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Low-noise epitaxial graphene on SiC Hall effect element for commercial applications
- Source :
- Applied Physics Letters. 108:223504
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- In this report, we demonstrate a complete Hall effect element that is based on quasi-free-standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter αH
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Passivation
business.industry
Graphene
02 engineering and technology
Chemical vapor deposition
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
Noise (electronics)
law.invention
law
Hall effect
0103 physical sciences
Monolayer
Optoelectronics
Wafer
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 108
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3a8b8630ffec0b4a704ed4b7fb594338