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The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated. The experiment results show that, after the same high electron irradiation dose, the 2DEG mobility and density in InP-based HEMT structures with strain InxGa1-xAs (x＞0.53) channel decrease more dramatically than that without strain In0.53Ga0.47As channel. Moreover, the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the InxGa1-x As channel. The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs. [ABSTRACT FROM AUTHOR]

Introduction: Emerging evidence has illustrated that Collagen triple helix repeat containing 1 (CTHRC1) is crucial for tumorigenesis and development. However, the effects of CTHRC1 on bladder cancer progression remain largely unclear. Here, we aim to investigate the function and mechanism of CTHRC1 in behaviors of bladder cancer cells in vitro and in vivo.Material and Methods: Interference assays were applied to determine the biological functions of CTHRC1. The expression of CTHRC1 was examined by quantitative real time-PCR (qRT-PCR), Western blot and immunohistochemical (IHC) analysis. Effects of CTHRC1 on proliferation, migration and invasion were evaluated by CCK-8, colony formation, flow cytometry, EdU staining, wound healing, transwell and western blot assays. Bladder cancer cells transfected with sh-CTHRC1 were injected into nude mice to explore the effect of CTHRC1 on tumorigenesis in vivo.Results: CTHRC1 expression was increased in bladder cancer tissues and cell lines compared with normal controls, and associated with advanced clinical stage and lymph node metastasis. Also, patients with high levels of CTHRC1 expression were found to have a poor prognosis. Knockdown of CTHRC1 alleviated bladder cancer cell proliferation, migration and invasion in vitro and impeded tumorigenesis in vivo. Moreover, mechanistic investigation indicated that CTHRC1 could regulate the PI3K/Akt signaling pathway.Conclusions: Our data demonstrated that CTHRC1 played an oncogenic role in bladder cancer by modulating the PI3K/Akt signaling pathway, which sheds novel light on diagnosis and treatment of bladder cancer. [ABSTRACT FROM AUTHOR]

A study was done on the rates of spontaneous exchange of sterols between lipid vesicles. It was shown that sterols which are more hydrophilic than cholesterol show faster exchange rates compared to cholesterol. Those which are more hydrophobic have slower exchange rates. These findings indicate that the sterol-phospholipid interactions determine the rate of sterol exhange in lipid vesicles.

Abstract: (111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3)3–Si(CH3)3, HMDS) without H2. The effects of laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the microstructure, carbon formation and deposition rate (Rdep) were investigated. β‐SiC films with carbon formation and graphite films were prepared at PL ≥ 170 W and Pto ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at Ptot = 400‐800 Pa and PL = 130‐170 W. The maximum Rdep was about 50 μm·h−1 at PL = 170 W, Ptot = 600 Pa and Tdep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. [ABSTRACT FROM AUTHOR]

Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (Tin), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing Tin. The surface showed a layer-by-layer microstructure with voids above Tin ⩾ 773 K, and then transformed into mosaic structure without voids at Tin= 298 K. The mechanism of the elimination of voids was discussed. At Tin =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids. [ABSTRACT FROM AUTHOR]

3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane ( HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared at deposition temperature ( Tdep) of 1423-1523 K, whereas the 3C-SiC (111) epitaxial films were obtained at 1573-1648 K with the thickness of 5.40 to 9.32 μm. The in-plane relationship was 3C-SiC [-1-12]//Si [001] and 3C-SiC [-110]//Si [-110]. The deposition rates ( Rdep) were 16.2-28.0 μm/h, which are 2 to 100 times higher than that of 3C-SiC (111) epi-grown on Si (111) by conventional CVD. The growth mechanism of 3C-SiC (111) epitaxial films has also been proposed. [ABSTRACT FROM AUTHOR]

Abstract: (111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3)3–Si(CH3)3, HMDS) without H2. The effects of laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the microstructure, carbon formation and deposition rate (Rdep) were investigated. β‐SiC films with carbon formation and graphite films were prepared at PL ≥ 170 W and Pto ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at Ptot = 400‐800 Pa and PL = 130‐170 W. The maximum Rdep was about 50 μm·h−1 at PL = 170 W, Ptot = 600 Pa and Tdep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. [ABSTRACT FROM AUTHOR]

Background: To explore the clinical correlation between serum YKL-40 protein level and recurrence of non-muscle invasive bladder cancer (NMIBC)., Methods: Totally 76 NMIBC patients (including 34 patients with confirmed recurrence and 42 patients without recurrence during the 2-year post-operative follow-up) and 31 healthy volunteers were recruited in this study. Blood samples were collected early in the morning, and serum YKL-40 protein levels of all these patients were analysed by using enzyme-linked immunosorbent assay (ELISA)., Results: Serum YKL-40 protein levels were significantly higher in NMIBC patients than in healthy controls (P<0.001). Meanwhile, serum YKL-40 protein levels were found to be significantly higher in patients with recurrent NMIBC than those without tumor recurrence (P=0.001)., Conclusions: Serum YKL-40 protein can be a reliable molecular marker for the clinical diagnosis of NMIBC recurrence. In particular, it can inform the post-operative management.