Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET's for high-speed and millimeter-wave applications

MLA

Xu, Dong, et al. “Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High-Speed and Millimeter-Wave Applications.” IEEE Transactions on Electron Devices, vol. 45, no. 1, Jan. 1998, p. 21. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20455001&authtype=sso&custid=ns315887.

APA

Xu, D., Heib, H. G., Kraus, S. A., Sexl, M., Bohm, G., Trankle, G., Weimann, G., & Abstreiter, G. (1998). Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET’s for high-speed and millimeter-wave applications. IEEE Transactions on Electron Devices, 45(1), 21.

Chicago

Xu, Dong, Heiner G. Heib, Stefan A. Kraus, M. Sexl, G. Bohm, G. Trankle, G. Weimann, and G. Abstreiter. 1998. “Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High-Speed and Millimeter-Wave Applications.” IEEE Transactions on Electron Devices 45 (1): 21. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.20455001&authtype=sso&custid=ns315887.