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Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure
- Source :
- Journal of Applied Physics. 126:095705
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- InGaN-based light-emitting diodes (LEDs) have higher luminescence efficiency than other materials used for the blue and green LEDs in spite of their relatively high dislocation density. Localization theory has been used to explain this phenomenon, but the direct observation of localization states in the InGaN active region has been rarely reported. In this paper, we propose an LED structure to obtain higher luminescence efficiency in the yellow-green LEDs and directly observe the transition of carriers between different localization states. The localization states were investigated and confirmed by temperature-dependent photoluminescence and excitation power-dependent photoluminescence. The value of the external quantum efficiency also exhibited a higher radiative efficiency of the quantum well with a higher degree of localization states. These results offer a promising means of realizing high-luminescence LEDs.InGaN-based light-emitting diodes (LEDs) have higher luminescence efficiency than other materials used for the blue and green LEDs in spite of their relatively high dislocation density. Localization theory has been used to explain this phenomenon, but the direct observation of localization states in the InGaN active region has been rarely reported. In this paper, we propose an LED structure to obtain higher luminescence efficiency in the yellow-green LEDs and directly observe the transition of carriers between different localization states. The localization states were investigated and confirmed by temperature-dependent photoluminescence and excitation power-dependent photoluminescence. The value of the external quantum efficiency also exhibited a higher radiative efficiency of the quantum well with a higher degree of localization states. These results offer a promising means of realizing high-luminescence LEDs.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
business.industry
General Physics and Astronomy
02 engineering and technology
Green-light
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Condensed Matter::Materials Science
law
0103 physical sciences
Optoelectronics
Quantum efficiency
0210 nano-technology
business
Luminescence
Quantum well
Excitation
Diode
Light-emitting diode
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 126
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........a813b9022d5c55596ce12ea24344c6e0