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Multicomponent or high-entropy oxide films are of interest due to their remarkable structure and properties. Here, energetic ion irradiation is utilized for controlling the phase formation and structure of AlCrNbTi oxide at growth temperature of 500 degrees C. The ion acceleration is achieved by using a high-power impulse magnetron sputtering (HiPIMS) discharge, accompanied by a 10 & mu;s-long synchronized substrate bias (Usync), to minimize the surface charging effect and accelerate early-arriving ions, mainly Al+, O+, Ar2+, and Al2+. By increasing the magnitude of Usync from-100 V to-500 V, the film structure changes from amorphous to single-phase corundum, followed by the formation of high-number-density stacking faults (or nanotwins) at Usync =-500 V. This approach paves the way to tailor the high-temperature-phase and defect formation of oxide films at low growth temperature, with prospects for use in protective-coating and dielectric applications.

Selective ion acceleration using a synchronized substrate bias is a common way to tailor the microstructure and intrinsic stress of films grown by high-power impulse magnetron sputtering (HiPIMS), owing to the high degree of sputtered metal ionization and the inherent time separation between different ionic species in the ion fluxes at the substrate position. Here we show that it is possible to achieve selective acceleration of ionic species with different ion masses by employing a synchronized positive reversed pulse (Urev) on the sputtering target itself, after the end of the main HiPIMS pulse, i.e., bipolar HiPIMS (BP-HiPIMS), if the substrate is grounded. The evidence is provided by growing (Al,Cr)2O3 films using BP-HiPIMS where the time delay (Delta tau acc) between the HiPIMS-pulse and the positive reversed pulse as well as the length of the positive reversed pulse (tau acc) are varied. In this way, both film stresses and film crystal structures are altered. The obvious drawback of BP-HiPIMS, that the ion-accelerating potential cannot be applied during the HiPIMS-pulse itself, has been minimized by using short HiPIMS pulses of 20 mu s during which the peak of the substrate ion current density (Js) occurs well after the end of the HiPIMS-pulse indicating that the main portion of the ion fluxes can be accelerated by Urev. An important observation is that the temporal evolution of Js did not change as the different reversed pulse pa-rameters (Urev, Delta tau acc, and tau acc) were altered. This is evidence, that in these experiments, the dominating ion-acceleration occurs in the plasma sheath at the substrate, i.e., similar to the case when synchronized substrate bias is utilized. Funding Agencies|Swedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; National Natural Science Foundation of China [51805102, 52165021]; Science and Technology Foundation of Guizhou Province [[2020] 1Y228]; Eurostars program [E!114277]

It has been found that two-dimensional materials, such as graphene, can be used as remarkable gas detection platforms as even minimal chemical interactions can lead to distinct changes in electrical conductivity. In this work, epitaxially grown graphene was decorated with iron oxide nanoparticles for sensor performance tuning. This hybrid surface was used as a sensing layer to detect formaldehyde and benzene at concentrations of relevance in air quality monitoring (low parts per billion). Moreover, the time constants could be drastically reduced using a derivative sensor signal readout, allowing detection at the sampling rates desired for air quality monitoring applications.

Photoelectrochemical (PEC) water-splitting offers a promising method to convert the intermittent solar energy into renewable and storable chemical energy. However, the most studied semiconductors generally exhibit a poor PEC performance including low photocurrent, small photovoltage, and/or large onset potential. In this work, we demonstrate a significant enhancement of photovoltage and photocurrent together with a substantial decrease of onset potential by introducing electrocatalytic and p-type NiO nanoclusters on an n-type cubic silicon carbide (3C-SiC) photoanode. Under AM1.5G 100 mW cm(-2) illumination, the NiO-coated 3C-SiC photoanode exhibits a photocurrent density of 1.01 mA cm(-2) at 0.55 V versus reversible hydrogen electrode (V-RHE), a very low onset potential of 0.20 V-RHE and a high fill factor of 57% for PEC water splitting. Moreover, the 3C-SiC/NiO photoanode shows a high photovoltage of 1.0 V, which is the highest value among reported photovoltages. The faradaic efficiency measurements demonstrate that NiO also protects the 3C-SiC surface against photo-corrosion. The impedance measurements evidence that the 3C-SiC/NiO photoanode facilitates the charge transfer for water oxidation. The valence-band position measurements confirm the formation of the 3C-SiC/NiO p-n heterojunction, which promotes the separation of the photogenerated carriers and reduces carrier recombination, thus resulting in enhanced solar water-splitting. Funding Agencies|Swedish Research Council (Vetenskapsradet) [621-2014-5461, 2018-04670, 621-2014-5825]; Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [CH2016-6722]; AForsk Foundation [16-399]; Stiftelsen Olle Engkvist Byggmastare [189-0243]; EU project CHALLENGE; Knut and Alice Wallenberg Foundation [KAW 2014.0276]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

The precise control of the growth nanostructured thin films at low temperature is critical for the continued development of microelectronic enabled devices. In this study, nanocomposite Ni-Si-N thin films were deposited at low temperature by reactive high-power impulse magnetron sputtering. A composite Ni-Si target (15 at.% Si) in combination with a Ar/N2 plasma were used to deposit films onto Si(0 0 1) substrates, without any additional substrate heating or any post-annealing. The films microstructure changes from a polycrystalline to nanocomposite structure when the nitrogen content exceeds 16 at.%. X-ray diffraction and (scanning) transmission electron microscopy analyses reveal that the microstructure consists of nanocrystals, NixSi (x > 1) 7–8 nm in size, embedded in an amorphous SiNx matrix. It is proposed that this nanostructure is formed at low temperatures due to the repeated-nucleation of NixSi nanocrystals, the growth of which is restricted by the formation of the SiNx phase. X-ray photoelectron spectroscopy revealed the trace presence of a ternary solid solution mainly induced by the diffusion of Ni into the SiNx matrix. Four-probe electrical measurements reveal all the deposited films are electrically conducting.

