76 results on '"Vulliet N"'
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2. Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM
3. Ultra-dense silicon nanowires: A technology, transport and interfaces challenges insight (invited)
4. Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)
5. Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI
6. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
7. (Invited) Cyclic Deposition/Etch Processes for the Formation of Si Raised Sources and Drains in Advanced MOSFETs
8. A Silicon Photonics Technology for 400 Gbit/s Applications
9. QPSK Modulation in the O-Band Using a Single Dual-Drive Mach Zehnder Silicon Modulator
10. Evaluation of Advanced Process Integration Options for next Generation of Si-Photonics platform
11. Developments in 300mm silicon photonics using traditional CMOS fabrication methods and materials
12. Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions
13. 20-Gbps QPSK Signal Generation Using a Silicon Dual-Drive Mach-Zehnder Modulator Operating in the O-Band
14. Towards Next Generations of Silicon Photonics
15. Advanced modulation format using silicon modulators in the O-band.
16. Recent Progress in Silicon Photonics R&D and Manufacturing on 300mm Wafer Platform
17. 3D source/drain doping optimization in multi-channel MOSFET. ESSDERC
18. Process Control for Silicon Photonics using 300mm SOI Wafers
19. Low cost 300mm double-SOI substrate for low insertion loss 1D & 2D grating couplers
20. 40Gbit/s silicon ring resonator-based modulator fabricated on 300mm SOI wafers
21. Advanced modulation format using silicon modulators in the O-band
22. A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications
23. Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers
24. High speed silicon modulators on 300 mm SOI wafers
25. Experimental study on carrier transport limiting phenomena in 10 nm width nanowire CMOS transistors
26. 3D source/drain doping optimization in Multi-Channel MOSFET
27. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires
28. 3D multichannels and stacked nanowires technologies for new design opportunities in nanoelectronics
29. Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack
30. A mobility extraction method for 3D multichannel devices
31. 3D stacked channels: how series resistances can limit 3D devices performance
32. Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI
33. Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors
34. SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells.
35. Recent progress in Silicon Photonics R&D and manufacturing on 300mm wafer platform.
36. Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect.
37. Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform.
38. IgE Synthesis <em>in vitro</em>: Attempt to Isolate Stimulating Factors.
39. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires
40. IgE Synthesis in vitro: Attempt to Isolate Stimulating Factors
41. SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells
42. Low cost 300mm double-SOI substrate for low insertion loss 1D & 2D grating couplers.
43. (Invited) Cyclic Deposition/Etch Processes for the Formation of Si Raised Sources and Drains in Advanced MOSFETs
44. Broadband Fourier-transform silicon nitride spectrometer with wide-area multiaperture input.
45. Dual-band fiber-chip grating coupler in a 300 mm silicon-on-insulator platform and 193 nm deep-UV lithography.
46. Polarization independent and temperature tolerant AWG based on a silicon nitride platform.
47. Erbium-doped hybrid waveguide amplifiers with net optical gain on a fully industrial 300 mm silicon nitride photonic platform.
48. Dual-polarization silicon nitride Bragg filters with low thermal sensitivity.
49. SiGe-enhanced Si capacitive modulator integration in a 300 mm silicon photonics platform for low power consumption.
50. Low loss poly-silicon for high performance capacitive silicon modulators.
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