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In this work, a low-temperature (100 °C) gas sensor based on heterojunctions of porous Si and SnO2 nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO2 NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO2 NW heterojunctions. H2S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO2 NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO2 NWs in combination with porous Si to realize low-temperature H2S gas sensors that are highly compatible with existing Si processing technology.

To attain high life standards, it is important to develop high-performance non-toxic gas sensors for public safety, environmental pollutant control, industrial processes, etc. Because reports on single element semiconductor-coated semiconducting metal oxides for sensing applications are rare, we synthesized SnO2 nanowires and coated them with a 5 nm-thick or 10 nm-thick Si layer for H2S gas sensing studies. SnO2 nanowires were successfully synthesized using a highly pure metallic Sn powder at high temperature in a tube furnace by the vapor-liquid-solid method and Si was deposited on the nanowires by the sputtering technique. The desired morphology and composition of the synthesized nanowires were confirmed by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. Moreover, the gas sensing characteristics of pristine and Si-coated SnO2 nanowires toward H2S, CO, H2, C6H6, C2H5OH and C6H7 gases were investigated. The sensing results revealed a good response to H2S at the optimum operational temperature of 100 °C. Notably, Si-coated SnO2 nanowire sensors showed a better response to H2S than pristine SnO2 nanowires. The mechanism of H2S sensing is discussed in detail here. This study shows that the Si coating on the SnO2 nanowire enhances its sensing performance and decreases the sensing temperature required for H2S gas detection. (Received May 3, 2019; Accepted September 7, 2019)

Branched nanowires (NWs) are a novel class of composite materials with increased surface area relative to their pristine one-dimensional counterparts. Accordingly, they are good choice for gas sensing studies. In this study, p-n, TeO2-branched SnO2 NWs were produced by a two-step catalyst-assisted vapor-liquid-solid (VLS) growth technique for gas sensing studies. First, SnO2 NWs were synthesized from highly pure Sn powders, and TeO2 branches were subsequently added. The fabricated samples were well characterized in terms of morphology, crystallinity, and chemical composition. Gas sensing results exhibited the enhanced NO2 sensing capability of TeO2 branched SnO2 NW sensors relative to pristine SnO2 NWs. In particular, the maximum responses (Rg/Ra) of pristine and TeO2 branched SnO2 sensors to 10 ppm NO2 were 6.34 and 10.25, respectively. Furthermore, dynamics of TeO2 branched sensor at the optimal temperature was faster. Superior sensing properties of TeO2 branched SnO2 NWs were related to the high surface area of the branched sensors and creation of p-n heterojunctions on the surfaces of this sensor. We believe that branching is a good way to realize gas sensors for practical usages.

A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO2 nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry.

In view of the various qualifications required of materials nowadays, efforts to change the characteristics of inherent materials have continued. However, most material conversion techniques that have been used in the past, such as alloy design and doping effect, cannot overcome the limitation that properties are only added to the original characteristics of pristine materials. Therefore, herein, we introduced a new material design technique, a so-called “Molecular Group System”, which is completely different from existing methods. Since whole-set-systems are considered one-energetic-unit-system, either only the merits of the constituent elements can be emphasized or new materials completely different from the raw ones can be synthesized. In this study, block-stacking bottom-up approach was employed to form a one group system from SnO2, SnOx, Sn, and graphene powders, and a binder, using high-energy irradiation. Then, we discussed theoretical verifications such as SnO2-reduction and Sn-channeling.

A novel gas sensor fabricated from ZnO-shelled Si nanowires (SiNWs) is presented. After coating a thin layer of Au on the surfaces of Si NWs, ZnO layers were formed on the surfaces of p-SiNWs by thermal evaporation of Zn powders and a subsequent oxidation process. Microscopic analysis confirmed the successful formation of ZnO-Si core-shell NWs with Au nanoparticles present on the shell surface. The gas sensing performance of the gas sensor fabricated using the p-Si/n-ZnO core-shell NWs was evaluated for various gases. The sensor exhibited outstanding response and selectivity to H2S gas. The gas sensing mechanism was evaluated in detail and attributed to various factors, including the formation of ZnO/Si and Au/ZnO heterojunctions and the chemical attraction between ZnO and Au. The results demonstrate a new sensing material for H2S detection in various fields that can be easily incorporated into Si-based devices.

Branched nanowires (b-NWs) have been used for advanced applications because of their nanoscale dimensions, high surface area, and scalable synthetic methods. Herein, for the first time, we report the fabrication of Au-functionalized ZnO-branched SnO2 NWs for enhanced gas sensing application. As-fabricated NWs were structurally and morphologically investigated by X-ray diffraction, scanning electron microscopy as well as transmission electron microscopy to reveals the crystallinity and morphology of NWs. By comparing the gas sensing properties of Au-functionalized b-NWs, b-NWs, and pristine SnO2 NWs gas sensors, in terms of their sensitivity and cross-sensitivity towards NO2, we demonstrate the superior sensing properties of Au-functionalized b-NWs sensors. In particular the Au-functionalized b-NWs sensor showed a response (Rg/Ra) of 13.07 to 10 ppm NO2 gas which was higher than those of b-NWs, and pristine SnO2 NWs gas sensors. In addition to the special architecture of sensors (i.e. ZnO b-NWs on SnO2 NWs), which produces a large number of hetero- and homojunctions (a branching effect), Au acts as a catalyst to further improve the sensing characteristics of this particular sensor (a functionalization effect). According to the obtained results, we believe that metal oxide gas sensors based on noble metal-functionalized b-NWs, which use a facile synthesis procedure and produce enhanced sensing performance, will play a vital role in the future of the sensor industry.

