieved with an ideal spectrum shape in the VO2-based ITF, which provides a highly efficient solution to improve ther...

In this paper, a gradient-index lens is designed to implement an acoustic Bessel beam. Here, the wave from the point source is reshaped to the Bessel beam with the energy concentrated near the axial direction and almost no divergence. The two-dimensional distribution of the gradient refractive index is obtained based on the analysis of the impedance matching theory. The interface reflection is reduced significantly due to the impedance matching with air. The effect of the acoustic Bessel lens is found to work in a broadband with the use of the subwavelength unit cell and the finite-element simulations. Our results may provide the potential applications for medical ultrasound imaging and signal detection.In this paper, a gradient-index lens is designed to implement an acoustic Bessel beam. Here, the wave from the point source is reshaped to the Bessel beam with the energy concentrated near the axial direction and almost no divergence. The two-dimensional distribution of the gradient refractive index is obtained based on the analysis of the impedance matching theory. The interface reflection is reduced significantly due to the impedance matching with air. The effect of the acoustic Bessel lens is found to work in a broadband with the use of the subwavelength unit cell and the finite-element simulations. Our results may provide the potential applications for medical ultrasound imaging and signal detection.

This paper reports the fabrication of InN layers on the epitaxial graphene (EG) using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the fabrication of InN, single crystalline EG with step and terrace structure was formed on 6H-SiC (0001) substrate in an Ar ambient by the Si sublimation method. Single crystalline epitaxial layers of InN with smooth surfaces are successfully fabricated on the EG using RF-MBE. InN layers with terrace and step structure are grown on the graphene surface up to 2MLs, and InN are grown in a layer by layer 2D growth mode. If the number of layers is increased above 3 MLs, the terrace and steps disappear, and the growth mode changes to 3D mode. The Raman spectroscopy analysis shows that the interfacial stress is reduced for the InN layer grown on the EG surface. The quality of the grown InN layer on the EG surface achieved at present is comparable to the InN film grown on sapphire. This work opens the possibility of growing high-quality InN layers on the EG surface in the near future.This paper reports the fabrication of InN layers on the epitaxial graphene (EG) using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the fabrication of InN, single crystalline EG with step and terrace structure was formed on 6H-SiC (0001) substrate in an Ar ambient by the Si sublimation method. Single crystalline epitaxial layers of InN with smooth surfaces are successfully fabricated on the EG using RF-MBE. InN layers with terrace and step structure are grown on the graphene surface up to 2MLs, and InN are grown in a layer by layer 2D growth mode. If the number of layers is increased above 3 MLs, the terrace and steps disappear, and the growth mode changes to 3D mode. The Raman spectroscopy analysis shows that the interfacial stress is reduced for the InN layer grown on the EG surface. The quality of the grown InN layer on the EG surface achieved at present is comparable to the InN film grown on sapphire. This work opens the possibility of growing high-quality InN layers on the...

In this paper, we demonstrate a new method to control the enhanced transmission due to Fabry–Perot resonances through an array of dielectric-loaded slots in a thick metallic screen. We obtain approximate analytical formulas for each polarization (TM and TE) using a mode-matching technique based on the assumption that the slots are small compared to a free-space wavelength and that the metallic screen is a perfect electric conductor as is appropriate for microwave frequency applications. We show that the bandwidth and locations of enhanced transmission can be controlled by the angle of incidence or by making the material filling the slots inhomogeneous. Computational results are given that demonstrate the influence of the angle of incidence on the enhanced transmission bandwidth. We show that the separation between enhanced transmission frequencies can be controlled by introducing a gap within the slot with a different dielectric constant. Also, we illustrate how the total transmission bandwidth can be increased by adjusting the angle of incidence and the gap size.In this paper, we demonstrate a new method to control the enhanced transmission due to Fabry–Perot resonances through an array of dielectric-loaded slots in a thick metallic screen. We obtain approximate analytical formulas for each polarization (TM and TE) using a mode-matching technique based on the assumption that the slots are small compared to a free-space wavelength and that the metallic screen is a perfect electric conductor as is appropriate for microwave frequency applications. We show that the bandwidth and locations of enhanced transmission can be controlled by the angle of incidence or by making the material filling the slots inhomogeneous. Computational results are given that demonstrate the influence of the angle of incidence on the enhanced transmission bandwidth. We show that the separation between enhanced transmission frequencies can be controlled by introducing a gap within the slot with a different dielectric constant. Also, we illustrate how the total transmission bandwidth can be inc...

III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation–dislocation and carrier–dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-ba...

Mechanical resonators are excellent transducers for ultrasensitive detection applications. Recent advances such as vectorial force sensing and ultrahigh-resolution mass spectra rely on the identification of two flexural vibrational modes of a resonator. The orientations of the flexural modes with respect to the incident optical axis are crucial parameters for a cantilevered resonator. Previous methods have adopted complex experimental setups using quadrant photodetectors or have required simultaneous detection of two flexural modes of the cantilever. In this paper, we propose a method for determination of the orientations of the flexural vibrations of a cantilever using a microlens optical fiber interferometer that takes both the light interference and the lateral light scattering of the cantilever into account. We demonstrated the method by experimentally determining the orientation of the first three flexural vibrational modes of a thermally driven microwire. Our method can be used to characterize individual flexural modes with arbitrary orientations and thus provides a new tool for detecting vectorial forces.Mechanical resonators are excellent transducers for ultrasensitive detection applications. Recent advances such as vectorial force sensing and ultrahigh-resolution mass spectra rely on the identification of two flexural vibrational modes of a resonator. The orientations of the flexural modes with respect to the incident optical axis are crucial parameters for a cantilevered resonator. Previous methods have adopted complex experimental setups using quadrant photodetectors or have required simultaneous detection of two flexural modes of the cantilever. In this paper, we propose a method for determination of the orientations of the flexural vibrations of a cantilever using a microlens optical fiber interferometer that takes both the light interference and the lateral light scattering of the cantilever into account. We demonstrated the method by experimentally determining the orientation of the first three flexural vibrational modes of a thermally driven microwire. Our method can be used to characterize indiv...