The hydrogen evolution reaction (HER) is a key process in electrochemical water splitting. To lower the cost and environmental impact of this process, it is highly motivated to develop electrocatalysts with low or no content of noble metals. Here, we report on an ingenious synthesis of hybrid PtxNi1-x electrocatalysts in the form of a nanoparticle-nanonetwork structure with very low noble metal content. The structure possesses important features such as good electrical conductivity, high surface area, strong interlinking, and substrate adhesion, which render an excellent HER activity. Specifically, the best performing Pt0.05Ni0.95 sample demonstrates a Tafel slope of 30 mV dec-1 in 0.5 M H2SO4 and an overpotential of 20 mV at a current density of 10 mA cm-2 with high stability. The impressive catalytic performance is further rationalized in a theoretical study, which provides insight into the mechanism on how such small platinum content can allow for close-to-optimal adsorption energies for hydrogen. Funding Agencies|Vetenskapsraodet [2017-04862, 2017-04380]; Energimyndigheten [45419-1, 50779-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase alpha -W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a 110 oriented crystal texture are obtained as compared to the 111 orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from sigma =1.80-1.43GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress sigma =0.71GPa is obtained at U-s=200V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher U-s and having the lowest resistivity (14.2 mu Omega cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials. Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Japan Society for the Promotion of Science (JSPS)Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [17KK0136]

The growth of Cu thin films by low-energy ion-bombardment using bipolar and conventional HiPIMS pulse configurations to the target in combination with different biasing methods of the substrate were investigated. For bipolar HiPIMS with a substrate at floating potential, XRD measurements indicate minimal ion acceleration and change in the crystal growth when increasing the substrate holder potential to the same level as the applied positive voltage. In contrast, using bipolar HiPIMS with a substrate at ground potential results in a similar ion current profile as in conventional HiPIMS with a synchronized pulsed bias with the same delay and timing as the positive pulse. Furthermore, the trend in crystal growth is the same such that a significant increase in the (200) intensity is observed within an ion acceleration window, 125-175 V. Using conventional HiPIMS with a continuous DC bias also results in Cu films exhibiting significant (200) peaks, but the ion acceleration window is shifted to 175-225 V. The observed differences in the film growth could be explained not only by the energy of the ions but also by the type of ions (working gas vs metal ions) that are accelerated during either the positive pulse or substrate biasing. Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

The effect on the energy distributions of metal and gas ions in a bipolar high-power impulse magnetron sputtering (HiPIMS) discharge as the negative and positive pulse lengths are altered are reported. The results presented demonstrate that the selection of the pulse lengths in a HiPIMS discharge is important in optimizing the amount of accelerated ions. A short enough negative pulse is needed so that ions do not escape to the substrate before being accelerated by the positive pulse that follows the main negative HiPIMS pulse. The length of the positive pulse should also be long enough to accelerate the majority of the ions, but a too long positive pulse depletes the process chamber of electrons so much that it makes it difficult to initiate the next HiPIMS pulse. When pulse lengths of negative and positive pulses are properly selected, the fraction of ions, both metal and gas, accelerated by the positive pulse voltage is close to 100 %. Funding agencies: Swedish Research Council (Grant No. VR 2018-04139) and Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009-00971)

The plasma potential at a typical substrate position is studied during the positive pulse of a bipolar high-power impulse magnetron sputtering (bipolar HiPIMS) discharge with a Cu target. The goal of the study is to identify suitable conditions for achieving ion acceleration independent on substrate grounding. We find that the time-evolution of the plasma potential during the positive pulse can be separated into several distinct phases, which are highly dependent on the discharge conditions. This includes exploring the influence of the working gas pressure (0.3-2 Pa), HiPIMS peak current (10-70 A corresponding to 0.5-3.5 A cm(-2)), HiPIMS pulse length (5-60 mu s) and the amplitude of the positive voltage U (+) applied during the positive pulse (0-150 V). At low enough pressure, high enough HiPIMS peak current and long enough HiPIMS pulse length, the plasma potential at a typical substrate position is seen to be close to 0 V for a certain time interval (denoted phase B) during the positive pulse. At the same time, spatial mapping of the plasma potential inside the magnetic trap region revealed an elevated value of the plasma potential during phase B. These two plasma potential characteristics are identified as suitable for achieving ion acceleration in the target region. Moreover, by investigating the target current and ion saturation current at the chamber walls, we describe a simple theory linking the value of the plasma potential profile to the ratio of the available target electron current and ion saturation current at the wall. Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFOMat-LiU) [2009-00971]; Eurostars program (IonDrive) [E!114277]; Ministry of Education Youth and Sports of Czech RepublicMinistry of Education, Youth & Sports - Czech Republic [LM2018097]; Czech Science FoundationGrant Agency of the Czech Republic [GA19-00579S]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51805102, 52165021]

