Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers

Authors :: Xiaozhuo Wang
Crump, P.
Wenzel, H.
Liero, A.
Hoffmann, T.
Pietrzak, A.
Schultz, C.M.
Klehr, A.
Ginolas, A.
Einfeldt, S.
Bugge, F.
Erbert, G.
Trankle, G.
Source :: IEEE Journal of Quantum Electronics. May-June, 2010, Vol. 46 Issue 5-6, p658, 8 p.
Publication Year :: 2010

Subjects :: Finite element method -- Usage
Optical pumping -- Analysis
Semiconductor lasers -- Design and construction
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