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12. Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

13. A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates

21. The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films.

22. Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity.

23. The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited W[N.sub.x][C.sub.y] films

24. Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment

25. Materials characterization of WNxCy, WNx and WCx films for advanced barriers

26. The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films

27. Study of thermal stability of nickel silicide by X-ray reflectivity

30. Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers

31. Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance

33. Impact of thinning and through silicon via proximity on High-k / Metal Gate first CMOS performance

34. Temperature dependent electrical characteristics of through-si-via (TSV) interconnections

35. Variation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100nm Cu damascene integration route

36. 3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding

38. 3D Stacked IC demonstrator using Hybrid Collective Die-to-Wafer bonding with copper Through Silicon Vias (TSV)

40. Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials

41. Calculation of C 1s core-level shifts in poly(ethylene terephthalate) and comparison with x-ray photoelectron spectroscopy

42. Preface

43. Materials characterization of WNxCy, WNx and WCx films for advanced barriers

45. The critical role of the metal / porous low-k interface in post direct CMP defectivity generation and resulting ULK surface and bulk hydrophilisation