In this paper, we propose a simple and effective method to manipulate photonic spin accumulation with an applied magnetic field. When a linearly polarized Gaussian light beam is reflected from the prism-air interface at the Brewster angle, the magnitude and direction of the photonic spin accumulation can be flexibly modulated by adjusting the applied magnetic field. Importantly, the maximum displacement of photonic spin accumulation can reach about 39.14 μ m, which provides the opportunity to directly observe photonic spin accumulation without weak measurements. These findings may hold potential applications for manipulating and detecting the electron spin current, leading to the development of a new spintronic device.In this paper, we propose a simple and effective method to manipulate photonic spin accumulation with an applied magnetic field. When a linearly polarized Gaussian light beam is reflected from the prism-air interface at the Brewster angle, the magnitude and direction of the photonic spin accumulation can be flexibly modulated by adjusting the applied magnetic field. Importantly, the maximum displacement of photonic spin accumulation can reach about 39.14 μ m, which provides the opportunity to directly observe photonic spin accumulation without weak measurements. These findings may hold potential applications for manipulating and detecting the electron spin current, leading to the development of a new spintronic device.

Plasmonic structure (PS) has recently been demonstrated to provide full control of dispersion characteristics by virtue of spoof surface plasmonic polariton (SSPP). In this paper, a comprehensive scheme is proposed, which develops the non-planar PS as a covering on the absorber to enhance the k-vector matching absorption in a wider frequency band. Owing to the dispersion engineering of SSPP, our theoretical investigation shows that the PS covering based on a straight wire array can not only enhance the k-vector matching absorption of the ground absorber at low frequency, but also achieve the broadband absorption at high frequency. As a proof, two hybrid plasmonic metamaterial absorbers (PMAs) based on the combinations of PS covering and various absorbers are proposed here. Simulations and experimental measurements demonstrate that two kinds of hybrid PMAs can simultaneously achieve broadband absorption enhancement, especially for the lower-frequency absorption. Our proposed strategy succeeds in the comprehensive utilization of dispersion engineering for broadband absorption enhancement, and a wide range of applications is expected to emerge from our design concept ranging from microwave to optical frequencies.Plasmonic structure (PS) has recently been demonstrated to provide full control of dispersion characteristics by virtue of spoof surface plasmonic polariton (SSPP). In this paper, a comprehensive scheme is proposed, which develops the non-planar PS as a covering on the absorber to enhance the k-vector matching absorption in a wider frequency band. Owing to the dispersion engineering of SSPP, our theoretical investigation shows that the PS covering based on a straight wire array can not only enhance the k-vector matching absorption of the ground absorber at low frequency, but also achieve the broadband absorption at high frequency. As a proof, two hybrid plasmonic metamaterial absorbers (PMAs) based on the combinations of PS covering and various absorbers are proposed here. Simulations and experimental measurements demonstrate that two kinds of hybrid PMAs can simultaneously achieve broadband absorption enhancement, especially for the lower-frequency absorption. Our proposed strategy succeeds in the compre...

In this paper, the design, fabrication, and measurement of a high-performance metamaterial absorber (MMA) have been presented. The three major concerns of MMA's are narrow bandwidth, angle sensitivity, and uncontrollable polarization. By smartly controlling the proposed design, the solutions to these three concerns of MMA are given in this paper. By integrating the design with varactor diodes, we make the MMA tunable to wide frequency ranges. Frequency tunability ranges from 4.2 to 7 GHz. By using circular sectors in the resonator, wide incident angle insensitivity has been achieved. The presented MMA exhibits more than 80% absorptivity up to 70° incident angles. With the proposed design, it is possible to control either TM or TE polarization resonant frequency by fixing the resonant frequency of other polarization. Also, a biasing technique which is simple and effective to control both TM and TE resonant frequencies simultaneously is given in this paper. Moreover, all these advantages have been achieved by using a single layer low cost FR4 material having thickness 0.6 mm as a substrate. By using a standard parameter retrieval technique, the real and imaginary parts of both permittivity and permeability of the presented MMA are calculated. It is expected that the presented work improves the state-of-the-art in the smart metamaterial absorber domain.

Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. In this paper, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. The purpose of using the architecture of nand flash memories is to reuse a mature technology to create large arrays of silicon qubits. Current high-density nand flash memories use sufficiently small FG cells to make the number of electrons stored in each cell small and countable. The high packing density of these cells creates mutual capacitive couplings that can be used to generate cell-to-cell interactions. We explore these characteristics to derive an Ising Hamiltonian for the FG system in the single-electron regime. Considering the size of a cell (10 nm), the ideal operation temperature of a quantum annealer based on FG cells is estimated to be approximately that of liquid nitrogen. Assuming the parameters of a commercial 64 Gbit nand, we estimate that it is possible to create 2-megabyte (MB) qubit systems solely using conventional fabrication processes. Our proposal demonstrates that a large qubit system can be obtained as a natural extension of the miniaturization of commercial-grade electronics, although more effort will likely be required to achieve high-quality qubits.Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. In this paper, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. The purpose of using the architecture of nand flash memories is to reuse a mature technology to create large arrays of silicon qubits. Current high-density nand flash memories use sufficiently small FG cells to make the number of electrons stored in each cell small and countable. The high packing density of these cells creates mutual capacitive couplings that can be used to generate cell-to-cell interactions. We explore these characteristics to derive an Ising Hamiltonian for the FG system in the single-electron regime. Considering the size of a cell (10 nm), the ideal operation temperature of a quantum annealer based on FG cells is estimated to be approximately that of liquid nitr...

This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire or nanosheet. Multivalley quantum-transport simulations are used to demonstrate the manifestation of minibands and minibandgaps in the transmission spectra of such a superlattice. We find that the presence of different valleys in the conduction band of silicon favors a nanowire with a rectangular cross section for effective energy filtering. The obtained energy filter can consequently be used in the source extension of a field-effect transistor to prevent high-energy electrons from contributing to the leakage current. Self-consistent Schrodinger-Poisson simulations in the ballistic limit show minimum subthreshold swings of 6 mV/decade for geometric superlattices with indentations. The obtained theoretical performance metrics for the simulated devices are compared with conventional III-V superlatticeFETs and TunnelFETs. The adaptation of the quantum transmitting boundary method to the finite-element simulation of 3-D structures with anisotropic effective mass is presented in Appendixes A and B. Our results bare relevance in the search for steep-slope transistor alternatives which are compatible with the silicon industry and can overcome the power-consumption bottleneck inherent to standard CMOS technologies.This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire or nanosheet. Multivalley quantum-transport simulations are used to demonstrate the manifestation of minibands and minibandgaps in the transmission spectra of such a superlattice. We find that the presence of different valleys in the conduction band of silicon favors a nanowire with a rectangular cross section for effective energy filtering. The obtained energy filter can consequently be used in the source extension of a field-effect transistor to prevent high-energy electrons from contributing to the leakage current. Self-consistent Schrodinger-Poisson simulations in the ballistic limit show minimum subthreshold swings of 6 mV/decade for geometric superlattices with indentations. The obtained theoretical performance metrics for the simulated devices are ...

Fiber Bragg Gratings (FBGs) are gaining acceptance as velocity/pressure gauges in the fields of detonation and shock physics on account of their sensitivity, small size, flexibility, electromagnetic immunity, and wavelength-encoded feature. Chirped FBGs (CFBGs) are investigated as wavelength-to-position discriminators with the purpose of monitoring pressure/velocity profiles over a distance range of typically 100 mm. The use of CFBGs simplifies both sensor deployment and data retrieval and finally improves the accuracy due to the increased number of measurement data. In this paper, the metrological performance of CFBGs used as in situ distributed shock pressure/velocity gauges is investigated both theoretically and experimentally in a planar shock loading configuration with an aluminum-based flyer and target. In the intermediate range for shock stress, i.e., less than the Hugoniot Elastic Limit (HEL) of silica, CFBGs provide simultaneous measurements of both shockwave velocity and stress within the target material. A Bragg wavelength-to-stress model is proposed that takes into account (i) the state-of-stress within the target material, (ii) the stress coupling coefficient due to imperfect impedance matching between the target material and the silica fiber, (iii) the conversion of the state-of-stress into a state-of-strain within the silica fiber, and (iv) the conversion of strain data into observable Bragg wavelength shifts. Finally, the model also takes into account the pressure dependence of constitutive parameters for silica and aluminum. Experiments were performed in planar shock loading using CFBGs as stress gauges, bonded along the target axis with Araldite glue. 6061-T6 aluminum flyers were launched at several velocities by a gas gun onto targets of the same material. A free-space Czerny-Turner (CT) spectrometer and an integrated-optics Arrayed-Waveguide Grating (AWG) were both used as dynamic spectrum analyzers. Experimental Bragg wavelength shifts agree well with theoretical predictions for both elastic and hydrodynamic planar shock loading of 6061-T6 aluminum, opening up large perspectives for shock physics experiments.Fiber Bragg Gratings (FBGs) are gaining acceptance as velocity/pressure gauges in the fields of detonation and shock physics on account of their sensitivity, small size, flexibility, electromagnetic immunity, and wavelength-encoded feature. Chirped FBGs (CFBGs) are investigated as wavelength-to-position discriminators with the purpose of monitoring pressure/velocity profiles over a distance range of typically 100 mm. The use of CFBGs simplifies both sensor deployment and data retrieval and finally improves the accuracy due to the increased number of measurement data. In this paper, the metrological performance of CFBGs used as in situ distributed shock pressure/velocity gauges is investigated both theoretically and experimentally in a planar shock loading configuration with an aluminum-based flyer and target. In the intermediate range for shock stress, i.e., less than the Hugoniot Elastic Limit (HEL) of silica, CFBGs provide simultaneous measurements of both shockwave velocity and stress within the target...