In the present study, we investigate the impact of pulse power (Ppulse) on the ion flux and the properties of TiN films using reactive high-power impulse magnetron sputtering. Ppulse was adjusted in the range of 5–25 kW, while keeping the total average power constant through regulating the pulsing frequency. It is found that the required N2 flow, to produce stoichiometric TiN, decreases as Ppulse is increased, which is due to a decrease in the deposition rate. The plasma conditions when stoichiometric TiN is formed were investigated in detail. In situ ion mass spectrometry measurements of the ion energy distribution functions reveal two distinct ion populations, ions originating from sputtered atoms (Ti+, Ti2+, and N+) and ions originating from the working gas (Ar+, Ar2+, and N2+). The average ion energies (Eave) of the sputtered ions show an increase with increasing Ppulse, while Eave for the gas ions remains almost unaffected. The relative flux intensity Ti2+/Ti+ showed an increasing trend, from 0.28 to 0.47, as Ppulse was increased from 5 to 25 kW. The ion flux changes affect the growth of the TiN film such that 111-textured films are grown for low Ppulse while higher Ppulse results in mixed orientations. In addition, the hardness of the deposited film increases with increasing Ppulse, while the compressive film stress increases significantly at a higher Ppulse. In this way, optimum deposition conditions were identified at Ppulse = 8.3 kW, where a relatively low compressive stress of 0.89 GPa and high hardness of 22.67 GPa were measured. Funding agencies: Swedish Research CouncilSwedish Research Council [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at the Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 °C. Two sample series with different oxygen partial pressures were studied. The films with the lowest resistivity of 3 × 10−4 Ω cm were deposited at the highest substrate temperature of 600 °C. The improvement of the electrical properties could be related to an improvement of the mobility due to the improved crystallinity. This improved crystallinity also increased the stability of the films towards ambient moisture. On the other hand, the detrimental influence of negative oxygen bombardment could be avoided, as the HiPIMS process can take place in the metal or transition mode even at relatively high oxygen partial pressures.

Tunable nanostructures that feature a high surface area are firmly attached to a conducting substrate and can be fabricated efficiently over significant areas, which are of interest for a wide variety of applications in, for instance, energy storage and catalysis. We present a novel approach to fabricate Fe nanoparticles using a pulsed-plasma process and their subsequent guidance and self-organization into well-defined nanostructures on a substrate of choice by the use of an external magnetic field. A systematic analysis and study of the growth procedure demonstrate that nondesired nanoparticle agglomeration in the plasma phase is hindered by electrostatic repulsion, that a polydisperse nanoparticle distribution is a consequence of the magnetic collection, and that the formation of highly networked nanotruss structures is a direct result of the polydisperse nanoparticle distribution. The nanoparticles in the nanotruss are strongly connected, and their outer surfaces are covered with a 2 nm layer of iron oxide. A 10 mu m thick nanotruss structure was grown on a lightweight, flexible and conducting carbon-paper substrate, which enabled the efficient production of H-2 gas from water splitting at a low overpotential of 210 mV and at a current density of 10 mA/cm(2).

Bipolar high-power impulse magnetron sputtering (HiPIMS) is used to achieve ion acceleration for ion bombardment of dielectric thin films. This is realized by increasing the plasma potential (Up), during the interval in-between the HiPIMS-pulses, using a positive reversed voltage (Urev). As long as the film surface potential (Us) is maintained low, close to ground potential, this increase in Up results in ion-acceleration as ions approach the film surface. The effect of Urev on the ion bombardment is demonstrated by the growth of dielectric (Al,Cr)2O3 films on two sets of substrates, Si (001) and sapphire (0001) utilizing a Urev ranging from 0 to 300 V. A clear ion bombardment effect is detected in films grown on the conductive Si substrate, while no, or a very small, effect is observed in films grown on the dielectric sapphire substrate. This is ascribed to the changes in Us when the substrate is subjected to the bombardment of positive ions. For a film surface that has a high capacitance to ground, Us remains close to ground potential for an extended time in-between the HiPIMS pulses, while if the capacitance is low, Us quickly attains floating potential (Ufloat) close to Up. The simulated temporal evolutions of Us for the films by using capacitors show that for a 1 μm thick (Al,Cr)2O3 film on a conductive substrate, Us is maintained close to ground potential during the entire 20 μs that Urev is applied after the HiPIMS pulse. On the other hand, when a capacitance corresponding to the 0.5 mm thick sapphire substrate is used, Us rapidly attains a potential close to Urev.

High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition technique, providing a high flux of metal ions to the substrate. However, one of the disadvantages for industrial use of this technique is a reduced deposition rate compared to direct current magnetron sputtering (dcMS) at equal average power. This is mainly due to a high target back-attraction probability of the metal ions with typical values in the range 70%–90% during the pulse. In order to reduce this effect, we focused on the contribution of ion fluxes available immediately after each HiPIMS pulse; a time also known as afterglow. Without a negative potential on the target at this stage of the HiPIMS process, the back-attracting electric field disappears allowing remaining ions to escape the magnetic trap and travel toward the substrate. To quantify the proposed mechanism, we studied the effect of HiPIMS pulse duration on the outward flux of film-forming species in titanium discharges, which are known to exhibit more than 50% reduction in deposition rate compared to dcMS. By shortening the HiPIMS pulse length, it was found that the contribution to the outward flux of film-forming species from the afterglow increases significantly. For example, HiPIMS discharges at a constant peak current density of about 1.10 A cm−2 showed a 45% increase of the deposition rate, by shortening the pulse duration from 200 to 50 μs. Ionized flux fraction measurements, using a gridless quartz crystal micro-balance-based ion meter, showed that this increase of the deposition rate could be achieved without compromising the ionized flux fraction, which remained approximately constant. The key to the achieved optimization of HiPIMS discharges lies in maintaining a high peak discharge current also for short pulse lengths to ensure sufficient ionization of the sputtered species.

