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Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC
- Source :
- Applied Physics Letters. 109:011904
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphene (theoretical thickness of 0.69 nm) grown on the silicon carbide substrate by the Chemical Vapor Deposition method. Furthermore, we show that with depth resolution as good as 0.2 nm/decade, both hydrogen coming from the intercalation process and organic contamination can be precisely localized. As expected, hydrogen was found at the interface between graphene and the SiC substrate, while organic contamination was accumulated on the surface of graphene and did not penetrate into it. Such a precise measurement may prove to be invaluable for further characterization of 2D materials.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Hydrogen
Graphene
Intercalation (chemistry)
Analytical technique
Graphene foam
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
chemistry.chemical_compound
chemistry
Chemical engineering
law
0103 physical sciences
Silicon carbide
010306 general physics
0210 nano-technology
Graphene nanoribbons
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 109
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........7122d67ae0f27016d2e81f3b1bcaeb5c