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Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures.
- Source :
- Atomic Energy Science & Technology; Dec2023, Vol. 57 Issue 12, p2288-2294, 7p
- Publication Year :
- 2023
-
Abstract
- The introduction of strain InxGa<subscript>1-x</subscript>As channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa<subscript>1-x</subscript>As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated. The experiment results show that, after the same high electron irradiation dose, the 2DEG mobility and density in InP-based HEMT structures with strain InxGa<subscript>1-x</subscript>As (x>0.53) channel decrease more dramatically than that without strain In0.53Ga0.47As channel. Moreover, the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the InxGa<subscript>1-x</subscript> As channel. The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs. [ABSTRACT FROM AUTHOR]
- Subjects :
- TWO-dimensional electron gas
IRRADIATION
ELECTRONS
Subjects
Details
- Language :
- English
- ISSN :
- 10006931
- Volume :
- 57
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Atomic Energy Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 176481528
- Full Text :
- https://doi.org/10.7538/yzk.2023.youxian.0701