Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2.

Abstract: (111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH₃)₃–Si(CH₃)₃, HMDS) without H₂. The effects of laser power (<italic>P</italic>_L), total pressure (<italic>P</italic>_tot) and deposition temperature (<italic>T</italic>_dep) on the microstructure, carbon formation and deposition rate (<italic>R</italic>_dep) were investigated. β‐SiC films with carbon formation and graphite films were prepared at <italic>P</italic>_L ≥ 170 W and <italic>P</italic>_to ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at <italic>P</italic>_tot = 400‐800 Pa and <italic>P</italic>_L = 130‐170 W. The maximum <italic>R</italic>_dep was about 50 μm·h⁻¹ at <italic>P</italic>_L = 170 W, <italic>P</italic>_tot = 600 Pa and <italic>T</italic>_dep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. [ABSTRACT FROM AUTHOR]