In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the influence of a constant magnetic field regime. It is observed that at low temperature and relatively strong applied magnetic fields, electromagnetic defective transmission spectra corresponding to the two decoupled right- and left-handed polarized modes possess a step-like transmission feature which is referred to as “quantum Hall defect modes” (QHD modes or QHDs) in this paper. Tunable growing transitional transmission steps for QHDs with increasing magnetic field intensity were shown to be possible. Observation of sensitive magneto-transmission oscillations to the thermal excitations in the last plateaus slowly ascending toward unity is another special feature noted in this work. The results of this study, which is carried out based on rapid standard calculations for the transfer matrix approach is supplied with commercial simulations marking the first PHE system, promise an proper candidate for new photonic applications, especially new tunable magneto-based lenses and photonic magneto-thermal sensors.In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the influence of a constant magnetic field regime. It is observed that at low temperature and relatively strong applied magnetic fields, electromagnetic defective transmission spectra corresponding to the two decoupled right- and left-handed polarized modes possess a step-like transmission feature which is referred to as “quantum Hall defect modes” (QHD modes or QHDs) in this paper. Tunable growing transitional transmission steps for QHDs with increasing magnetic field intensity were shown to be possible. Observation of sensitive magneto-transmission oscillations to the thermal excitations in the last plateaus slowly ascending toward unity is another special feature noted in this work. The results of this study, which is carried out based on rapid standard calculations for the transfer matrix approach is supplied...

An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence of the size of the quasi-reference electrode against the stability of the pH readings was investigated. Through optimizing the size of the integrated quasi-reference electrode, the all-solid-state ISHFET pH sensor can sustain stable pH measurements for aqueous solutions of micro-litre size. A sensitivity of 55 mV/pH was achieved by the pH sensor at room temperature. Thus, the device may have potential uses in biomedical applications which require small volume pH measurements.An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence of the size of the quasi-reference electrode against the stability of the pH readings was investigated. Through optimizing the size of the integrated quasi-reference electrode, the all-solid-state ISHFET pH sensor can sustain stable pH measurements for aqueous solutions of micro-litre size. A sensitivity of 55 mV/pH was achieved by the pH sensor at room temperature. Thus, the device may have potential uses in biomedical applications which require small volume pH measurements.

In this paper, we propose a demodulation method for refractive index (RI) sensing with tilted fiber Bragg gratings (TFBGs). It operates by monitoring the TFBG cladding mode resonance “cut-off wavelengths.” The idea of a “cut-off wavelength” and its determination method are introduced. The RI sensitivities of TFBGs are significantly enhanced in certain RI ranges by using our demodulation method. The temperature-induced cross sensitivity is eliminated. We also demonstrate a parallel-double-angle TFBG (PDTFBG), in which two individual TFBGs are inscribed in the fiber core in parallel using a femtosecond laser and a phase mask. The RI sensing range of the PDTFBG is significantly broader than that of a conventional single-angle TFBG. In addition, its RI sensitivity can reach 1023.1 nm/refractive index unit in the 1.4401–1.4570 RI range when our proposed demodulation method is used.In this paper, we propose a demodulation method for refractive index (RI) sensing with tilted fiber Bragg gratings (TFBGs). It operates by monitoring the TFBG cladding mode resonance “cut-off wavelengths.” The idea of a “cut-off wavelength” and its determination method are introduced. The RI sensitivities of TFBGs are significantly enhanced in certain RI ranges by using our demodulation method. The temperature-induced cross sensitivity is eliminated. We also demonstrate a parallel-double-angle TFBG (PDTFBG), in which two individual TFBGs are inscribed in the fiber core in parallel using a femtosecond laser and a phase mask. The RI sensing range of the PDTFBG is significantly broader than that of a conventional single-angle TFBG. In addition, its RI sensitivity can reach 1023.1 nm/refractive index unit in the 1.4401–1.4570 RI range when our proposed demodulation method is used.

Luminescence imaging is currently being used to provide spatially resolved defect in high volume silicon solar cell production. One option to obtain the high throughput required for on the fly detection is the use a silicon line scan cameras. However, when using a silicon based camera, the spatial resolution is reduced as a result of the weakly absorbed light scattering within the camera's chip. This paper address this issue by applying deconvolution from a measured point spread function. This paper extends the methods for determining the point spread function of a silicon area camera to a line scan camera with charge transfer. The improvement in resolution is quantified in the Fourier domain and in spatial domain on an image of a multicrystalline silicon brick. It is found that light spreading beyond the active sensor area is significant in line scan sensors, but can be corrected for through normalization of the point spread function. The application of this method improves the raw data, allowing effecti...

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as “selective silicon ablation” is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as “selective silicon ablation” is proposed which ...

