Search

Your search keyword '"Tsubuku, Masashi"' showing total 33 results
Start Over Author "Tsubuku, Masashi"
33 results on '"Tsubuku, Masashi"'

2. P‐251: Late‐News Poster: OLED Lifetime Optimization in Lower Current‐Density Region.

Author

Naganuma, Tomohiko, Aoki, Hayata, Murata, Ryosuke, Sakamoto, Michiaki, Ushikubo, Takahiro, Tsubuku, Masashi, and Kimura, Hiroyuki

Subjects
POSTERS, ELECTRONS
Abstract

The Organic Light Emitting Diode (OLED) lifetime property was investigated in the lower current‐density region. The OLED display is required for an equivalent long lifetime performance in higher and lower current‐density regions. It was clarified that hole accumulation at the interface between electron blocking layer (EBL) and emissive layer (EML) is important for the Blue OLED lifetime property at lower current densities. The device simulation showed that the appropriate EML hole barrier affects the carrier distribution. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

4. P‐251: Late‐News Poster:OLED Lifetime Optimization in Lower Current‐Density Region

Author

Naganuma, Tomohiko, Aoki, Hayata, Murata, Ryosuke, Sakamoto, Michiaki, Ushikubo, Takahiro, Tsubuku, Masashi, and Kimura, Hiroyuki

Abstract

The Organic Light Emitting Diode (OLED) lifetime property was investigated in the lower current‐density region. The OLED display is required for an equivalent long lifetime performance in higher and lower current‐density regions. It was clarified that hole accumulation at the interface between electron blocking layer (EBL) and emissive layer (EML) is important for the Blue OLED lifetime property at lower current densities. The device simulation showed that the appropriate EML hole barrier affects the carrier distribution.

Published
2024
Full Text
View/download PDF

5. 8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm2/Vs and High Level of Uniformity on the Large Size Substrates.

Author

Tsubuku, Masashi, Watakabe, Hajime, Sasaki, Toshinari, Tamaru, Takaya, Onodera, Ryo, Mochizuki, Marina, Kimura, Hiroyuki, Kawashima, Emi, Sasaki, Daichi, and Tsuruma, Yuki

Subjects
UNIFORMITY, OXIDES, INDIUM gallium zinc oxide, SEMICONDUCTORS, GLASS, DENTAL cements
Abstract

We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

6. 8‐1: Invited Paper:High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm2/Vs and High Level of Uniformity on the Large Size Substrates

Author

Tsubuku, Masashi, Watakabe, Hajime, Sasaki, Toshinari, Tamaru, Takaya, Onodera, Ryo, Mochizuki, Marina, Kimura, Hiroyuki, Kawashima, Emi, Sasaki, Daichi, and Tsuruma, Yuki

Abstract

We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs.

Published
2023
Full Text
View/download PDF

7. 76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels

Author

Shima, Yukinori, primary, Jincho, Masami, additional, Hamochi, Takashi, additional, Saito, Satoru, additional, Dobashi, Masayoshi, additional, Okazaki, Kenichi, additional, Koezuka, Junichi, additional, Matsuda, Shinpei, additional, Tsubuku, Masashi, additional, and Yamazaki, Shunpei, additional

Published
2016
Full Text
View/download PDF

8. P-26: A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET

Author

Shiokawa, Masataka, primary, Toyotaka, Kouhei, additional, Tsubuku, Masashi, additional, Sugimoto, Kazuya, additional, Nakashima, Motoki, additional, Matsuda, Shinpei, additional, Shishido, Hideaki, additional, Aoyama, Tomoya, additional, Ikeda, Hisao, additional, Eguchi, Shingo, additional, Yamazaki, Shunpei, additional, Nakada, Masataka, additional, Sato, Takahiro, additional, Abe, Takayuki, additional, and Koezuka, Junichi, additional

Published
2016
Full Text
View/download PDF

12. Single crystalline In–Ga–Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics

Author

Yamada, Yoshinori, primary, Matsubayashi, Daisuke, additional, Matsuda, Shinpei, additional, Sato, Yuhei, additional, Ota, Masashi, additional, Ito, Daigo, additional, Tsubuku, Masashi, additional, Takahashi, Masahiro, additional, Hirohashi, Takuya, additional, Sakakura, Masayuki, additional, and Yamazaki, Shunpei, additional

Published
2014
Full Text
View/download PDF

13. Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Author

Yamazaki, Shunpei, primary, Hirohashi, Takuya, additional, Takahashi, Masahiro, additional, Adachi, Shunsuke, additional, Tsubuku, Masashi, additional, Koezuka, Junichi, additional, Okazaki, Kenichi, additional, Kanzaki, Yohsuke, additional, Matsukizono, Hiroshi, additional, Kaneko, Seiji, additional, Mori, Shigeyasu, additional, and Matsuo, Takuya, additional

