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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $\mu$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $\mu$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%., Comment: Added data on a second measurement of device A and a measurement of device B, expanded discussion of a trivial scenario. Refs added, author list updated

We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating the Josephson junction changes the number of junction modes. Both effects are revealed by the dependence of qubit frequency on parallel magnetic field. A detailed model of the wire and junction yields behavior consistent with experiment. In the multi-mode regime, fluctuations in qubit frequency are considerably smaller than the theoretical "universal" value, also smaller than numerics, and consistent with previous measurements of fluctuating critical current.

We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes., Comment: Final version

We develop a protocol to determine the presence and extent of a topological phase with Majorana zero modes in a hybrid superconductor-semiconductor device. The protocol is based on conductance measurements in a three-terminal device with two normal leads and one superconducting lead. A radio-frequency technique acts as a proxy for the measurement of local conductance, allowing a rapid, systematic scan of the large experimental phase space of the device. Majorana zero modes cause zero bias conductance peaks at each end of the wire, so we identify promising regions of the phase space by filtering for this condition. To validate the presence of a topological phase, a subsequent measurement of the non-local conductance in these regions is used to detect a topological transition via the closing and reopening of the bulk energy gap. We define data analysis routines that allow for an automated and unbiased execution of the protocol. Our protocol is designed to screen out false positives, especially trivial Andreev bound states that mimic Majorana zero modes in local conductance. We apply the protocol to several examples of simulated data illustrating the detection of topological phases and the screening of false positives., Comment: 28 pages, 18 figures, 1 table

First principles simulations are conducted to shed light on the question of whether a two-dimensional topological insulator (2DTI) phase may be obtained at the interface between InAs and GaSb. To this end, the InAs/GaSb interface is compared and contrasted with the HgTe/CdTe interface. Density functional theory (DFT) simulations of these interfaces are performed using a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. For the HgTe/CdTe interface our simulations show that band crossing is achieved and an inverted gap is obtained at a critical thickness of 5.1 nm of HgTe, in agreement with experiment and previous DFT calculations. In contrast, for InAs/GaSb the gap narrows with increasing thickness of InAs; however the gap does not close for interfaces with up to 50 layers (about 15 nm) of each material. When an external electric field is applied across the InAs/GaSb interface, the GaSb-derived valence band maximum is shifted up in energy with respect to the InAs-derived conduction band minimum until eventually the bands cross and an inverted gap opens. Our results show that it may be possible to reach the topological regime at the InAs/GaSb interface under the right conditions. However, it may be challenging to realize these conditions experimentally, which explains the difficulty of experimentally demonstrating an inverted gap in InAs/GaSb.

We discuss and illustrate the appearance of topological fermions and bosons in triple-point metals, where a band crossing of three electronic bands occurs close to the Fermi level. Topological bosons appear in the phonon spectrum of certain triple-point metals, depending on the mass of atoms that form the binary triple-point metal. We first provide a classification of possible triple-point electronic topological phases possible in crystalline compounds and discuss the consequences of these topological phases, seen in Fermi arcs, topological Lifshitz transitions and transport anomalies. Then we show how the topological phase of phonon modes can be extracted and proven for relevant compounds. Finally, we show how the interplay of electronic and phononic topologies in triple-point metals puts these \textit{metallic} materials into the list of the most efficient \textit{metallic} thermoelectrics known to date., Comment: arXiv admin note: substantial text overlap with arXiv:1605.04653

We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. Our approach takes into account on equal footing important key ingredients: proximity-induced superconductivity, orbital and Zeeman effect of an applied magnetic field, spin-orbit coupling as well as the electrostatic environment. As a model system, we consider indium arsenide (InAs) nanowires with epitaxial aluminum (Al) shell and demonstrate qualitative agreement of the obtained results with the existing experimental data. Finally, we characterize the topological superconducting phase emerging in a finite magnetic field and calculate the corresponding topological phase diagram., Comment: 16 pages, 18 figures

We consider a new model system supporting Majorana zero modes based on semiconductor nanowires with a full superconducting shell. We demonstrate that, in the presence of spin-orbit coupling in the semiconductor induced by a radial electric field, the winding of the superconducting order parameter leads to a topological phase supporting Majorana zero modes. The topological phase persists over a large range of chemical potentials and can be induced by a predictable and weak magnetic field piercing the cylinder. The system can be readily realized in semiconductor nanowires covered by a full superconducting shell, opening a pathway for realizing topological quantum computing proposals., Comment: 12 pages, 9 figures

We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity induced superconducting gap, effective g-factor, and spin-orbit coupling, which all play a key role in understanding Majorana physics. We further show that level repulsion due to spin-orbit coupling in a finite size system can lead to seemingly stable zero bias conductance peaks, which mimic the behavior of Majorana zero modes. Our results improve the understanding of realistic Majorana nanowire systems., Comment: 10 pages, 5 figures, supplemental information as ancillary file

Wannier tight-binding models are effective models constructed from first-principles calculations. As such, they bridge a gap between the accuracy of first-principles calculations and the computational simplicity of effective models. In this work, we extend the existing methodology of creating Wannier tight-binding models from first-principles calculations by introducing the symmetrization post-processing step, which enables the production of Wannier-like models that respect the symmetries of the considered crystal. Furthermore, we implement automatic workflows, which allow for producing a large number of tight-binding models for large classes of chemically and structurally similar compounds, or materials subject to external influence such as strain. As a particular illustration, these workflows are applied to strained III-V semiconductor materials. These results can be used for further study of topological phase transitions in III-V quantum wells.