In this paper, we proposed a novel nano-gap thermophotovoltaic (TPV) device made up of thin-films including the radiator. The optical, electrical, and thermal responses and performance of the device were assessed using coupled opto-electro-thermal numerical simulation. The device design consists of a thin-film tungsten radiator which is paired with a thin-film silicon TPV cell across a nanometric vacuum gap. Results were simulated based on experimental properties available in the current literature database. It is discovered that the maximum electrical power output of the thin-film nano-gap TPV device increases with cell temperature up to a certain threshold value due to improvements in generated photocurrent. Thin-film tungsten as a radiator is shown to improve radiative heat transfer above the bandgap compared to conventional bulk tungsten. The effect of cell thickness on responses and performance was also analysed. A 1-μm cell produces better performance over thinner thicknesses at the cost of greater cooling requirements. However, the improvements in output power offset the cooling costs, allowing for consistently favourable efficiencies. Finally, it is shown that the temperature profile in silicon thin-films under convective cooling can be approximated as uniform, simplifying the heat transport modelling process.In this paper, we proposed a novel nano-gap thermophotovoltaic (TPV) device made up of thin-films including the radiator. The optical, electrical, and thermal responses and performance of the device were assessed using coupled opto-electro-thermal numerical simulation. The device design consists of a thin-film tungsten radiator which is paired with a thin-film silicon TPV cell across a nanometric vacuum gap. Results were simulated based on experimental properties available in the current literature database. It is discovered that the maximum electrical power output of the thin-film nano-gap TPV device increases with cell temperature up to a certain threshold value due to improvements in generated photocurrent. Thin-film tungsten as a radiator is shown to improve radiative heat transfer above the bandgap compared to conventional bulk tungsten. The effect of cell thickness on responses and performance was also analysed. A 1-μm cell produces better performance over thinner thicknesses at the cost of greater ...

Depending on the frequency, waves can either propagate (transmission band) or be attenuated (attenuation band) while travelling through a one-dimensional spring-mass chain with internal resonators. The literature on wave propagation through a 1D mass-in-mass chain is vast and continues to proliferate because of its versatile applicability in condensed matter physics, optics, chemistry, acoustics, and mechanics. However, in all these areas, a uniformly periodic arrangement of identical linear resonating units is normally used which limits the attenuation band to a narrow frequency range. To counter this limitation of linear uniformly periodic metamaterials, the attenuation bandwidth in a one-dimensional finite chain with frequency graded linear internal resonators are investigated in this paper. The result shows that a properly tuned frequency graded arrangement of resonating units can extend the upper part of the attenuation band of 1D metamaterial theoretically up to infinity and also increases the lower part of the attenuation bandwidth by around 40% of an equivalent uniformly periodic metamaterial without increasing the mass. Therefore, the frequency graded metamaterials can be a potential solution towards low frequency and wideband acoustic or vibration insulation. In addition, this paper provides analytical expressions for the attenuation and transmission frequency limits for a periodic mass-in-mass metamaterial and demonstrates the attenuation band is generated by the high absolute value of the effective mass not only due to the negative effective mass.

This paper presents a method of measuring the temperature of water near a 1-mm-diameter magnetic sphere under induction heating. The method is based on the temperature dependence of the absorption coefficient of water at a wavelength of 1150 nm. In this study, two-dimensional images of the absorbance, which is the transverse projection of the absorption coefficient of water, were acquired by a near-infrared camera through a telecentric lens, and three-dimensional radial profiles of the temperature were then generated by applying inverse Abel transforms (IATs) to the absorbance profiles. To ensure the spherical symmetry of the temperature and the parallelity of the light rays, which are the conditions necessary to apply an IAT, the onset of free convection and the angles of deflection were evaluated. This paper also presents a method of estimating the heat generation rate in a sphere by fitting the numerical solutions of the thermal conduction equation to the measured temperatures. The temperatures and hea...

Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, for 3D vertical transistors in which both the channel and gate are polysilicon, the case of silicon-based electrodes cannot be ignored. In this paper, we report the fabrication of various ferroelectric capacitors with silicon (S) based conductive layers and titanium nitride metal (M) electrodes using aluminum doped hafnium oxide (I). The ferroelectric device with silicon-based electrodes shows superior polarization and steeper switching. These results pave the way toward 3D integration for potential 3D NAND replacement.

Fano resonances usually arise when a narrow resonance or discrete state and a broad resonance or continuum state are coupled. In this paper, we theoretically and numerically study asymmetric Fano line shape realized in a photonic crystal nanobeam (PCN) side-coupled with a photonic crystal nanobeam cavity (PCNC). Asymmetric transmission profiles with a transmission peak and a transmission valley are obtained for a low index concentrated cavity mode. The transmission valley, associated with the destructive interference, of our PCN-PCNC structures is deeper than that of a waveguide or Fabry-Perot resonator side-coupled with a PCNC structure. Through changing the position of the photonic band gap (PBG) of the PCN, we can utilize the high or low frequency band edge modes and the Fano transmission profiles can be further controlled. The transmission spectra of our PCN-PCNC structures can be well fitted by the Fano resonance formula and agree qualitatively with the prediction made by the temporal coupled mode theory. By using the band edge modes of the PCN as the continuum state instead of a usual broad resonance, we have demonstrated a new way to generate a prominent Fano resonance. Our PCN-PCNC structures are compact and feasible to achieve large-scale high-performance integrated photonic devices, such as optical modulators or switches.Fano resonances usually arise when a narrow resonance or discrete state and a broad resonance or continuum state are coupled. In this paper, we theoretically and numerically study asymmetric Fano line shape realized in a photonic crystal nanobeam (PCN) side-coupled with a photonic crystal nanobeam cavity (PCNC). Asymmetric transmission profiles with a transmission peak and a transmission valley are obtained for a low index concentrated cavity mode. The transmission valley, associated with the destructive interference, of our PCN-PCNC structures is deeper than that of a waveguide or Fabry-Perot resonator side-coupled with a PCNC structure. Through changing the position of the photonic band gap (PBG) of the PCN, we can utilize the high or low frequency band edge modes and the Fano transmission profiles can be further controlled. The transmission spectra of our PCN-PCNC structures can be well fitted by the Fano resonance formula and agree qualitatively with the prediction made by the temporal coupled mode th...

