1. STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures
- Author
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I. Wlasny, Jacek M. Baranowski, Roman Stepniewski, Andrzej Wysmołek, Iwona Pasternak, Wlodek Strupinski, and Krzysztof Pakuła
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Graphene ,business.industry ,Scanning tunneling spectroscopy ,Wide-bandgap semiconductor ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,Laser ,01 natural sciences ,law.invention ,symbols.namesake ,law ,0103 physical sciences ,symbols ,Optoelectronics ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,Raman spectroscopy ,business - Abstract
We present the study of metalorganic vapor phase epitaxy hexagonal boron nitride (MOVPE-h-BN) and graphene/MOVPE-h-BN heterostructures under the illumination with monochromatic light. The process of illumination makes the modification visible by both the shifting of Raman lines and the emergence of local electric fields. These changes are related to the modification of the charge state of the deep defect centers and can be used to control other 2D materials within heterostructures. The scanning tunneling spectroscopy study of the graphene/MOVPE-h-BN heterostructure allowed us to observe the defect states associated with the h-BN and evaluate the effect of illumination on them as well as the electronic structure of graphene.
- Published
- 2019