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schr\"odinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Land\'e g-factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires., Comment: 19 pages, 16 figures; added section "Effect of disorder in SC-SM heterostructures"

Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Land\'e g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS coupling in higher subbands leads to an enhancement of the g-factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g-factors under magnetic field rotation allows for a straightforward experimental test of this theory., Comment: Supplemental Material appended

We investigate the effect of strong interactions on the spectral properties of quantum wires with strong Rashba spin-orbit interaction in a magnetic field, using a combination of Matrix Product State and bosonization techniques. Quantum wires with strong Rashba spin-orbit interaction and magnetic field exhibit a partial gap in one-half of the conducting modes. Such systems have attracted wide-spread experimental and theoretical attention due to their unusual physical properties, among which are spin-dependent transport, or a topological superconducting phase when under the proximity effect of an s-wave superconductor. As a microscopic model for the quantum wire we study an extended Hubbard model with spin-orbit interaction and Zeeman field. We obtain spin resolved spectral densities from the real-time evolution of excitations, and calculate the phase diagram. We find that interactions increase the pseudo gap at $k = 0$ and thus also enhance the Majorana-supporting phase and stabilize the helical spin order. Furthermore, we calculate the optical conductivity and compare it with the low energy spiral Luttinger Liquid result, obtained from field theoretical calculations. With interactions, the optical conductivity is dominated by an excotic excitation of a bound soliton-antisoliton pair known as a breather state. We visualize the oscillating motion of the breather state, which could provide the route to their experimental detection in e.g. cold atom experiments.

The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 have recently sparked interest for exhibiting giant magnetoresistance. While the exact nature of magnetoresistance in these materials is still under active investigation, there are experimental results indicating anisotropic negative magnetoresistance. We study the effect of magnetic field on the band structure topology of these materials by applying a Zeeman splitting. In the absence of magnetic field, we find that the materials are weak topological insulators, which is in agreement with previous studies. When the magnetic field is applied, we find that type-II Weyl points form. This result is found first from a symmetry argument, and then numerically for a k.p model of TaAs2 and a tight-binding model of NbSb2. This effect can be of help in search for an explanation of the anomalous magnetoresistance in these materials.

Topologically protected fermionic quasiparticles appear in metals, where band degeneracies occur at the Fermi level, dictated by the band structure topology. While in some metals these quasiparticles are direct analogues of elementary fermionic particles of the relativistic quantum field theory, other metals can have symmetries that give rise to quasiparticles, fundamentally different from those known in high-energy physics. Here we report on a new type of topological quasiparticles -- triple point fermions -- realized in metals with symmorphic crystal structure, which host crossings of three bands in the vicinity of the Fermi level protected by point group symmetries. We find two topologically different types of triple point fermions, both distinct from any other topological quasiparticles reported to date. We provide examples of existing materials that host triple point fermions of both types, and discuss a variety of physical phenomena associated with these quasiparticles, such as the occurrence of topological surface Fermi arcs, transport anomalies and topological Lifshitz transitions., Comment: 14 pages, 13 figures, 3 tables

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs$_{1-x}$Sb$_x$ have spin-splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at $x = 0.5$, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs$_{0.5}$Sb$_{0.5}$ a semiconductor with a large intrinsic linear in $k$ bulk spin splitting., Comment: 6 pages, 5 figures

The construction of exponentially localized Wannier functions for a set of bands requires a choice of Bloch-like functions that span the space of the bands in question, and are smooth and periodic functions of k in the entire Brillouin zone. For bands with nontrivial topology, such smooth Bloch functions can only be chosen such that they do not respect the symmetries that protect the topology. This symmetry breaking is a necessary, but not sufficient condition for smoothness, and, in general, finding smooth Bloch functions for topological bands is a complicated task. We present a generic technique for finding smooth Bloch functions and constructing exponentially localized Wannier functions in the presence of nontrivial topology, given that the net Chern number of the bands in question vanishes. The technique is verified against known results in the Kane-Mele model. It is then applied to the topological insulator Bi2Se3, where the topological state is protected by two symmetries: time reversal and inversion. The resultant exponentially localized Wannier functions break both these symmetries. Finally, we illustrate how the calculation of the Chern-Simons orbital magnetoelectric response is facilitated by the proposed smooth gauge construction., Comment: 13 pages, 10 figures