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We present the study of metalorganic vapor phase epitaxy hexagonal boron nitride (MOVPE-h-BN) and graphene/MOVPE-h-BN heterostructures under the illumination with monochromatic light. The process of illumination makes the modification visible by both the shifting of Raman lines and the emergence of local electric fields. These changes are related to the modification of the charge state of the deep defect centers and can be used to control other 2D materials within heterostructures. The scanning tunneling spectroscopy study of the graphene/MOVPE-h-BN heterostructure allowed us to observe the defect states associated with the h-BN and evaluate the effect of illumination on them as well as the electronic structure of graphene.

In this report, we demonstrate the preparation method of a multi-layer stack with a pre-defined number of graphene layers, which was obtained using chemical vapor deposition graphene deposited on a copper substrate and subsequently transferred onto a poly(methyl methacrylate) (PMMA) substrate. The prepared multi-layer stack can also be transferred onto an arbitrary substrate and in the end, the polymer can be removed, which in consequence significantly increases the range of possible graphene applications. The multi-layer character was confirmed by optical transmittance measurements and Raman spectroscopy, whereas the microstructure of the multi-layer graphene stack was investigated using Scanning Electron Microscopy. The electrical properties in the function of the number of graphene layers were assessed with standard Hall Effect measurements. Finally, we showed the practical application of the multi-layer graphene stack as a saturable absorber of a mode-locked Er-doped fiber laser.

The idea of a raster pattern magnetoresistor made of thin films of III–V compounds and a metallic layer has been known for over fifty years. Based on this knowledge, we present the construction of a magnetoresistor made of combined graphene and metallic strip patterns. The presented device is implemented using a monolayer of graphene epitaxially grown on a semi-insulating substrate. A graphene strip pattern magnetoresistor gives a promising wide range of practical applications due to its very high sensitivity combined with the mono-atomic thickness of the sensitive layer, the simplicity of realization, and a very convenient principle of sensor operation assuming only the usage of two electrical terminals.

For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphene (theoretical thickness of 0.69 nm) grown on the silicon carbide substrate by the Chemical Vapor Deposition method. Furthermore, we show that with depth resolution as good as 0.2 nm/decade, both hydrogen coming from the intercalation process and organic contamination can be precisely localized. As expected, hydrogen was found at the interface between graphene and the SiC substrate, while organic contamination was accumulated on the surface of graphene and did not penetrate into it. Such a precise measurement may prove to be invaluable for further characterization of 2D materials.

In this report, we demonstrate a complete Hall effect element that is based on quasi-free-standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter αH

The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications.

Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 A–3.8 A. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H2 dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene.

A simple current‐voltage measurement technique using microbridge patterns is described as a fast method for the determination of the effective peak electron velocity in III‐V semiconducting materials. The method is tested for GaAs samples. Microbridge patterns with different geometries were investigated and the influence of ‘‘self‐heating’’ by power dissipation was examined. Some other potential sources of errors deteriorating the accuracy of measurements were determined.

Protection of Cu(111) surface by chemical vapor deposition graphene coating is investigated. The X-ray photoemission spectroscopy results do not reveal any signs of corrosion on graphene-coated Cu(111), and suggest perfect protection of copper surface against interaction with atmospheric gases. However, the scanning tunneling spectroscopy results show that cracks in the graphene sheet open up windows for nanoscale corrosion. We have shown also that such local corrosions are not only limited to the discontinuities but may also progresses underneath the graphene cover.

Graphene grown by chemical vapor deposition on 4H-SiC (0001) was studied using micro-Raman spectroscopy and atomic force microscopy (AFM). AFM revealed that the graphene structure grown on on-axis substrates has a stepped morphology. This is due to step bunching, which results from etching in hydrogen as well as from the process of graphene formation itself. It was shown by micro-Raman spectroscopy that the properties of graphene present on step edges and on terraces are quite different. Graphene on terraces is uniform with a relatively small thickness and strain fluctuations. On the other hand, graphene on step edges has a large thickness and strain variations occur. A careful analysis of micro-Raman spatial maps led us to the conclusion that the carrier concentration on step edge regions is lowered when compared with terrace regions.

Single postdielectric resonators operating on their quasi TE011 modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of ±5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5×106 to 6.4×106 S/m.

In this letter, the authors demonstrate large size m-plane GaN substrates grown by ammonothermal method. These substrates have excellent structural quality. The concentration of threading dislocation density is below 5×104 cm−2 and the full width at half maximum for the symmetrical and asymmetrical peaks equals 16 and 19 arc sec, respectively. Also good optical quality, the energy gap-related transition is clearly observed at room temperature in photoluminescence and contactless electroreflectance spectra. GaN epilayers deposited on these substrates exhibit intrinsic narrow exciton lines which are very sensitive to the optical selection rules typical for hexagonal symmetry, proving truly nonpolar character of the material.

We present graphene nanowires implemented as dispersion free self switched microwave diode detectors. The microwave properties of the detectors are investigated using vector corrected large signal measurements in order to determine the detector responsivity and noise equivalent power (NEP) as a function of frequency, input power, and device geometry. We identify two distinct conductance nonlinearities which generate detector responsivity: an edge effect nonlinearity near zero bias due to lateral gating of the nanowire structures, and a velocity saturation nonlinearity which generates current compression at high power levels. The scaling study shows that detector responsivity obeys an exponential scaling law with respect to nanowire width, and a peak responsivity (NEP) of 250 V/W (50 pW/ Hz) is observed in detectors of the smallest width. The results are promising as the devices exhibit responsivities which are comparable to state of the art self switched detectors in semiconductor technologies.