477 results on '"Voelskow, M."'
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2. Diffusion and Interaction of In and As Implanted into SiO2 Films
3. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots
4. XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots
5. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films
6. Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
7. Lattice Location Determination of Ge in SiC by ALCHEMI
8. Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
9. Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling
10. Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure
11. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
12. Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer
13. Диффузия атомов In в пленках SiO-=SUB=-2-=/SUB=-, имплантированных ионами As-=SUP=-+-=/SUP=-
14. Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure
15. Flash-lamp annealing of semiconductor materials—Applications and process models
16. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
17. Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film
18. Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure
19. Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures
20. Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique
21. Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation
22. Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions
23. Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
24. SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer
25. High Dose High Temperature Ion Implantation of Ge into 4H-SiC
26. Crystallization and surface erosion of SIC by ion irradiation at elevated temperatures
27. Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
28. A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
29. Advanced thermal processing of semiconductor materials in the millisecond range
30. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
31. Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
32. Amorphization and crystallization in high-dose Zn+-implanted silicon
33. Ion beam synthesis by tungsten-implantation into 6H—silicon carbide
34. Ion Beam Induced Epitaxial Crystallization of SiC: Fluence -and Temperature Dependence
35. Controlled Nickel Silicidation of Silicon Nanowires for Fabrication of Reconfigurable Field Effect Transistors
36. Ex situ n+ doping of GeSn alloys via non-equilibrium processing
37. Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-
38. Annealing studies of Al-implanted 6H-SiC in an induction furnace
39. High-fluence Ga-implanted silicon—The effect of annealing and cover layers.
40. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si
41. Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings
42. Towards Reconfigurable Field Effect Transistors: Controlled Nickel Silicidation using Flash Lamp Annealing
43. Ex-situ doping and Ohmic contact formation with low contact resistance on MBE grown GeSn on Si
44. Ex situ n+ doping of GeSn alloys via non-equilibrium processing
45. The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices.
46. Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation.
47. Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps.
48. In situ ohmic contact formation for n-type Ge via non-equilibrium processing
49. Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure.
50. The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich SiO2 via Er doping.
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