The properties of Al-doped ZnO (AZO) films are known to degrade with exposure to humidity. Different AZO films deposited using reactive direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS) have been aged in ambient laboratory conditions and annealed at temperatures between 160 and 180 °C in a N2 atmosphere. Their electrical and optical properties, which have been investigated both ex situ and in situ during the annealing, are improved. The results of the in situ measurements are interpreted in terms of a diffusion process, where hydroxyl groups are decomposed and water is diffusing out of the films. As hydroxyl groups are known to act as a trap for charge carriers in ZnO, their removal from the film can explain the improvement of the electrical properties by the annealing.

Anisotropic heterogenous Ni/NiO nanoparticles with controlled compositions are grown using a high-power pulsed hollow cathode process. These novel particles can be tuned to consist of single-phase Ni via two-phase Ni/NiO to fully oxidized NiO, with a size range of 5-25 nm for individual crystals. A novelty of this approach is the ability to assemble multiple particles of Ni and NiO into a single complex structure, increasing the Ni-NiO interface density. This type of particle growth is not seen before and is explained to be due to the fact that the process operates in a single-step approach, where both Ni and O can arrive at the formed nanoparticle nuclei and aid in the continuous particle growth. The finished particle will then be a consequence of the initially formed crystal, as well as the arrival rate ratio of the two species. These particles hold great potential for applications in fields, such as electro- and photocatalysis, where the ability to control the level of oxidation and/or interface density is of great importance. Funding Agencies|Knut and Alice Wallenberg Foundation [KAW 2014.0276]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Tokyo Metropolitan University; Linkoping University

Gases, such as nitrogen dioxide, formaldehyde and benzene, are toxic even at very low concentrations. However, so far there are no low-cost sensors available with sufficiently low detection limits and desired response times, which are able to detect them in the ranges relevant for air quality control. In this work, we address both, detection of small gas amounts and fast response times, using epitaxially grown graphene decorated with iron oxide nanoparticles. This hybrid surface is used as a sensing layer to detect formaldehyde and benzene at concentrations of relevance (low parts per billion). The performance enhancement was additionally validated using density functional theory calculations to see the effect of decoration on binding energies between the gas molecules and the sensor surface. Moreover, the time constants can be drastically reduced using a derivative sensor signal readout, allowing the sensor to work at detection limits and sampling rates desired for air quality monitoring applications. Funding Agencies|Swedish Foundation for Strategic research (SSF) [GMT14-0077, RMA15-024]; Knut and Alice Wallenberg Foundation [KAW14.0276, 2012.0083]; Centre in Nano science and technology (CeNano) through the project "Graphene-nanoparticle hybrid gas sensor"; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Angpanneforeningens Forskningsstiftelse [16-541]; Hans Werthen Foundation grant

Magnetic nanoparticles with average size 30 nm were utilized to build three-dimensional framework structures—nanotrusses. In dual-phase Ni/NiO nanoparticles, there is a strong correlation between the amount of magnetic Ni and the final size and shape of the nanotruss. As it decreases, the length of the individual nanowires within the trusses also decreases, caused by a higher degree of branching of the wires. The position and orientation of the non-magnetic material within the truss structure was also investigated for the different phase compositions. For lower concentrations of NiO phase, the electrically conducting Ni-wire framework is maintained through the preferential bonding between the Ni crystals. For larger concentrations of NiO phase, the Ni-wire framework is interrupted by the NiO. The ability to use nanoparticles that are only partly oxidized in the growth of nanotruss structures is of great importance. It opens the possibility for using not only magnetic metals such as pure Ni, Fe, and Co, but also to use dual-phase nanoparticles that can strongly increase the efficiency of e.g. catalytic electrodes and fuel cells.

We present a gas-phase process for surface patterning and 3D self-assembly of nanoparticles (NPs) of functional materials such as metals, oxides, and nitrides. The method relies on electrostatic assembly of free-flying NPs with unipolar charge produced in plasma sources. We demonstrate the capability of the process in self-assembly of NPs, with the size in the range 10-60 nm, into arrays of free-standing 3D microstructures with complex morphologies. Considering that the plasma nanoparticle sources are compatible with synthesis of a large library of material NPs, the process introduces a novel approach for 3D printing of various functional NPs, high-precision device integration of NPs on sub-micrometer scales, and large-area parallel surface patterning of NPs. Funding Agencies|Linkoping University; Knut and AliceWallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 14.0276]; Swedish Government Strategic Research Area inMaterials Science on Functional Materials at Linkoping University [2009-00971]; AForsk Foundation [17-517]

The effect of applying a positive voltage pulse (Urev = 10 - 150 V) directly after the negative high power impulse magnetron sputtering (HiPIMS) pulse (bipolar HiPIMS) is investigated for the reactive sputter deposition of TiN thin films. Energy-resolved mass spectroscopy analyses are performed to gain insight in the effect on the ion energy distribution function of the various ions. It is demonstrated that the energy of a large fraction of the ions can be tuned by a reverse target potential and gain energy corresponding to the applied Urev. Microscopy observations and x-ray reflectometry reveal densification of the films which results in an increase in the film hardness from 23.9 to 34 GPa as well as an increase in compressive film stress from 2.1 GPa to 4.7 GPa when comparing conventional HiPIMS with bipolar HiPIMS (Urev = 150 V).