Published
2014
Full Text
View/download PDF

14. 52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide

Author

Koezuka, Junichi, primary, Okazaki, Kenichi, additional, Hirohashi, Takuya, additional, Takahashi, Masahiro, additional, Adachi, Shunsuke, additional, Tsubuku, Masashi, additional, Yamazaki, Shunpei, additional, Kanzaki, Yohsuke, additional, Matsukizono, Hiroshi, additional, Kaneko, Seiji, additional, Mori, Shigeyasu, additional, and Matsuo, Takuya, additional

Published
2013
Full Text
View/download PDF

15. 56.1: Development of IGZO‐TFT and Creation of New Devices Using IGZO‐TFT

Author

Kataoka, Yoshiharu, primary, Imai, Hajime, additional, Nakata, Yukinobu, additional, Daitoh, Tohru, additional, Kimura, Takuya Matsuo Naofumi, additional, Nakano, Taketoshi, additional, Mizuno, Yukio, additional, Oketani, Taimi, additional, Takahashi, Masahiro, additional, Tsubuku, Masashi, additional, Miyake, Hiroyuki, additional, Hirakata, Tetsuji Ishitani Yoshiharu, additional, Koyama, Jun, additional, Yamazaki, Shunpei, additional, Koezuka, Junichi, additional, and Okazaki, Kenichi, additional

Published
2013
Full Text
View/download PDF

16. P.10: WITHDRAWN: P.11: Recognition of Existence of n-type IGZO Layer in CAAC-IGZO Film under Source and Drain Electrode Made of Tungsten

Author

Tokumaru, Ryo, primary, Tsubuku, Masashi, additional, Yamane, Yasumasa, additional, Inoue, Takayuki, additional, Tanaka, Tetsuhiro, additional, Matsubayashi, Daisuke, additional, Suzawa, Hideomi, additional, Yamazaki, Shunpei, additional, Nakazawa, Yasutaka, additional, Jintyou, Masami, additional, Matsukizono, Hiroshi, additional, Oda, Akihiro, additional, Mori, Shigeyasu, additional, and Matsuo, Takuya, additional

Published
2013
Full Text
View/download PDF

17. 16.1: Negative‐Bias Photodegradation Mechanism in InGaZnO TFT

Author

Tsubuku, Masashi, primary, Watanabe, Ryosuke, additional, Ishihara, Noritaka, additional, Kishida, Hideyuki, additional, Takahashi, Masahiro, additional, Yamazaki, Shunpei, additional, Kanzaki, Yohsuke, additional, Matsukizono, Hiroshi, additional, Mori, Shigeyasu, additional, and Matsuo, Takuya, additional

Published
2013
Full Text
View/download PDF

18. A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET.

Author

Shiokawa, Masataka, Toyotaka, Kouhei, Tsubuku, Masashi, Sugimoto, Kazuya, Nakashima, Motoki, Matsuda, Shinpei, Shishido, Hideaki, Aoyama, Tomoya, Ikeda, Hisao, Eguchi, Shingo, Yamazaki, Shunpei, Nakada, Masataka, Sato, Takahiro, Abe, Takayuki, and Koezuka, Junichi

Subjects
ORGANIC light emitting diode manufacturing, FIELD-effect transistors
Abstract

A prototype of an 8.34 inch, 1058 ppi 8K4K display is fabricated. This display shall use top-gate self-aligned-type crystalline oxide semiconductor field-effect transistors as the backplane, and will be the smallest 8K display in the world. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

19. Development of a Top-Gate Transistor with Short Channel Length and C Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels.

Author

Shima, Yukinori, Jincho, Masami, Hamochi, Takashi, Saito, Satoru, Dobashi, Masayoshi, Okazaki, Kenichi, Koezuka, Junichi, Matsuda, Shinpei, Tsubuku, Masashi, and Yamazaki, Shunpei

Subjects
FIELD-effect transistor manufacturing, LOGIC circuits, INDIUM gallium zinc oxide
Abstract

We have fabricated top-gate field-effect transistors (FETs) based on an oxide semiconductor for high-performance driving capability. The optimization of the plasma treatment enabled a 50-nm-thick gate insulating film and a short channel length of these FETs, enabling a high FET performance. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

20. A New Concept of In-Ga-Zn Oxide Composition for Fabricating High Mobility and Stability FETs.

Author

Ishihara, Noritaka, Tsutsui, Kazuhiro, Takasu, Takako, Tsubuku, Masashi, Yamazaki, Shunpei, Higano, Satoshi, Daisuke, Kurosaki, and Shimomura, Akihisa

Subjects
INDIUM gallium zinc oxide, MICROFABRICATION, FIELD-effect transistors
Abstract

We used new In-Ga-Zn oxide composition (In:Ga:Zn = from 4:2:3 to 4:2:4.1) to fabricate bottom-gate, top-contact field-effect transistors with high mobility and stability. Here we discuss these improvements in mobility and stability based on experiments and calculations. We succeeded in fabricating a 513-ppi in-cell-type touch panel using this In-Ga-Zn oxide. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

