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Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET's for high-speed and millimeter-wave applications
- Source :
- IEEE Transactions on Electron Devices. Jan, 1998, Vol. 45 Issue 1, p21, 10 p.
- Publication Year :
- 1998
-
Abstract
- An InP-based double-sided-doped modulation doped field effect transistor with InAs-layer-inserted channels has been created using a saturation velocity of 3.1 times ten (super 7) centimeters per second. The semiconductor device design achieves a fT of 265 gigahertz for 0.13-micrometer T-gates. Less Coulomb scattering occurs in the device's donor layers. Good radio-frequency performance is achieved.
Details
- ISSN :
- 00189383
- Volume :
- 45
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.20455001