Cite
Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm
MLA
Zhang Jin-Cheng, et al. “Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/Mm.” Chinese Physics Letters, vol. 32, Nov. 2015, p. 117202. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bd66712c3a0b0e01c2666883f5e8662e&authtype=sso&custid=ns315887.
APA
Zhang Jin-Cheng, Zhang Weihang, Jiang Hai-Qing, Zhao Sheng-Lei, He Yunlong, Zou Yu, Jiang Ren-Yuan, LI Xiang-Dong, Hao Yue, & Guo Zhen-Xing. (2015). Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm. Chinese Physics Letters, 32, 117202.
Chicago
Zhang Jin-Cheng, Zhang Weihang, Jiang Hai-Qing, Zhao Sheng-Lei, He Yunlong, Zou Yu, Jiang Ren-Yuan, LI Xiang-Dong, Hao Yue, and Guo Zhen-Xing. 2015. “Al 0.30 Ga 0.70 N/GaN/Al 0.07 Ga 0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/Mm.” Chinese Physics Letters 32 (November): 117202. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bd66712c3a0b0e01c2666883f5e8662e&authtype=sso&custid=ns315887.