Here, an unidentified type of micropillar growth is described at room temperature during conventional direct-current magnetron sputtering (DC-MS) deposition from a Li4Ti5O12+graphite sputter target under negative substrate bias and high operating pressure. These fabricated carbon-Li2O-TiO2 microstructures consisting of various Li4Ti5O12/Li2TiO3/LixTiO2 crystalline phases are demonstrated as an anode material in Li-ion microbatteries. The described micropillar fabrication method is a low-cost, substrate independent, single-step, room-temperature vacuum process utilizing a mature industrial complementary metal-oxide-semiconductor (CMOS)-compatible technology. Furthermore, tentative consideration is given to the effects of selected deposition parameters and the growth process, as based on extensive physical and chemical characterization. Additional studies are, however, required to understand the exact processes and interactions that form the micropillars. If this facile method is further extended to other similar metal oxide-carbon systems, it could offer alternative low-cost fabrication routes for microporous high-surface area materials in electrochemistry and microelectronics. Funding Agencies|Academy of Finland CloseLoop project [13303452]

Two-dimensional materials offer a unique platform for sensing where extremely high sensitivity is a priority, since even minimal chemical interaction causes noticeable changes in electrical conductivity, which can be used for the sensor readout. However, the sensitivity has to be complemented with selectivity, and, for many applications, improved response- and recovery times are needed. This has been addressed, for example, by combining graphene (for sensitivity) with metal/oxides (for selectivity) nanoparticles (NP). On the other hand, functionalization or modification of the graphene often results in poor reproducibility. In this study, we investigate the gas sensing performance of epitaxial graphene on SiC (EG/SiC) decorated with nanostructured metallic layers as well as metal-oxide nanoparticles deposited using scalable thin-film deposition techniques, like hollow-cathode pulsed plasma sputtering. It is demonstrated that under the right modification conditions the electronic properties of the surface remain those of graphene, while the surface chemistry can be tuned to improve sensitivity, selectivity and speed of response to several gases relevant for air quality monitoring and control, such as nitrogen dioxide, benzene, and formaldehyde.

Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1-x, 0.017 amp;lt; x amp;lt; 0.085) in highly degenerate NCs using a nonequilibrium gas-phase growth process. Despite the significant reduction in the carrier mobility relative to intrinsic InN, the mobility in degenerate InN NCs (amp;gt;60 cm(2)/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III-V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications. Funding Agencies|Knut and Alice Wallenberg Foundation [KAW 14.0276]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (faculty Grant SFO-Mat-LiU) [2009-00971]; EPSRC [EP/M024938/1]

In this study, we investigated means of performance enhancement in sensors based on epitaxial graphene on silicon carbide (SiC). Epitaxially grown graphene on SiC substrates were successfully decorated with metal oxide nanoparticles such as TiO2 and Fe3O4 using hollow cathode pulsed plasma sputtering. Atomic Force Microscopy and Raman data verified that no damage was added to the graphene surface. It could be shown that it was easily possible to detect benzene, which is one of the most dangerous volatile organic compounds, with the Fe3O4 decorated graphene sensor down to an ultra-low concentration of 5 ppb with a signal to noise ratio of 35 dB. Moreover, upon illumination with a UV light LED (265 nm) of the TiO2 decorated graphene sensor, the sensitivity towards a change of oxygen could be enhanced such that a clear sensor response could be seen which is a significant improvement over dark conditions, where almost no response occurred. As the last enhancement, the time derivative sensor signal was introduced for the sensor data evaluation, testing the response towards a change of oxygen. This sensor signal evaluation approach can be used to decrease the response time of the sensor by at least one order of magnitude. (C) 2018 Elsevier Ltd. All rights reserved. Funding Agencies|Swedish Foundation for Strategic research (SSF) [GMT14-0077]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Centre in Nano science and technology (CeNano)

The nucleation and growth of pure titanium nanoparticles in a low-pressure sputter plasma has been believed to be essentially impossible. The addition of impurities, such as oxygen or water, facilitates this and allows the growth of nanoparticles. However, it seems that this route requires so high oxygen densities that metallic nanoparticles in the hexagonal aTi-phase cannot be synthesized. Here we present a model which explains results for the nucleation and growth of titanium nanoparticles in the absent of reactive impurities. In these experiments, a high partial pressure of helium gas was added which increased the cooling rate of the process gas in the region where nucleation occurred. This is important for two reasons. First, a reduced gas temperature enhances Ti2 dimer formation mainly because a lower gas temperature gives a higher gas density, which reduces the dilution of the Ti vapor through diffusion. The same effect can be achieved by increasing the gas pressure. Second, a reduced gas temperature has a "more than exponential" effect in lowering the rate of atom evaporation from the nanoparticles during their growth from a dimer to size where they are thermodynamically stable, r*. We show that this early stage evaporation is not possible to model as a thermodynamical equilibrium. Instead, the single-event nature of the evaporation process has to be considered. This leads, counter intuitively, to an evaporation probability from nanoparticles that is exactly zero below a critical nanoparticle temperature that is size-dependent. Together, the mechanisms described above explain two experimentally found limits for nucleation in an oxygen-free environment. First, there is a lower limit to the pressure for dimer formation. Second, there is an upper limit to the gas temperature above which evaporation makes the further growth to stable nuclei impossible., Comment: 32 pages, 7 figures

