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Tantalum-based diffusion barriers in Si/Cu VLSI metallizations.

Authors :
Kolawa, E.
Chen, J. S.
Reid, J. S.
Pokela, P. J.
Nicolet, M.-A.
Source :
Journal of Applied Physics. 8/1/1991, Vol. 70 Issue 3, p1369. 5p. 2 Diagrams, 7 Graphs.
Publication Year :
1991

Abstract

Presents a study that investigated tantalum-based diffusion barriers in silicon/copper VLSI metallizations. Experimental procedures; Results and discussion; Conclusion.

Subjects

Subjects :
*TANTALUM
*DIFFUSION
*SILICON
*COPPER

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7641742
Full Text :
https://doi.org/10.1063/1.349594
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