271 results on '"Trankle, G."'
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2. AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low R_{\scriptscriptstyle {\rm ON}} \times A
3. AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs)
4. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers
5. Increased Conversion Efficiency at 800 W Continuous Wave Output From Single 1-cm Diode Laser Bars at 940 nm
6. Proton and heavy ion irradiation effects on AlGaN/GaN HFET devices
7. Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes
8. Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET's for high-speed and millimeter-wave applications
9. Monolithic Master Oscillator with Tapered Power Amplifier Diode Laser at 1060 nm with Additional Control Section for High Power Operation
10. Wavelength Stabilized 905 nm Diode Lasers in the 100 W Class for Automotive LiDAR
11. Widely Tunable Watt-Level MOPA Systems Emitting at 976 nm
12. Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs
13. High Pulse Power Wavelength Stabilized Laser Diodes for Automotive LiDAR
14. Terahertz Time-Domain Spectroscopy by Asynchronous Sampling with Modelocked Semiconductor Lasers
15. Selective lateral dry etching of GaAs in AlGaAs/GaAs heterostructures with CCl2F2/He
16. Monolithically wavelength-stabilized high power diode lasers
17. Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence
18. Limitations to brightness in high power laser diodes
19. Joule-class 940 nm diode laser bars for millisecond pulse applications
20. The Influence of differential modal gain on the filamentary behavior of broad area diode lasers
21. High power picosecond and nanosecond diode laser sources in the wavelength range 650 nm to 1100 nm
22. 25-W Monolithic Spectrally Stabilized 975-nm Minibars for Dense Spectral Beam Combining
23. Experimental Investigation of Limits to Slow Axis Beam Quality in High Power Broad Area Diode Lasers
24. Studies of limitations to lateral brightness in high power diode lasers using spectrally-resolved mode profiles
25. Terahertz edge detection with antenna-coupled field-effect transistors in 0.25 μm AlGaN/GaN technology
26. Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs- nanostructures
27. Aging behavior of AlGaA/GaN HFETs with advanced ohmic and Schottky contacts
28. Technology and thermal stability of ALGAN/GAN HFETs
29. High-brilliance diode lasers with monolithically-integrated surface gratings as sources for spectral beam combining
30. Advances in high power semiconductor lasers
31. Scalable, monolythically-integrated detectors for THz imaging
32. Monolithic Y-branch dual wavelength DBR diode laser at 671 nm for shifted excitation Raman difference spectroscopy
33. Narrow linewidth, micro-integrated extended cavity diode laser for precision potassium atom interferometry in micro-gravity environment
34. 1064 nm wavelength stabilized hybrid ns-MOPA diode laser system for high peak power and low spectral width
35. Mode-locked semiconductor laser with controllable intracavity dispersion and absorption
36. Multifinger InP HBT's in transferred-substrate technology for 100 GHz power amplifiers
37. Prediction of Single-Mode Fiber Coupling Efficiencies of a Tapered Diode Laser From Measured Wigner Distribution Functions
38. Modular assembly of diode lasers in a compact and reliable setup for a wide range of applications
39. Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
40. 56W optical output power at 970nm from a truncated tapered semiconductor optical amplifier
41. Narrow-linewidth high-power semiconductor-based laser module
42. Micro-integrated ECDLs for precision spectroscopy in space
43. Hybrid-integrated ECDL for precision Rubidium spectroscopy in space
44. Thermal optimisation of GaN flip chip power transistors
45. Micro bench for optical pulse picking from 4 GHz pulse trains generated by mode locking of DBR lasers
46. AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
47. A new concept of an ultra fast pulse picker for fs- and ps-pulses from GHz pulse-trains with semiconductor tapered elements
48. 12.2 W output power from 1060 nm DBR tapered lasers with narrow spectral line width and nearly diffraction limited beam quality
49. High-power distributed feedback diode laser at 780 nm with sub-100 kHz linewidth
50. A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation
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