Back to Search
Start Over
Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering
- Source :
- Hughes, Eamonn T; Shah, Rushabh D; & Mukherjee, Kunal. (2019). Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering. Journal of Applied Physics. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/1d28b1jf, Journal of Applied Physics, vol 125, iss 16, JOURNAL OF APPLIED PHYSICS, vol 125, iss 16
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation–dislocation and carrier–dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-ba...
- Subjects :
- 010302 applied physics
Materials science
business.industry
Scanning electron microscope
General Physics and Astronomy
Heterojunction
Cathodoluminescence
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Mathematical Sciences
Engineering
Lattice constant
Physical Sciences
0103 physical sciences
Optoelectronics
Dislocation
0210 nano-technology
business
Order of magnitude
Applied Physics
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 125
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....1b0ed2c4d939bb48c782d4d1bb1b7ce2