21. 76.1: High Aperture Ratio LCD Display using In‐Ga‐Zn‐Oxide TFTs without Storage Capacitor

Author

Shishido, Hideaki, primary, Toyotaka, Kouhei, additional, Tsubuku, Masashi, additional, Noda, Kousei, additional, Ohara, Hiroki, additional, Nishi, Takeshi, additional, Moriya, Koji, additional, Godo, Hiromichi, additional, Koyama, Jun, additional, Yamazaki, Shunpei, additional, Oikawa, Yoshiaki, additional, Handa, Takuya, additional, and Sakakura, Masayuki, additional

Published
2010
Full Text
View/download PDF

26. Crystallography of In-Ga-Zn-O thin film having CAAC structure.

Author

Ohgarane, Daisuke, Konishi, Michiko, Dairiki, Koji, Oota, Masashi, Hirohashi, Takuya, Takahashi, Masahiro, Tsubuku, Masashi, Yamazaki, Shunpei, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Mori, Shigeyasu, and Matsuo, Takuya

Published
2013

30. Composition ratio in In-Ga-Zn-Oxide FET and photoirradiation stability.

Author

Hayakawa, Masahiko, Inoue, Kouki, Tsubuku, Masashi, Ohta, Masashi, Akimoto, Kengo, Takahashi, Masahiro, Honda, Tatsuya, Kato, Kiyoshi, and Yamazaki, Shunpei

Abstract

An examination is made of the effect of the In-Ga-Zn-Oxide (IGZO) composition ratio on electric characteristics and reliability of IGZO FETs and confirmed that a higher content of In and a lower content of Ga in the IGZO enable better initial electric characteristics. However, an FET with a higher content of In in the IGZO, which is subjected to photoirradiation of a channel portion, shows an Id-Vg curve having a longer tail extending in the negative direction. Furthermore, an FET with a higher content of In in the IGZO, to which negative gate bias temperature stress is applied under photoirradiation, has a greater change in characteristics. Placing importance on stability, we propose employing an In:Ga:Zn ratio of 1:1:1 for display devices which may possibly be subjected to photoirradiation. [ABSTRACT FROM PUBLISHER]

Published
2012

31. Optical properties and evaluation of localized level in gap of In-Ga-Zn-O thin film.

Author

Ishihara, Noritaka, Tsubuku, Masashi, Nonaka, Yusuke, Watanabe, Ryosuke, Inoue, Kouki, Shishido, Hideaki, Kato, Kiyoshi, and Yamazaki, Shunpei

Abstract

Recent studies have shown that an indium gallium zinc oxide (In-Ga-Zn-O: IGZO) thin film is affected by light irradiation in a variety of ways. Such photoresponse properties are considered to result from deep defect levels in the band gap of IGZO, and the defect levels need to be reduced in order to improve the reliability of IGZO. The deep defect levels were measured by low-temperature photoluminescence (low-temperature PL) and a constant photocurrent method (CPM), and the density of states was determined by CPM. As a result, the density of states of the manufactured IGZO film is sufficiently reduced. In addition, an IGZO-FET manufactured through a similar process has sufficient stability against light. [ABSTRACT FROM PUBLISHER]

Published
2012

32. Analysis for Extremely Low Off-State Current in CAAC-IGZO FETs

Author

Tsubuku, Masashi, Matsubayashi, Daisuke, Takeuchi, Toshihiko, Honda, Ryunosuke, Murakawa, Tsutomu, Matsuda, Shinpei, Yamamoto, Yoshitaka, and Yamazaki, Shunpei

Abstract

A field effect transistor (FET) using c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) for an active layer has an extremely low off-state current, which is much lower than an off-state current of a silicon FET. As we measured and analyzed the off-state current, the voltage drop caused by the off-state current in a memory device was found to approach to a stretched exponential function. This is because in the off-state CAAC-IGZO FET, a small number of carriers move discretely and current does not flow uniformly. The low off-state current was also maintained even when its channel length was scaled down to approximately 50 nm.

Published
2015

33. Morphological and Electrical Difference in C-axis Aligned Crystalline IGZO Films Based on the Sputtering Method.

Author

Kawata, Takuya, Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Takasu, Takako, Kurosawa, Yoichi, Dairiki, Koji, Tsubuku, Masashi, and Yamazaki, Shunpei

Subjects
INDIUM gallium zinc oxide, ELECTRIC properties of metals, OXIDE coating
Abstract

We investigated In-Ga-Zn oxide films deposited by two types of sputtering methods: planar magnetron and facing-target. In crystallinity, we found that silicon diffused from SiOx prevents crystallization regardless of the sputtering method. In electrical property, we found that mobility of films deposited by facing-target sputtering less depends on carrier concentration. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results