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SiGe-enhanced Si capacitive modulator integration in a 300 mm silicon photonics platform for low power consumption.
- Source :
-
Optics express [Opt Express] 2019 Jun 24; Vol. 27 (13), pp. 17701-17707. - Publication Year :
- 2019
-
Abstract
- The successful integration of capacitive phase shifters featuring a p-type strained SiGe layer in a 300 mm silicon photonics platform is presented. The phase shift is evaluated with a voltage swing of only 0.9 V <subscript>pp</subscript> , compatible with CMOS technology. A good correlation is shown between the phase shift efficiency from 10 to 60°/mm and the capacitive oxide thickness varying from 15 to 4 nm. Corresponding insertion losses are as low as 3 dB/mm thanks to the development of low loss poly-silicon and to a careful design of the doped layers within the waveguide. The thin SiGe layer brings an additional 20% gain in efficiency due to higher hole efficiency in strained SiGe.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 27
- Issue :
- 13
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 31252726
- Full Text :
- https://doi.org/10.1364/OE.27.017701