A constant supply of oxygen has been assumed to be necessary for the growth of titanium nanoparticles by sputtering. This oxygen supply can arise from a high background pressure in the vacuum system or from a purposely supplied gas. The supply of oxygen makes it difficult to grow metallic nanoparticles of titanium and can cause process problems by reacting with the target. We here report that growth of titanium nanoparticles in the metallic hexagonal titanium ({\alpha}Ti) phase is possible using a pulsed hollow cathode sputter plasma and adding a high partial pressure of helium to the process instead of trace amounts of oxygen. The helium cools the process gas in which the nanoparticles nucleate. This is important both for the first dimer formation and the continued growth to a thermodynamically stable size. The parameter region where the synthesis of nanoparticles is possible is mapped out experimentally and the theory of the physical processes behind this process window is outlined. A pressure limit below which no nanoparticles were produced was found at 200 Pa, and could be attributed to a low dimer formation rate, mainly caused by a more rapid dilution of the growth material. Nanoparticle production also disappeared at argon gas flows above 25 sccm. In this case the main reason was identified as a gas temperature increase within the nucleation zone, giving a too high evaporation rate from nanoparticles (clusters) in the stage of growth from dimers to stable nuclei. These two mechanisms are in depth explored in a companion paper [1]. A process stability limit was also found at low argon gas partial pressures, and could be attributed to a transition from a hollow cathode discharge to a glow discharge., Comment: 22 pages, 11 figures

In the present study we contribute to the understanding that is required for designing sputtering-based routes for high rate synthesis of hard and dense amorphous carbon (a-C) films. We compile and implement a strategy for synthesis of a-C thin films that entails coupling a hydrocarbon gas (acetylene) with high density discharges generated by the superposition of high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS). Appropriate control of discharge density (by tuning HiPIMS/DCMS power ratio), gas phase composition and energy of the ionized depositing species leads to a route capable of providing ten-fold increase in the deposition rate of a-C film growth compared to HiPIMS Ar discharge (Aijaz et al. Diamond and Related Materials 23 (2012) 1). This is achieved without significant incorporation of H (< 10 %) and with relatively high hardness (> 25 GPa) and mass density (~2.32 g/cm3). Using our experimental data together with Monte-Carlo computer simulations and data from the literature we suggest that: (i) dissociative reactions triggered by the interactions of energetic discharge electrons with hydrocarbon gas molecules is an important additional (to the sputtering cathode) source of film forming species and (ii) film microstructure and film hydrogen content are primarily controlled by interactions of energetic plasma species with surface and sub-surface layers of the growing film.

Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.

Titanium oxide nanoparticles have been synthesized via sputtering of a hollow cathode in an argon atmosphere. The influence of pressure and gas flow has been studied. Changing the pressure affects the nanoparticle size, increasing approximately proportional to the pressure squared. The influence of gas flow is dependent on the pressure. In the low pressure regime (107 amp;lt;= p amp;lt;= 143 Pa), the nanoparticle size decreases with increasing gas flow; however, at high pressure (p = 215 Pa), the trend is reversed. For low pressures and high gas flows, it was necessary to add oxygen for the particles to nucleate. There is also a morphological transition of the nanoparticle shape that is dependent on the pressure. Shapes such as faceted, cubic, and cauliflower can be obtained. Published by AIP Publishing. Funding Agencies|Knut and Alice Wallenberg foundation [KAW 2014.0276]; Swedish Research Council via the Linkoping Linneaus Environment LiLi-NFM [2008-6572]

Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low. (C) 2016 AIP Publishing LLC. Funding Agencies|COST Action "Highly Ionized Pulsed Plasmas" [MP0804]; Swedish Research Council VR [621-2014-4882]; Linkoping University via the "LiU Research Fellows" program.The previous status of this article was Manuscript and the working title was Atom insertion into grain boundaries generates compressive intrinsic stress in polycrystalline thin films.

Hydrogenated diamondlike carbon (DLC:H) thin films exhibit many interesting properties that can be tailored by controlling the composition and energy of the vapor fluxes used for their synthesis. This control can be facilitated by high electron density and/or high electron temperature plasmas that allow one to effectively tune the gas and surface chemistry during film growth, as well as the degree of ionization of the film forming species. The authors have recently demonstrated by adding Ne in an Ar-C high power impulse magnetron sputtering (HiPIMS) discharge that electron temperatures can be effectively increased to substantially ionize C species [Aijaz et al., Diamond Relat. Mater. 23, 1 (2012)]. The authors also developed an Ar-C2H2 HiPIMS process in which the high electron densities provided by the HiPIMS operation mode enhance gas phase dissociation reactions enabling control of the plasma and growth chemistry [Aijaz et al., Diamond Relat. Mater. 44, 117 (2014)]. Seeking to further enhance electron temperature and thereby promote electron impact induced interactions, control plasma chemical reaction pathways, and tune the resulting film properties, in this work, the authors synthesize DLC: H thin films by admixing Ne in a HiPIMS based Ar/C2H2 discharge. The authors investigate the plasma properties and discharge characteristics by measuring electron energy distributions as well as by studying discharge current characteristics showing an electron temperature enhancement in C2H2 based discharges and the role of ionic contribution to the film growth. These discharge conditions allow for the growth of thick (amp;gt;1 mu m) DLC: H thin films exhibiting low compressive stresses (similar to 0.5 GPa), high hardness (similar to 25 GPa), low H content (similar to 11%), and density in the order of 2.2 g/cm(3). The authors also show that film densification and change of mechanical properties are related to H removal by ion bombardment rather than subplantation. (C) 2016 American Vacuum Society. Funding Agencies|Swedish Research Council (VR) [621-2011-4280, 621-2014-4882]; MEra.Net (TANDEM); Linkoping University [Dnr-LiU-2015-01510]; Danish Council for Independent Research, Technology and Production Sciences

