WxN1-x alloys as diffusion barriers between Al and Si.

Authors :: So, F. C. T.
Kolawa, E.
Zhao, X.-A.
Pan, E. T-S.
Nicolet, M.-A.
Source :: Journal of Applied Physics. 9/1/1988, Vol. 64 Issue 5, p2787. 3p. 3 Graphs.
Publication Year :: 1988
Abstract: Presents a study that investigated reactively sputtered tungsten nitride layers as diffusion barriers between aluminum overlayers and silicon shallow n[sup+]-p junctions. Roles of tungsten-based barrier materials in contact metallurgy; Percentage of diode failures as a function of annealing temperature for the barriers.