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Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface
- Source :
- Applied Physics Letters. 100:261604
- Publication Year :
- 2012
- Publisher :
- AIP Publishing, 2012.
-
Abstract
- Graphene grown by chemical vapor deposition on 4H-SiC (0001) was studied using micro-Raman spectroscopy and atomic force microscopy (AFM). AFM revealed that the graphene structure grown on on-axis substrates has a stepped morphology. This is due to step bunching, which results from etching in hydrogen as well as from the process of graphene formation itself. It was shown by micro-Raman spectroscopy that the properties of graphene present on step edges and on terraces are quite different. Graphene on terraces is uniform with a relatively small thickness and strain fluctuations. On the other hand, graphene on step edges has a large thickness and strain variations occur. A careful analysis of micro-Raman spatial maps led us to the conclusion that the carrier concentration on step edge regions is lowered when compared with terrace regions.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 100
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........63b9a1f29fda17fb381cf72012d97594