The growth of nanoparticles in plasma is modeled for situations where the growth is mainly due to the collection of ions of the growth material. The model is based on the classical orbit motion limited (OML) theory with the addition of a collision-enhanced collection (CEC) of ions. The limits for this type of model are assessed with respect to three processes that are not included: evaporation of the growth material, electron field emission, and thermionic emission of electrons. It is found that both evaporation and thermionic emission can be disregarded below a temperature that depends on the nanoparticle material and on the plasma parameters; for copper in our high-density plasma this limit is about 1200 K. Electron field emission can be disregarded above a critical nanoparticle radius, in our case around 1.4 nm. The model is benchmarked, with good agreement, to the growth of copper nanoparticles from a radius of 5 nm-20 nm in a pulsed power hollow cathode discharge. Ion collection by collisions contributes with approximately 10% of the total current to particle growth, in spite of the fact that the collision mean free path is four orders of magnitude longer than the nanoparticle radius. Funding Agencies|Knut and Alice Wallenberg foundation [2014.0276]; Swedish Research Council under Linkoping Linneaus Environment LiLi-NFM [2008-6572]; Ministry of Education and Science of the Russian Federation [14.Y26.31.0005]; Increase Competitiveness Program of MISiS

Aluminum doped zinc oxide (AZO) films have been deposited using reactive high power impulse magnetron sputtering (HiPIMS) and reactive direct current (DC) magnetron sputtering from an alloyed target without thermal assistance. These films have been compared in terms of their optical, electrical and structural properties. While both DC and HiPIMS deposited films show comparable transmittance, their electrical properties are significantly improved by the HiPIMS process. The HiPIMS deposited films show a low resistivity down to the order of 10(-4) Omega cm with a good homogeneity across the substrate, making them potential candidates for electrodes in solar cells. The density of electrons reached up to 11 x 10(20) cm(-3), making ionized impurities the main scattering defects. This improvement of the film properties can be related to the specific plasma/target interactions in a HiPIMS discharge. This allows the process to take place in the transition mode and to deposit highly conductive, transparent AZO films on large surfaces at low temperature. While the overall oxygen content is above that of stoichiometric ZnO, higher localization of oxygen is found at the interfaces between crystalline domains with substoichiometric composition. (C) 2016 Elsevier B.V. All rights reserved. Funding Agencies|European Commission within the DocMASE project

This paper reports a new strategy for nanoparticle surface assembly so that they form anisotropic fibril like features, consisting of particles directly attached to each other, which can extend 500 nm from the surface. The particles are both formed and deposited in a single step process enabled via the use of a pulsed plasma based technique. Using this approach, we have successfully modified zinc oxide rods, up to several hundred nanometers in diameter, with 25 nm diameter copper nanoparticles for catalytic applications. The resulting structure could be modelled using a diffusion limited aggregation based approach. This gives the material the appearance of marine coral, hence the term nanocoral. (C) 2016 Elsevier B.V. All rights reserved. Funding Agencies|Knut and Alice Wallenberg Foundation [KAW 2014.0276]; Swedish Research Council under Linkoping Linneaus Environment LiLi-NFM [2008-6572]

In the further development of reactive sputter deposition, strategies which allow for stabilization of the transition zone between the metallic and compound modes, elimination of the process hysteresis, and increase of the deposition rate, are of particular interest. In this study, the hysteresis behavior and the characteristics of the transition zone during reactive high power impulse magnetron sputtering (HiPIMS) of Al and Ce targets in an Ar-O(2) atmosphere as a function of the pulsing frequency and the pumping speed are investigated. Comparison with reactive direct current magnetron sputtering (DCMS) reveals that HiPIMS allows for elimination/suppression of the hysteresis and a smoother transition from the metallic to the compound sputtering mode. For the experimental conditions employed in the present study, optimum behavior with respect to the hysteresis width is obtained at frequency values between 2 and 4 kHz, while HiPIMS processes with values below or above this range resemble the DCMS behavior. Al-O films are deposited using both HiPIMS and DCMS. Analysis of the film properties shows that elimination/suppression of the hysteresis in HiPIMS facilitates the growth of stoichiometric and transparent Al(2)O(3) at relatively high deposition rates over a wider range of experimental conditions as compared to DCMS. Funding Agencies|Swedish Research Council (VR)|621-2008-3222|Strategic Research Center in Materials Science for Nanoscale Surface Engineering (MS2E)||Ministry of Science and Technology, Thailand||VR|623-2009-7348

High power impulse magnetron sputtering (HiPIMS) has proven to be capable of substantial improvement of the quality of deposited coatings. Lately, there have been a number of reports indicating that the hysteresis effect may be reduced in HiPIMS mode resulting in an increase of the deposition rate of stoichiometric compound as compared to a direct current magnetron sputtering process in oxide mode. In this contribution, we have studied the hysteresis behaviour of Ti metal targets sputtered in Ar + O(2) mixtures. For fixed pulse on time and a constant average power, there is an optimum frequency minimizing the hysteresis. The effect of gas dynamics was analyzed by measurements of the gas refill time and rarefaction. Results indicate that the gas rarefaction may be responsible for the observed hysteresis behaviour. The results are in agreement with a previous study of Al oxide reactive process.

