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Reports on the microstructure, atomic density and electrical resistivity of reactively sputtered Ru-Si-O ternary films. Experimental procedures; Composition of the films; Microstructure and crystallization; Density; Resistivity; Stability; Discussion; Conclusion; Outlook.

Presents a study that examined M-silicon-nitrogen and M-silicon (M=molybdenum, tantalum, or tungsten) thin films, reactively sputtered from M[sub5]Si[sub3] and WSi[sub2] targets as diffusion barriers for aluminum metallizations of silicon. Details on methods of analysis; Deposition conditions, composition, resistivity and highest stability temperature for diode tests; Compositions and resistivities of the evaluated binary barriers.

Presents a study that investigated the reaction of tantalum thin film with single crystalline (001) β-silicon carbide. Experimental procedures for the preparation of silicon substrate; X-ray diffraction spectra of the samples before and after annealing; Comparisons of transition metal-silicon carbide reactions.

Presents a study which investigated the platinum/germanium/gold layers of various platinum:germanium compositions, overlaid with a tantalum-silicon-nitrogen barrier layer and a gold metallization layer as ohmic contacts to n-type gallium arsenide. Contact resistivity of the sample; Characteristics of the contacts; Thermal stability of the contact.

Presents information on a study that investigated the metallurgical interactions of thin rhenium films in contact with single-crystal β-silicon carbide in a temperature range from 700 to 1100 degrees centigrade for durations of 30 minutes. Methodology of the study; Results and discussion on the study.

Presents a study that investigated tantalum-based diffusion barriers in silicon/copper VLSI metallizations. Experimental procedures; Results and discussion; Conclusion.

Presents a study that investigated reactively sputtered tungsten nitride layers as diffusion barriers between aluminum overlayers and silicon shallow n[sup+]-p junctions. Roles of tungsten-based barrier materials in contact metallurgy; Percentage of diode failures as a function of annealing temperature for the barriers.

Examines the epitaxial growth of gallium arsenide films by solid-phase transport. Annealing of substrates with silver film at 550 degree Celsius; Cap layer used to minimize arsenic loss; Use of cross-sectional transmission electron microscopy.

Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in /In2O3/Al and /TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+-p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in /In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a /TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment. [ABSTRACT FROM AUTHOR]

Two ternary films about 100 nm thick, Ti[sub 34] Si[sub 23] N[sub 43] (b3) and Ti[sub 35] Si[sub 13] N[sub 52] (c3), are synthesized by reactively sputtering a Ti[sub 5] Si[sub 3] or a Ti[sub 3] Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n[sup +] p junction diode and a Cu overlayer, this material is effective up to 700 °C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850 °C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance. [ABSTRACT FROM AUTHOR]

The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with /TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600 °C. [ABSTRACT FROM AUTHOR]

Presents information on a study which examined the oxidation behavior of reactively radio-frequency sputtered amorphous tantalum silicon nitrogen films for dry and wet oxidation. Methods; Results; Discussion.

Presents a study that investigated the oxidation behavior of reactively sputtered amorphous tungsten nitride thin films. Properties of tungsten nitride thin films; Details on the experimental procedures; Discussion on the results of the study.

The four-gate silicon-on-insulator transistor (G4 -FET) combines MOS and JFET actions in a single transistor to control the drain current. The various operation modes of the G4-FET are analyzed based on the measured current-voltage, transconductance and threshold characteristics. The main parameters (threshold voltage, swing, mobility) are extracted and shown to be optimized for particular combinations of gate biasing. Numerical simulations are used to clarify the role of volume or interface conduction mechanisms. Besides excellent performance (such as subthreshold swing and transconductance) and unchallenged flexibility, the new device has the unique feature to allow independent switching by its four separate gates, which inspires many innovative applications. [ABSTRACT FROM AUTHOR]

The operation and degradation mechanisms in silicon on insulator LD-MOSFETs are governed by the series resistance which is back-gate bias dependent. The influence of the back-gate bias during degradation and subsequent testing is investigated and modeled. The damage formation and overall loss in LD-MOSFETs performance induced by irradiation, hot-carrier injection, or low temperature are complex and remarkably different from the more usual case of low-voltage CMOS transistors. The series resistance can change by a factor of 4 according to the back-gate bias and radiation dose. The degradation processes are clearly identified and the main parameters (oxide charges, traps at the front and back interfaces, series resistances) are extracted using a simple model of the LD-MOSFET, which accounts for the modification of the drift region resistance. [Copyright &y& Elsevier]