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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium
- Publication Year :
- 1999
-
Abstract
- The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Are (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling.<br />Addresses: Zhang YW, Univ Uppsala, Angstrom Lab, Div Ion Phys, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Lund Inst Technol, D
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1234773568
- Document Type :
- Electronic Resource