High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile TiO2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiO x compounds, while in compound mode they are well-crystallized and present only O2− ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of ~1 A cm−2 and deposition temperatures lower than 300 °C. Rutile is favored at lower pressures ( 2 A cm−2), while amorphous films are obtained at higher pressures (5 Pa). Microstructural characterization of selected films is also presented.

Very high lateral ionic conductivities in epitaxial cubic yttria-stabilized zirconia (YSZ) synthesized on single-crystal SrTiO3and MgO substrates by reactive direct current magnetron sputtering are reported. Superionic conductivities (i.e., ionic conductivities of the order similar to 1 Omega(-1)cm(-1)) are observed at 500 degrees C for 58-nm-thick films on MgO. The results indicate a superposition of two parallel contributions - one due to bulk conductivity and one attributable to conduction along the film substrate interface. Interfacial effects dominate the conductivity at low temperatures (andlt;350 degrees C), showing more than three orders of magnitude enhancement compared to bulk YSZ. At higher temperatures, a more bulk-like conductivity is observed. The films have a negligible grain-boundary network, thus ruling out grain boundaries as a pathway for ionic conduction. The observed enhancement in lateral ionic conductivity is caused by a combination of misfit dislocation density and elastic strain in the interface. These very high ionic conductivities in the temperature range 150-500 degrees C are of great fundamental importance but may also be technologically relevant for low-temperature applications. Original Publication:Michael Sillassen, Per Eklund, Nini Pryds, Erik Johnson, Ulf Helmersson and Jorgen Bottiger, Low-Temperature Superionic Conductivity in Strained Yttria-Stabilized Zirconia, 2010, ADVANCED FUNCTIONAL MATERIALS, (20), 13, 2071-2076.http://dx.doi.org/10.1002/adfm.201000071Copyright: John Wiley & Sons, Ltdhttp://eu.wiley.com/WileyCDA/Brand/id-35.html

Physical vapor deposition coatings for cutting tools may be deposited by, e.g. reactive magnetron sputtering. Alumina growth in Ar/O2 gas mixtures gives rise to problems due to insulating layers on targets, and hysteresis effects with respect to oxygen gas flow. In this paper is described a technology for the deposition of crystalline alumina: reactive high power impulse magnetron sputtering. Pure Al was used as target material, and the cemented carbide (WC/Co) substrates were kept at 500-650 ºC. Hysteresis effects with respect to oxygen gas flow were alleviated, which enabled stable growth at a high deposition rate. The high power impulses were helpful in obtaining a crystalline oxide coating. X-ray diffraction and crosssection transmission electron microscopy showed that α-alumina films were formed. Technological testing of these PVD alumina coatings, with state-of-the-art AlTiN as benchmark, showed significantly improved crater wear resistance in steel turning. On the day of defence date the status of article VII was: Accepted.Original Publication:T.I. Selinder, E. Coronel, Erik Wallin and Ulf Helmersson, α-alumina coatings on WC/Co substrates by physical vapor deposition, 2009, International journal of refractory metals & hard materials, (27), 2, 507-512.http://dx.doi.org/10.1016/j.ijrmhm.2008.10.007Copyright: Elsevier Science B.V., Amsterdam.http://www.elsevier.com/

High power impulse magnetron sputtering (HIPIMS) of an Al target in Ar/O2 mixtures has been studied. The use of HIPIMS is shown to drastically influence the process characteristics compared to conventional sputtering. Under suitable conditions, oxide formation on the target as the reactive gas flow is increased is suppressed, and the hysteresis effect commonly observed as the gas flow is varied during conventional sputtering can be reduced, or even completely eliminated, using HIPIMS. Consequently, stoichiometric alumina can be deposited under stable process conditions at high rates. Possible explanations for this behavior as well as a model qualitatively describing the process are presented. Original publication: E. Wallin and U. Helmersson, Hysteresis-free reactive high power impulse magnetron sputtering, 2008, Thin Solid Films, (516), 18, 6398-6401.http://dx.doi.org/10.1016/j.tsf.2007.08.123. Copyright: Elsevier B.V., http://www.elsevier.com/

Ti-O nanoparticles have been synthesized via hollow cathode sputtering in an Ar-O2 atmosphere using high power pulsing. It is shown that the stoichiometry and the size of the nanoparticles can be varied independently, the former through controlling the O2 gas flow and the latter by the independent biasing of two separate anodes in the growth zone. Nanoparticles with diameters in the range of 25 to 75 nm, and with different Ti-O compositions and crystalline phases, have been synthesized., 15 pages, 6 figures

Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se-2 (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al2O3 layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm(2); as compared to equivalent CIGS solar cells with a standard back contact. (C) 2014 The Authors. Published by Elsevier B.V. This work is funded by the European Commission via FP7 MarieCurie IEF 2011 Action No. 300998, the Knut and Alice Wallenberg Foun-dation through Grant No. 2012.0083 and the Swedish Research Councilunder Grant No. 2008-6572 via the Linköping Linnaeus EnvironmentLiLi-NFM. Lastly, F.H.would like to thankthe European and Wallonia Re-gion FEDER Grant ECP12020011678F (MINATIS project) for thefinan-cial support

We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage. Original publication: J. Alami, P. Eklund, J. Emmerlich, O. Wilhelmsson, U. Jansson, H. Högberg, L. Hultman, & U. Helmersson, High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target, 2006, Thin Solid Films, (515), 4, 1731-1736. http://dx.doi.org/10.1016/j.tsf.2006.06.015. Copyright: Elsevier B.V., http://www.elsevier.com/.