We report the electrical and optical characteristics of SnO2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO2 thin films were compared with those of the as-deposited SnO2 thin films. After MW irradiation, the conductivity and transparency of the thin films were enhanced. In addition, the samples irradiated for 5 min showed optimal carrier concentration, Hall mobility, resistivity, and transmittance values of 1.5 × 1020 cm−3, 4.6 cm2/V s, 8 × 10−3 Ω cm, and 95.77%, respectively. The improved properties of the MW-irradiated samples were attributed mainly to the formation of an oxygen vacancy in the SnO2 lattice during MW irradiation. Our results can be applied for the fabrication of pure SnO2-based transparent conductive oxides; these oxides are generally doped with other elements.

We report the gas-sensing properties of pristine and SnS2 functionalized TeO2 nanowires (NWs). TeO2 NWs were synthesized by a vapor–liquid–solid growth method, and SnS2 functionalization was performed using an atomic layer deposition technique followed by thermal treatment. Structural and morphological analyses verified the formation of pristine and SnS2 functionalized TeO2 NWs with desired composition, phase, and morphology. Interestingly, sensing results showed that the pristine TeO2 NW gas sensor had better sensing properties relative to the SnS2 functionalized TeO2 NW gas sensor. An underlying sensing mechanism is explained in detail, and reasons for the decrease of sensing performance with the SnS2 functionalized TeO2 NW sensor was attributed to the coverage of TeO2 surface by the SnS2 nanoparticles.

Theoretical advances in science are inherently time-consuming to realise in engineering, since their practical application is hindered by the inability to follow the theoretical essence. Herein, we propose a new method to freely control the time, cost, and process variables in the fabrication of a hybrid featuring Au nanoparticles on a pre-formed SnO2 nanostructure. The above advantages, which were divided into six categories, are proven to be superior to those achieved elsewhere, and the obtained results are found to be applicable to the synthesis and functionalisation of other nanostructures. Furthermore, the reduction of the time-gap between science and engineering is expected to promote the practical applications of numerous scientific theories.

The use of conventional doping methods requires consideration of not only the energy connection with the base material but also the limits of the type and doping range of the dopant. The scope of the physico-chemical change must be determined from the properties of the base material, and when this limit is exceeded, a large energy barrier must be formed between the base material and the dopant as in a heterojunction. Thus, starting from a different viewpoint, we introduce a so-called metallization of surface reduction method, which easily overcomes the disadvantages of existing methods while having the effect of doping the base material. Such new synthetic techniques enable sequential energy arrangements–gradients from the surface to the centre of the material–so that free energy transfer effects can be obtained as per the energies in the semiconducting band, eliminating the energy discontinuity of the heterojunction.

Theoretical advances in science are inherently time-consuming to realise in engineering, since their practical application is hindered by the inability to follow the theoretical essence. Herein, we propose a new method to freely control the time, cost, and process variables in the fabrication of a hybrid featuring Au nanoparticles on a pre-formed SnO2 nanostructure. The above advantages, which were divided into six categories, are proven to be superior to those achieved elsewhere, and the obtained results are found to be applicable to the synthesis and functionalisation of other nanostructures. Furthermore, the reduction of the time-gap between science and engineering is expected to promote the practical applications of numerous scientific theories.

Sub-20-nm Ag nanoparticles created via sputtering were freely moved into preformed Si pores and were arranged along both wall and lower surfaces in etched Si layers via a post-thermal annealing treatment. The variously sized Ag quantum dots on the porous Si facilitate broadband visible emission via photo-generated enhanced luminescent effects, i.e., plasmonic effects of Ag nanoparticles by electron transfer from the Si-based matrix to the metallic Ag. The emission wavelengths and intensities, depending on the sizes of the Ag quantum dots, were determined by the degree of oxidation of the Si-based substrate such as Si, SiOx, and SiO2, according to different post-thermal annealing conditions. The morphological, microstructural, and optical evolution of Ag nanoparticles and Si pores were simply observed via side-cross-sectional scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and crystalline-controlled photoluminescence analyses, respectively. The origin of a new systematic luminescence mechanism based on energy-equilibria is also presented.

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001-0.003 Ω.cm had the highest response to NO

With high-performance room-temperature gas sensors being in great demand from an energy-saving standpoint, in this study, we fabricated porous silicon (PS) sensors by electrochemically etching at different times (30, 60, and 90 min). The porous nature of the etched PSs was studied using scanning electron microscopy, and subsequently gas sensors were fabricated. NO2 sensing studies showed that the highest gas performance can be obtained at room temperature (30 °C). Furthermore, the PS sensor etched for 60 min had the best performance among the sensors, which is related to its higher surface area and high enough initial resistance. In particular for the PS sensor etched for 60 min, the response (Ra/Rg) to 10 ppm NO2 was 9.56, which was much higher than other interfering gases, demonstrating its high selectivity towards NO2 gas. This study reveals the need for optimization of electrochemical etching to realize gas sensors based on PS working at room temperature.