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobi...

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

Gaseous detectors are widely used in high energy physics, and are attractive choices in tracking systems for cosmic muon imaging, also called muography. Such detectors offer high resolution and high efficiency at reasonable cost for large sizes, however, one of the drawbacks is that the gaseous detection medium must be prevented from contamination by outside air or internal outgassing. Standard systems work with a constant gas flow, leading to regular maintenance in the form of gas cylinder changes, which can be an issue for remote field applications. In this paper we discuss the practical possibilities to reduce gas consumption of an outdoor gaseous tracker, where particularly the gas density change from daily temperature cycling limits the input flow. Such "breathing" effect can be circumvented by well designed buffer volume, which must prevent external air contamination. A realistic MWPC tracking test system with 0.9 square meter area, total volume of 160 l, has been operated for 36 days with a flow of 3 l/day, confirming that the buffer volume, in this case a 50 m long and 10 l volume low diffusion tube, ensures sufficient gas quality. The key effects governing the gas flow dynamics, including diffusion and gas volume change, has been studied quantitatively, leading to practical design prescriptions., Comment: 20 pages, 12 figures. The following article has been submitted to Journal of Applied Physics under Manuscript #JAP21-AR-01969

Investigation of the polarization switching mechanism in ferroelectric hafnium zirconium oxide (HZO) film is of great importance for developing high-quality ferroelectric memory devices. Recently, several works have been reported to describe the switching process of polycrystalline HZO film using the inhomogeneous field mechanism (IFM) model. However, no report has recorded the effect of high pressure annealing (HPA) on the polarization switching process. In this paper, we have carried out a careful investigation on the switching properties of HZO capacitors annealed at 600 °C with various high pressure conditions (1, 50, and 200 atm) using the IFM model. As pressure increases to 200 atm, the ferroelectric properties were enhanced in the HZO films, and, as a result, highest remanent polarization (Pr of 24.5 μC/cm2) was observed when compared with 1 and 50 atm. Similarly, as HPA increases, the HZO capacitors showed a decrement of the coercive field, which significantly improved the switching properties. The time consumed for reversing 80% polarization was 113.1, 105.7, and 66.5 ns for the sample annealed at 1, 50, and 200 atm, respectively. From the IFM model, the smallest active field (2.997 MV/cm) and a uniform distribution of the local electric field (0.304) were observed at 200 atm. Furthermore, the characteristic time constant ( τ 0 ) showed a decreasing trend (34.7, 18.1, and 11.7 ps) with increasing HPA. The improved switching properties and detailed findings recorded in this study may be helpful for developing the ferroelectric hafnia based non-volatile memory applications.

Dynamic control of probe absorption spectrum via vortex beams in multilevel systems has attracted much attention because it provides an avenue to observe unique transport properties. In this paper, we employ experimentally accessible parameters to flexibly control the probe absorption spectrum that shows vortex-induced transparency (VIT) and absorption (VIA) phenomena. Specifically, this system can be served as an optical switch while the vortex beams can act as the control knob, which has the ability to switch from a transparency dip to an absorption peak. Differing from a conventional electromagnetically induced transparency technique, our proposed scheme investigates VIT and VIA by tuning the orbital angular momentum of vortex beams in the resonance and non-resonance cases. Moreover, the collective feature caused by constructive or destructive interference is also studied via adjustable frequency detuning. Our results may provide an efficient approach to study similar phenomena in multilevel quantum systems driven by optical vortex beams.

In this paper, a refractive index (RI) sensor with superconducting photonic crystal in the terahertz regime is theoretically analyzed by the transfer matrix method. An asymmetric resonance cavity containing gradient thicknesses of the superconducting layer is employed to suppress the resonance absorption linewidth. We present the coupled wave theoretical model to give an optimization scheme for excellent sensing performance. The proposed sensing models can achieve an excellent single resonant peak when the temperature is over 80 K. When the incident angle varies between 50° and 70° in TE mode, the shift of a single resonant peak has a linear relationship with the incident angle. The simulation results report that the sensitivity and figure of merit in the optimal model can reach over 22.2 μm RIU−1 (RIU represents RI unit) and 265 at the ultralow temperature (85 K), respectively. Its performance indicators are dozens of times those of the traditional photonic crystal RI sensor. Our study provides theoretical guidance for the design of a low-temperature RI sensor with a high-performance indicator.

This paper addresses the application of multimodal nonlinear optical (MNLO) microscopy to clinical research within the context of label-free non-invasive molecular imaging. Here, a compact MNLO microscope based on a laser scanning microscope, a femtosecond laser, a time-correlated single-photon counting system, and a photonic crystal fiber are introduced for biomedical applications. By integrating two-photon fluorescence, two-photon fluorescence lifetime imaging, second-harmonic generation, and coherent anti-Stokes Raman scattering microscopy, the proposed scheme provides profound insights into the physicochemical properties related to 3D molecular orientation distribution, inter- and intra-molecular interactions, and disease progression in biological systems and organs. The high peak power and the low average intensity of near-infrared laser pulses allow for deep-penetration imaging without compromising sample vitality. Linking nonlinear optical phenomena with time/spectral/polarization-resolved imaging also makes it possible to obtain multidimensional information to address complex biomedical questions.

