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First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer, in preparation for future NUMEN experimental campaigns. First characterizations of sensors from two wafers obtained with epitaxial silicon carbide growth and with different doping concentration are presented. Current (I-V) and capacitance (C-V) characteristics are investigated in order to determine the full depletion voltage and the doping profile. Radioactive {\alpha}-sources are used to measure the energy resolution and estimate the depletion depth.

The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.

Neutrinoless double beta decay (0v\b{eta}\b{eta}) is considered the best potential resource to access the absolute neutrino mass scale. Moreover, if observed, it will signal that neutrinos are their own anti-particles (Majorana particles). Presently, this physics case is one of the most important research "beyond Standard Model" and might guide the way towards a Grand Unified Theory of fundamental interactions. Since the 0v\b{eta}\b{eta} decay process involves nuclei, its analysis necessarily implies nuclear structure issues. In the NURE project, supported by a Starting Grant of the European Research Council (ERC), nuclear reactions of double charge-exchange (DCE) are used as a tool to extract information on the 0v\b{eta}\b{eta} Nuclear Matrix Elements. In DCE reactions and \b{eta}\b{eta} decay indeed the initial and final nuclear states are the same and the transition operators have similar structure. Thus the measurement of the DCE absolute cross-sections can give crucial information on \b{eta}\b{eta} matrix elements. In a wider view, the NUMEN international collaboration plans a major upgrade of the INFN-LNS facilities in the next years in order to increase the experimental production of nuclei of at least two orders of magnitude, thus making feasible a systematic study of all the cases of interest as candidates for 0v\b{eta}\b{eta}.

Neutrinoless double beta decay (0{\nu}\b{eta}\b{eta}) is considered the best potential resource to determine the absolute neutrino mass scale. Moreover, if observed, it will signal that the total lepton number is not conserved and neutrinos are their own anti-particles. Presently, this physics case is one of the most important research beyond Standard Model and might guide the way towards a Grand Unified Theory of fundamental interactions. Since the \b{eta}\b{eta} decay process involves nuclei, its analysis necessarily implies nuclear structure issues. The 0{\nu}\b{eta}\b{eta} decay rate can be expressed as a product of independent factors: the phase-space factors, the nuclear matrix elements (NME) and a function of the masses of the neutrino species. Thus the knowledge of the NME can give information on the neutrino mass scale, if the 0{\nu}\b{eta}\b{eta} decay rate is measured. In the NURE project, supported by a Starting Grant of the European Research Council, nuclear reactions of double charge-exchange (DCE) will be used as a tool to extract information on the \b{eta}\b{eta} NME. In DCE reactions and \b{eta}\b{eta} decay, the initial and final nuclear states are the same and the transition operators have similar structure. Thus the measurement of the DCE absolute crosssections can give crucial information on \b{eta}\b{eta} matrix elements., Comment: arXiv admin note: substantial text overlap with arXiv:2001.09657; text overlap with arXiv:2001.09648

We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of our numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom kinetics depend critically on process-related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. We demonstrate that quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples.

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In the present lecture, we discuss the use of a buffer layer between the epitaxial layer and the substrate in order to reduce the defectiveness and improve the overall quality of the SiC epi-film. In particular, we find that the morphology and the quality of the epi-film depends on the carbonization temperature and the concentration of Ge in close proximity of the Si1-xGex/SiC interface. Ge segregation at the interface influences the film quality, and in particular a [Ge]>12% in close proximity to the interface leads to the formation of poly-crystalls, while close to 10% induces a mirror like morphology. Moreover, by finely tuning the Ge concentration and carbonization temperature, crystal quality higher than that observed for SiC grown on bare silicon is achieved., Comment: 15 pages, 6 figures

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current mapping of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering., Comment: 20 pages, 7 figures

The article describes the main achievements of the NUMEN project together with an updated and detailed overview of the related R&D activities and theoretical developments. NUMEN proposes an innovative technique to access the nuclear matrix elements entering the expression of the lifetime of the double beta decay by cross section measurements of heavy-ion induced Double Charge Exchange (DCE) reactions. Despite the two processes, namely neutrinoless double beta decay and DCE reactions, are triggered by the weak and strong interaction respectively, important analogies are suggested. The basic point is the coincidence of the initial and final state many-body wave-functions in the two types of processes and the formal similarity of the transition operators. First experimental results obtained at the INFN-LNS laboratory for the 40Ca(18O,18Ne)40Ar reaction at 270 MeV, give encouraging indication on the capability of the proposed technique to access relevant quantitative information. The two major aspects for this project are the K800 Superconducting Cyclotron and MAGNEX spectrometer. The former is used for the acceleration of the required high resolution and low emittance heavy ion beams and the latter is the large acceptance magnetic spectrometer for the detection of the ejectiles. The use of the high-order trajectory reconstruction technique, implemented in MAGNEX, allows to reach the experimental resolution and sensitivity required for the accurate measurement of the DCE cross sections at forward angles. However, the tiny values of such cross sections and the resolution requirements demand beam intensities much larger than manageable with the present facility. The on-going upgrade of the INFN-LNS facilities in this perspective is part of the NUMEN project and will be discussed in the article.

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide., Comment: 5 pages, 4 figures