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Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm
- Source :
- Chinese Physics Letters. 32:117202
- Publication Year :
- 2015
- Publisher :
- IOP Publishing, 2015.
-
Abstract
- We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/Vs, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm−2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm−2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........bd66712c3a0b0e01c2666883f5e8662e