Two-dimensional (2D) GaS, GaSe, and InSe were reported to be semiconductors and have been recently fabricated with potential applications in photoelectrics, where in-depth understanding from electronic structure is necessary. In addition, the thermal transport properties play a key role as to the thermal stability and the efficient heat dissipation for device operation, which are also necessary to be addressed. In this paper, we present a systematic first-principles study on the electronic, optical, and thermal transport properties for the representative group III–VI monolayer GaS, GaSe, and InSe. Our results indicate that monolayer GaS, GaSe, and InSe are semiconductors with an indirect bandgap. The predominant influence of interband transitions due to the large bandgap causes monolayer GaSe to possess the highest absorptivity along both “in-plane” and “out-of-plane” directions compared to the other two systems. Moreover, the lattice thermal conductivities (κL) of these materials are found to be inversely proportional to their average atomic mass, but the decrease in thermal conductivity from GaS to GaSe is negligible in comparison to that of GaSe to InSe with a nearly equivalent mass difference. It is found that the underlying mechanism lies in the larger phonon relaxation time of GaSe caused by weaker anharmonicity. Our study provides a comprehensive understanding of the inherent physical properties of monolayer GaS, GaSe, and InSe, which would benefit their future applications in photoelectrics.

The use of stibnite (Sb2S3) as a light-harvesting material in thin film solar cells has received considerable research interest during the transition of the millennium. However, the use of perovskite diminished the research in the field, and the potential of antimony Chalcogenides [Sb2(S,Se)3] was not explored thoroughly. Although these materials also provide bandgap tuning like perovskite, by varying the composition of S and Se, it is not as popular as perovskite for the fabrication of solar cells mainly because of the low efficiency of the solar cells based on it. In this paper, we present a landscape of the functional role of various device parameters on the performance of Sb2(S,Se)3-based solar cells. For this purpose, we first calibrate the optoelectronic model used for simulation with the experimental results from the literature. The model is then subjected to parametric variations to explore the performance metrics for this class of solar cells. Our results show that despite the belief that the open circuit voltage is independent of contact layers’ doping in proper band-aligned carrier selective thin film solar cells, here we observe otherwise and the open circuit voltage is indeed dependent on the doping density of the contact layers. Using the detailed numerical simulation and analytical model, we further identify the performance optimization route for Sb2(S,Se)3-based thin film solar cells.

As the grating-based phase contrast imaging has drawn much attention in various scientific fields, there is an increasing demand for a compact imaging system with high efficiency in practical applications. In this paper, a compact imaging configuration by replacing the source grating in a conventional imaging system with a robust, easily-fabricated, and cost-effective x-ray polycapillary lens is proposed and its feasibility is examined using a full-scale Monte Carlo simulation. A typical x-ray spectrum for diagnostic mammography is adopted in the simulation. Under this spectrum, a new polycapillary lens is designed and optimized to meet the requirement of the imaging system. The phantom consists of polyethylene, cortical bone, and adipose tissue spheres of different sizes. An accurate phase image of the phantom is successfully reconstructed using an eight-step phase-stepping method. Excellent agreement of the phase shift and attenuation of the phantom is obtained between the simulation and the theoretical prediction. Compared with a conventional imaging system using a source grating at the same parameters, the imaging efficiency of our proposed system is improved 1.7 times, while its background visibility is reduced from 44.4 % to 12.4 %. Our results suggest the possibility of developing such a bench-top system for flexible phase contrast imaging applications.

A model for ultracapacitor capacitance and ion screening length based on semiconductor physics is presented in this paper. Screening length is related to capacitance as the plate-plate separation in a double-layer, and thus both are related to dissolved ion density in the electrolyte. Furthermore, this dissolved ion density can be expressed in terms of an effective bandgap assigned to the electrolyte/solvent pair. Therefore, by knowing the effective bandgap, we can explain the published experimental measurements of the dependence of capacitance and screening length on temperature. For electrolytes commonly used in ultracapacitor applications, the effective bandgap is estimated to be on the order of a few 100 meV.

Although titanium dioxide ( TiO 2) is a promising constituent of the metasurface operative in the visible, the experimental demonstration is limited so far because TiO 2 is intrinsically chemically/physically stable and is hard to be processed into nanostructures with high precision. In this paper, we develop a facile pathway to fabricate the TiO 2 metasurface via oxidation of Ti nanoparticle array that can be made by the conventional lift-off process. Under an optimized heat-treatment procedure in air, Ti nanoparticles are converted to TiO 2 nanoparticles with a size expansion predictable by the molar volume mismatch between Ti and TiO 2, while the global periodic arrangement is retained. We apply this technique to a Ti nanoparticle array fabricated on the phosphor plate of yttrium aluminum garnet doped with Ce 3 + (YAG:Ce) and demonstrate the directional outcoupling of emission through the metasurface. The photoluminescence from the YAG:Ce plate is directionally enhanced in the forward direction, as large as three times as much compared to that from the flat YAG:Ce plate without the metasurface. Because of the high transparency and lossless feature of TiO 2 in the visible, the present metasurface does not lower the total quantum yield of the system consisting of the YAG:Ce plate and the TiO 2 metasurface, which is beneficial for the solid-state-lighting application.

