Effect of microwave irradiation on the electrical and optical properties of SnO2 thin films

We report the electrical and optical characteristics of SnO2 thin films irradiated by microwaves (MWs) and grown using atomic layer deposition in a commercial MW oven operating at a frequency of 2.45 GHz. The properties of the MW-irradiated SnO2 thin films were compared with those of the as-deposited SnO2 thin films. After MW irradiation, the conductivity and transparency of the thin films were enhanced. In addition, the samples irradiated for 5 min showed optimal carrier concentration, Hall mobility, resistivity, and transmittance values of 1.5 × 1020 cm−3, 4.6 cm2/V s, 8 × 10−3 Ω cm, and 95.77%, respectively. The improved properties of the MW-irradiated samples were attributed mainly to the formation of an oxygen vacancy in the SnO2 lattice during MW irradiation. Our results can be applied for the fabrication of pure SnO2-based transparent conductive oxides; these oxides are generally doped with other elements.