Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations.

Presents a study that examined M-silicon-nitrogen and M-silicon (M=molybdenum, tantalum, or tungsten) thin films, reactively sputtered from M[sub5]Si[sub3] and WSi[sub2] targets as diffusion barriers for aluminum metallizations of silicon. Details on methods of analysis; Deposition conditions, composition, resistivity and highest stability temperature for diode tests; Compositions and resistivities of the evaluated binary barriers.