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20 results on '"Winzell, T"'

1. Scanning mu-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films

Author

Winzell, T., Pejnefors, J., Elfman, M., Östling, Mikael, Whitlow, H. J., Winzell, T., Pejnefors, J., Elfman, M., Östling, Mikael, and Whitlow, H. J.

Abstract

Scanning microbeam Rutherford backscattering spectrometry (mu -RBS) has been employed to investigate local loading effects of non-selective epitaxial growth (NSEG) of SiGe on Si in structures consisting of apertures in an SiO2 mask. The structure sizes were 22 mum x 22 mum. 42 mum x 42 mum, 82 mum x 82 mum and 500 mum x 2000 mum. From the measured thickness and Ge content, it was concluded that in NSEG local loading effects for the structure sizes used are small or absent., QC 20100525

Published
2001
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3. Characterisation of compact discs using time of flight-energy elastic recoil detection analysis

Author

Zhang, YW, Possnert, G, Jonsson, L, Winzell, T, Whitlow, HJ, Zhang, YW, Possnert, G, Jonsson, L, Winzell, T, and Whitlow, HJ

Abstract

The challenge of meeting the ever increasing demands for low-cost information storage media with greater information storage density and rapid access has prompted development of sophisticated optical technologies, e.g., compact disc (CD) and digital video, Addresses: Zhang YW, Uppsala Univ, Angstrom Lab, Div Ion Phys, Box 534, SE-75121 Uppsala, Sweden. Uppsala Univ, Angstrom Lab, Div Ion Phys, SE-75121 Uppsala, Sweden. M2 Engn AB, S-16391 Spanga, Sweden. Lund Inst Technol, Div Nucl Phys, SE-22100 Lund, Swed

Published
2001

4. Analysis of ferromagnetic removable hard disc media ageing by time of flight-energy elastic recoil detection analysis

Author

Winzell, T, Zhang, YW, Whitlow, HJ, Winzell, T, Zhang, YW, and Whitlow, HJ

Abstract

Time of flight-energy elastic recoil detection analysis (ToF-E ERDA) has been applied to study the ageing of commercial thin film hard discs. Samples From a standard commercial removable hard disc were subjected to accelerated ageing heat treatment in nor, Addresses: Winzell T, Lund Inst Technol, Dept Phys Nucl, Box 118, S-22100 Lund, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Univ Uppsala, Angstrom Lab, Div Ion Phys, S-75121 Uppsala, Sweden.

Published
2000

5. Influence of heavy ion irradiation damage on silicon charged particle detector calibration

Author

Zhang, YW, Whitlow, HJ, Winzell, T, Zhang, YW, Whitlow, HJ, and Winzell, T

Abstract

The full analytical potential of heavy ion backscattering and elastic recoil detection analysis (ERDA) depends critically on establishing a reliable energy calibration. In order to make accurate measurements of thin film samples we have investigated the c, Addresses: Zhang YW, Uppsala Univ, Angstrom Lab, Div Ion Phys, POB 534, SE-75121 Uppsala, Sweden. Uppsala Univ, Angstrom Lab, Div Ion Phys, SE-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, SE-22100 Lund, Sweden.

Published
2000

6. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development

Author

Zhang, YW, Winzell, T, Zhang, TH, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, Whitlow, HJ, Zhang, YW, Winzell, T, Zhang, TH, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, and Whitlow, HJ

Abstract

The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1 x 10(16)-2.6 x 10(18) ions cm(-2)) keV Co metal vapour vacuum are (MEVVA) irradiation has been investigated by scanning electron mi, Addresses: Zhang YW, Univ Uppsala, Div Ion Phys, Angstrom Lab, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Lund Inst Technol, D

Published
1999

7. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium

Author

Zhang, YW, Winzell, T, Zhang, TH, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, Whitlow, HJ, Zhang, YW, Winzell, T, Zhang, TH, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, and Whitlow, HJ

Abstract

The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Are (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling., Addresses: Zhang YW, Univ Uppsala, Angstrom Lab, Div Ion Phys, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Lund Inst Technol, D

Published
1999

8. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formation of thin silicide surface films

Author

Zhang, YW, Winzell, T, Zhang, TH, Andersson, M, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, Whitlow, HJ, Zhang, YW, Winzell, T, Zhang, TH, Andersson, M, Maximov, IA, Sarwe, EL, Graczyk, M, Montelius, L, and Whitlow, HJ

Abstract

In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 With different thickness, have been implanted by Co to normal fluences from 1x10(16) to 2.6x10(18) ions cm(-2). The Co ions were produced by a high beam curren, Addresses: Zhang YW, Univ Uppsala, Div Ion Phys, Angstrom Lab, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Univ Uppsala, Dept I

Published
1999

9. Optical signature modeling at FOI

Author

Nelsson, C., primary, Hermansson, P., additional, Nyberg, S., additional, Persson, A., additional, Persson, R., additional, Sjökvist, S., additional, and Winzell, T., additional

Published
2006
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