28 results on '"Zhao, Sheng Lei"'
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2. Design and simulation of AlN-based vertical Schottky barrier diodes*
3. Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height*
4. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
5. Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers
6. Analysis of the Breakdown Characterization Method in GaN-Based HEMTs
7. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
8. Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors
9. Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
10. Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm
11. Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors
12. Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm
13. Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
14. Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
15. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
16. Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
17. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
18. Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
19. Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress
20. Trap States in Al 2 O 3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis
21. AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient
22. Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
23. Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
24. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
25. Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
26. Investigation of trap states in Al2O3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors.
27. Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm.
28. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment.
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