SrTiO3 is a wide bandgap cubic perovskite oxide and displays many exotic properties, i.e., transparent conductivity, photocatalysis, metallicity, ferroelectricity, superconductivity, colossal magnetoresistance, two-dimensional electron gas, etc., due to the manipulations of defect chemistry and constituent elements via impurity doping. This paper reports on the intricacy of the structural and optoelectronic properties of the epitaxially stabilized 5 at. % Ta-doped SrTiO3 (001) thin films on LaAlO3 (001) substrates by systematically varying the growth temperature and oxygen partial pressure during the pulsed laser deposition process. The influences of Ta dopant and growth parameters on the epitaxial quality of these layers are understood by determining the dopant location and its concentration in the SrTiO3 lattice. The complex relationships of optical and electronic properties on growth parameters, dopant concentration, and single crystal quality of the films are demonstrated. The observed low resistivity (∼5 × 10−3 Ω cm) and high optical transparency (∼85%–90%) of optimized Ta-doped SrTiO3 films offer it as an exciting material for next generation transparent optoelectronics.

In this paper, a broadband metamaterial absorber with a fractional bandwidth of 126.88% was presented. The characteristic mode theory was used to guide the design of the absorber. According to the analysis of characteristic mode and characteristic current, the resistance value of resistive films can be determined. The different modal information obtained through parameter changes can also better guide the design of the absorber. To study its operation mechanism, the equivalent impedance and surface current distribution of the proposed absorber have been analyzed. The final simulation and measurement results show that the proposed absorber has a wide absorbing bandwidth which is from 3.21 to 14.35 GHz, and the absorptivity is greater than 90%, covering the S, C, X, and Ku bands. In addition, for TE and TM polarization, it can achieve an absorptivity of more than 85% at 45° oblique incident and has good angular stability. Hence, the absorber has great potential applications in the field of electromagnetic stealth technology and Radar Cross Section reduction.

This paper presents non-reciprocal information transfer between two mass-spring chains enabled using an electromechanical cell incorporating a metal–oxide–semiconductor field effect transistor (MOSFET). Mechanical information propagating through an input chain is converted into an electrical signal, and vice versa for an output chain, using a permanent magnet and a conducting coil in each chain. The conducting coils are coupled electrically via a MOSFET, leading to giant isolation and unidirectional signal transfer. We present theory, numerical simulations, and an experimental demonstration of the concept. The proposed system can be implemented as a “sonocoupler”, an acoustic analog of an optocoupler, which can isolate one mechanical system from another while transmitting information in a unidirectional manner.

Rapidly and accurately identifying tumor cells and blood cells is an important part of circulating tumor cell detection. Raman spectroscopy is a molecular vibrational spectroscopy technique that can provide fingerprint information about molecular vibrational and rotational energy levels. Deep learning is an advanced machine learning method that can be used to classify various data accurately. In this paper, the surface-enhanced Raman scattering spectra of blood cells and various tumor cells are measured with the silver film substrate. It is found that there are significant differences in nucleic acid-related characteristic peaks between most tumor cells and blood cells. These spectra are classified by the feature peak ratio method, principal component analysis combined with K-nearest neighbor, and residual network, which is a kind of deep learning algorithm. The results show that the ratio method and principal component analysis combined with the K-nearest neighbor method could only distinguish some tumor cells from blood cells. The residual network can quickly identify various tumor cells and blood cells with an accuracy of 100%, and there is no complex preprocessing for the surface-enhanced Raman scattering spectra. This study shows that the silver film surface-enhanced Raman scattering technology combined with deep learning algorithms can quickly and accurately identify blood cells and tumor cells, indicating an important reference value for the label-free detecting circulating tumor cells.

Discovery of new phosphors becomes an endless topic with great advances in light sources and emissive displays. Traditional trial-and-error methods are time-consuming and inefficient, and innovative approaches are, therefore, required for speeding up the materials discovery. In this paper, the single-particle-diagnosis approach, a novel materials screening method based on single crystal x-ray diffractometry and single-particle luminescence, will be introduced. The concept of this approach is first interpreted, followed by presenting the crystal structure and photoluminescence of newly discovered nitride phosphors. Finally, future perspectives of the single-particle-diagnosis approach are demonstrated.

Piezoelectric energy harvesting from ambient vibrations offers an environmentally friendly approach to powering distributed sensors for the Internet of Things. This paper gives a direct comparison of Pb(Zr,Ti)O3 (PZT)- and (K,Na)NbO3 (KNN)-based harvesters using a compliant mechanism harvester design for resonant frequencies of 20, 40, and 70 Hz. At 70 Hz, the measured power densities for PZT- and KNN-based devices are 1139 and 31 μW/mm3, respectively, for unimorph structures on nickel foils of 25 and 50 μm in thickness. The power density ratios scale proportionally to the material energy harvesting figures of merit. Energy harvesting with the compliant mechanism design is twice as efficient when compared to harvesting with a simple cantilever beam.

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

Vortex electromagnetic waves carrying orbital angular momentum (OAM) have been widely discussed for potential applications in wireless communications. Belonging to the Laguerre–Gaussian beams family, such type of waves present a hollow conical shape and divergence characteristics along with a directional radiation. In this paper, an innovative method to produce omnidirectional OAM beams based on spatial transformation is proposed at microwave frequencies. As a proof-of-concept demonstration, a lens with omnidirectional radiation in the horizontal plane is designed and simulated with an incident vortex beam carrying the OAM mode l = +2. The designed lens can be potentially implemented with an all-dielectric medium showing a gradient permittivity distribution. Furthermore, the proposed lens presents good performances over a wide operational bandwidth spanning from 8 to 17 GHz. By converting the directional beam to an omnidirectional one, the proposed method opens the door to the potential development of microwave vortex antenna systems.